DE602005018738D1 - Speichervorrichtung mit auf Zeitverschiebung basierender Referenzzellenemulation - Google Patents

Speichervorrichtung mit auf Zeitverschiebung basierender Referenzzellenemulation

Info

Publication number
DE602005018738D1
DE602005018738D1 DE602005018738T DE602005018738T DE602005018738D1 DE 602005018738 D1 DE602005018738 D1 DE 602005018738D1 DE 602005018738 T DE602005018738 T DE 602005018738T DE 602005018738 T DE602005018738 T DE 602005018738T DE 602005018738 D1 DE602005018738 D1 DE 602005018738D1
Authority
DE
Germany
Prior art keywords
memory device
reference cell
time shift
shift based
based reference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005018738T
Other languages
English (en)
Inventor
Federico Pio
Efrem Bolandrina
Daniele Vimercati
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE602005018738D1 publication Critical patent/DE602005018738D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5634—Reference cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
DE602005018738T 2005-03-03 2005-03-03 Speichervorrichtung mit auf Zeitverschiebung basierender Referenzzellenemulation Active DE602005018738D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05101660A EP1699055B1 (de) 2005-03-03 2005-03-03 Speichervorrichtung mit auf Zeitverschiebung basierender Referenzzellenemulation

Publications (1)

Publication Number Publication Date
DE602005018738D1 true DE602005018738D1 (de) 2010-02-25

Family

ID=34938879

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005018738T Active DE602005018738D1 (de) 2005-03-03 2005-03-03 Speichervorrichtung mit auf Zeitverschiebung basierender Referenzzellenemulation

Country Status (3)

Country Link
US (1) US7345905B2 (de)
EP (1) EP1699055B1 (de)
DE (1) DE602005018738D1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITTO20040470A1 (it) * 2004-07-08 2004-10-08 St Microelectronics Srl Circuito di lettura/verifica di celle di memoria multilivello con tensione di lettura a rampa e relativo metodo di lettura/verifica.
DE602005004253T2 (de) * 2005-01-28 2009-01-08 Stmicroelectronics S.R.L., Agrate Brianza Speicher, bei dem zum Lesen an die Wortleitung eine Spannungs-Rampe angelegt wird, die mit einem Stromgenerator erzeugt wird
EP1699054A1 (de) 2005-03-03 2006-09-06 STMicroelectronics S.r.l. Speichervorrichtung mit rampenartiger Vorspannungsanordnung und reduzierter Anzahl von Referenzzellen
EP1843356A1 (de) 2006-04-03 2007-10-10 STMicroelectronics S.r.l. Verfahren und System zur Aktualisierung einer Speichervorrichtung während ihres Lesens
KR100822560B1 (ko) * 2006-09-04 2008-04-16 주식회사 하이닉스반도체 낸드 플래시 메모리의 전류 측정 회로
US7787282B2 (en) 2008-03-21 2010-08-31 Micron Technology, Inc. Sensing resistance variable memory
US7787307B2 (en) * 2008-12-08 2010-08-31 Micron Technology, Inc. Memory cell shift estimation method and apparatus
JPWO2011033701A1 (ja) * 2009-09-16 2013-02-07 パナソニック株式会社 半導体記憶装置
US8625345B2 (en) 2011-07-27 2014-01-07 Micron Technology, Inc. Determining and transferring data from a memory array
US10153022B1 (en) 2017-06-09 2018-12-11 Micron Technology, Inc Time-based access of a memory cell
US10153021B1 (en) 2017-06-09 2018-12-11 Micron Technology, Inc. Time-based access of a memory cell
US10431301B2 (en) 2017-12-22 2019-10-01 Micron Technology, Inc. Auto-referenced memory cell read techniques
US10566052B2 (en) 2017-12-22 2020-02-18 Micron Technology, Inc. Auto-referenced memory cell read techniques
US10607664B2 (en) 2018-03-22 2020-03-31 Micron Technology, Inc. Sub-threshold voltage leakage current tracking
US10424372B1 (en) 2018-04-19 2019-09-24 Micron Technology, Inc. Apparatuses and methods for sensing memory cells
US10796755B2 (en) 2018-04-19 2020-10-06 Micron Technology, Inc. Permutation coding for improved memory cell operations
JP2021047966A (ja) * 2019-09-19 2021-03-25 キオクシア株式会社 半導体メモリ装置及び方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4495602A (en) * 1981-12-28 1985-01-22 Mostek Corporation Multi-bit read only memory circuit
US5967976A (en) * 1994-08-19 1999-10-19 Novoste Corporation Apparatus and methods for procedures related to the electrophysiology of the heart
US5634924A (en) * 1995-08-28 1997-06-03 Symbiosis Corporation Bipolar roller electrodes and electrocautery probes for use with a resectoscope
US5694366A (en) * 1996-05-01 1997-12-02 Micron Quantum Devices, Inc. OP amp circuit with variable resistance and memory system including same
US6091995A (en) * 1996-11-08 2000-07-18 Surx, Inc. Devices, methods, and systems for shrinking tissues
TW367503B (en) * 1996-11-29 1999-08-21 Sanyo Electric Co Non-volatile semiconductor device
DE69723814D1 (de) * 1997-05-09 2003-09-04 St Microelectronics Srl Verfahren und Vorrichtung zum Analogprogrammieren von nichtflüchtigen Speicherzellen, insbesondere für Flash-Speicherzellen
US6953461B2 (en) * 2002-05-16 2005-10-11 Tissuelink Medical, Inc. Fluid-assisted medical devices, systems and methods
JP3653449B2 (ja) * 2000-06-15 2005-05-25 シャープ株式会社 不揮発性半導体記憶装置
JP4790268B2 (ja) * 2002-10-23 2011-10-12 パロマー・メディカル・テクノロジーズ・インコーポレイテッド 冷却剤及び局所物質と共に使用する光処理装置
US20040181214A1 (en) * 2003-03-13 2004-09-16 Garabedian Robert J. Passively cooled array
EP1467377B1 (de) 2003-04-10 2007-11-28 STMicroelectronics S.r.l. Leseverfahren eines nichtflüchtigen Halbleiterspeichers und zugehörige Vorrichtung
IL161648A0 (en) * 2003-04-29 2004-09-27 Saifun Semiconductors Ltd Apparatus and methods for multi-level sensing in a memory array

Also Published As

Publication number Publication date
EP1699055A1 (de) 2006-09-06
US7345905B2 (en) 2008-03-18
EP1699055B1 (de) 2010-01-06
US20060209594A1 (en) 2006-09-21

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Legal Events

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