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Sequentielle lithographische verfahren zur reduktion von stapelfehler-nukleierungsstellen und strukturen mit verringerten stapelfehler-nukleierungsstellen

Info

Publication number
DE602005020911D1
DE602005020911D1 DE200560020911 DE602005020911T DE602005020911D1 DE 602005020911 D1 DE602005020911 D1 DE 602005020911D1 DE 200560020911 DE200560020911 DE 200560020911 DE 602005020911 T DE602005020911 T DE 602005020911T DE 602005020911 D1 DE602005020911 D1 DE 602005020911D1
Authority
DE
Grant status
Grant
Patent type
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE200560020911
Other languages
English (en)
Inventor
Christer Hallin
Heinz Lendenmann
Joseph John Sumakeris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cree Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02378Silicon carbide
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/02428Structure
    • H01L21/0243Surface structure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/02433Crystal orientation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02529Silicon carbide
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02636Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639Preparation of substrate for selective deposition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/931Silicon carbide semiconductor
DE200560020911 2004-03-18 2005-02-14 Sequentielle lithographische verfahren zur reduktion von stapelfehler-nukleierungsstellen und strukturen mit verringerten stapelfehler-nukleierungsstellen Active DE602005020911D1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US55412304 true 2004-03-18 2004-03-18
US10929911 US7109521B2 (en) 2004-03-18 2004-08-30 Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
PCT/US2005/004480 WO2005095679A3 (en) 2004-03-18 2005-02-14 Sequential lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites

Publications (1)

Publication Number Publication Date
DE602005020911D1 true DE602005020911D1 (de) 2010-06-10

Family

ID=34972528

Family Applications (1)

Application Number Title Priority Date Filing Date
DE200560020911 Active DE602005020911D1 (de) 2004-03-18 2005-02-14 Sequentielle lithographische verfahren zur reduktion von stapelfehler-nukleierungsstellen und strukturen mit verringerten stapelfehler-nukleierungsstellen

Country Status (7)

Country Link
US (2) US7109521B2 (de)
JP (1) JP5014117B2 (de)
KR (1) KR20060128013A (de)
CA (1) CA2554815A1 (de)
DE (1) DE602005020911D1 (de)
EP (1) EP1726037B1 (de)
WO (1) WO2005095679A3 (de)

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Also Published As

Publication number Publication date Type
US20060243985A1 (en) 2006-11-02 application
CA2554815A1 (en) 2005-10-13 application
US7226805B2 (en) 2007-06-05 grant
WO2005095679A3 (en) 2005-12-08 application
JP2007529901A (ja) 2007-10-25 application
KR20060128013A (ko) 2006-12-13 application
US20050205872A1 (en) 2005-09-22 application
WO2005095679A2 (en) 2005-10-13 application
EP1726037A2 (de) 2006-11-29 application
US7109521B2 (en) 2006-09-19 grant
JP5014117B2 (ja) 2012-08-29 grant
EP1726037B1 (de) 2010-04-28 grant

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