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Lichtempfindliche Zusammensetzung und Verfahren zur Strukturformung damit

Info

Publication number
DE602006012749D1
DE602006012749D1 DE200660012749 DE602006012749T DE602006012749D1 DE 602006012749 D1 DE602006012749 D1 DE 602006012749D1 DE 200660012749 DE200660012749 DE 200660012749 DE 602006012749 T DE602006012749 T DE 602006012749T DE 602006012749 D1 DE602006012749 D1 DE 602006012749D1
Authority
DE
Grant status
Grant
Patent type
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE200660012749
Other languages
English (en)
Inventor
Kazuyoshi Mizutani
Yasutomo Kawanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FUJIFILM Corp
Original Assignee
FUJIFILM Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties the alicyclic moiety being in a side chain
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/122Sulfur compound containing
    • Y10S430/123Sulfur in heterocyclic ring
DE200660012749 2005-03-16 2006-03-15 Lichtempfindliche Zusammensetzung und Verfahren zur Strukturformung damit Active DE602006012749D1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005075494A JP4505357B2 (ja) 2005-03-16 2005-03-16 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法

Publications (1)

Publication Number Publication Date
DE602006012749D1 true DE602006012749D1 (de) 2010-04-22

Family

ID=36645599

Family Applications (1)

Application Number Title Priority Date Filing Date
DE200660012749 Active DE602006012749D1 (de) 2005-03-16 2006-03-15 Lichtempfindliche Zusammensetzung und Verfahren zur Strukturformung damit

Country Status (4)

Country Link
US (1) US7807329B2 (de)
JP (1) JP4505357B2 (de)
DE (1) DE602006012749D1 (de)
EP (1) EP1703326B1 (de)

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JP4524234B2 (ja) * 2005-09-26 2010-08-11 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
KR20080026066A (ko) * 2006-09-19 2008-03-24 후지필름 가부시키가이샤 감광성 조성물, 감광성 조성물에 사용하는 화합물 및감광성 조성물을 사용한 패턴형성방법
JP5140354B2 (ja) * 2006-09-19 2013-02-06 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
EP1906241A1 (de) 2006-09-29 2008-04-02 FUJIFILM Corporation Resistzusammensetzung und Verfahren zur Strukturformung damit
EP1918778B1 (de) * 2006-10-30 2016-08-03 Rohm and Haas Electronic Materials LLC Zusammensetzungen und Verfahren für Immersionslithografie
JP4554665B2 (ja) 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
US8530148B2 (en) 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8637229B2 (en) 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP5096796B2 (ja) * 2007-03-05 2012-12-12 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
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US8034547B2 (en) 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
JP4982288B2 (ja) * 2007-04-13 2012-07-25 富士フイルム株式会社 パターン形成方法
JP4866790B2 (ja) * 2007-05-23 2012-02-01 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP2009053665A (ja) * 2007-08-02 2009-03-12 Fujifilm Corp 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP5459998B2 (ja) * 2007-09-14 2014-04-02 富士フイルム株式会社 ポジ型感光性組成物、該ポジ型感光性組成物を用いたパターン形成方法、及び、該ポジ型感光性組成物に用いられる樹脂
JP5276821B2 (ja) * 2007-10-01 2013-08-28 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
US20090098490A1 (en) * 2007-10-16 2009-04-16 Victor Pham Radiation-Sensitive, Wet Developable Bottom Antireflective Coating Compositions and Their Applications in Semiconductor Manufacturing
JP5358112B2 (ja) * 2008-03-28 2013-12-04 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP5364436B2 (ja) * 2008-05-08 2013-12-11 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、新規な化合物、および酸発生剤
JP5238354B2 (ja) * 2008-05-21 2013-07-17 東京応化工業株式会社 レジストパターン形成方法
JP5481046B2 (ja) * 2008-08-13 2014-04-23 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、新規な化合物および酸発生剤
JP5387181B2 (ja) * 2009-07-08 2014-01-15 信越化学工業株式会社 スルホニウム塩、レジスト材料及びパターン形成方法
JPWO2012014576A1 (ja) * 2010-07-30 2013-09-12 Jsr株式会社 ネガ型感放射線性樹脂組成物
KR101229312B1 (ko) 2011-01-03 2013-02-04 금호석유화학 주식회사 술포늄 화합물, 광산발생제 및 이의 제조방법
JP5035466B1 (ja) * 2011-02-04 2012-09-26 Jsr株式会社 レジストパターン形成用感放射線性樹脂組成物
US8932796B2 (en) 2011-11-10 2015-01-13 International Business Machines Corporation Hybrid photoresist composition and pattern forming method using thereof
JP5846889B2 (ja) * 2011-12-14 2016-01-20 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物

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Also Published As

Publication number Publication date Type
EP1703326A3 (de) 2007-11-07 application
EP1703326B1 (de) 2010-03-10 grant
JP4505357B2 (ja) 2010-07-21 grant
US7807329B2 (en) 2010-10-05 grant
EP1703326A2 (de) 2006-09-20 application
US20060210919A1 (en) 2006-09-21 application
JP2006259136A (ja) 2006-09-28 application

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