DE602005014103D1 - Schmelzeinheitanordnung zur beladung eines kristal - Google Patents

Schmelzeinheitanordnung zur beladung eines kristal

Info

Publication number
DE602005014103D1
DE602005014103D1 DE602005014103T DE602005014103T DE602005014103D1 DE 602005014103 D1 DE602005014103 D1 DE 602005014103D1 DE 602005014103 T DE602005014103 T DE 602005014103T DE 602005014103 T DE602005014103 T DE 602005014103T DE 602005014103 D1 DE602005014103 D1 DE 602005014103D1
Authority
DE
Germany
Prior art keywords
loading
crystal
unit assembly
melt unit
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602005014103T
Other languages
German (de)
English (en)
Inventor
John Davis Holder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Priority claimed from US11/155,105 external-priority patent/US7344594B2/en
Priority claimed from US11/155,385 external-priority patent/US7691199B2/en
Priority claimed from US11/155,104 external-priority patent/US7465351B2/en
Publication of DE602005014103D1 publication Critical patent/DE602005014103D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Developing Agents For Electrophotography (AREA)
  • Silicon Compounds (AREA)
DE602005014103T 2004-06-18 2005-06-17 Schmelzeinheitanordnung zur beladung eines kristal Expired - Lifetime DE602005014103D1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US58130804P 2004-06-18 2004-06-18
US11/155,105 US7344594B2 (en) 2004-06-18 2005-06-17 Melter assembly and method for charging a crystal forming apparatus with molten source material
US11/155,385 US7691199B2 (en) 2004-06-18 2005-06-17 Melter assembly and method for charging a crystal forming apparatus with molten source material
PCT/US2005/021369 WO2006009802A2 (en) 2004-06-18 2005-06-17 A melter assembly and method for charging a crystal forming apparatus with molten source material
US11/155,104 US7465351B2 (en) 2004-06-18 2005-06-17 Melter assembly and method for charging a crystal forming apparatus with molten source material

Publications (1)

Publication Number Publication Date
DE602005014103D1 true DE602005014103D1 (de) 2009-06-04

Family

ID=35351655

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005014103T Expired - Lifetime DE602005014103D1 (de) 2004-06-18 2005-06-17 Schmelzeinheitanordnung zur beladung eines kristal

Country Status (7)

Country Link
EP (1) EP1756337B1 (https=)
JP (1) JP5080971B2 (https=)
KR (1) KR101300309B1 (https=)
CN (2) CN101724903B (https=)
DE (1) DE602005014103D1 (https=)
TW (1) TWI347377B (https=)
WO (1) WO2006009802A2 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1958925A1 (en) 2007-02-13 2008-08-20 Vivoxid Oy A system and method for manufacturing fibres
DE102008013326B4 (de) * 2008-03-10 2013-03-28 Siltronic Ag Induktionsheizspule und Verfahren zum Schmelzen von Granulat aus Halbleitermaterial
CN101999014B (zh) * 2008-05-20 2012-11-14 信越半导体股份有限公司 单晶制造装置
JP5163386B2 (ja) * 2008-09-17 2013-03-13 株式会社Ｓｕｍｃｏ シリコン融液形成装置
DE102009005837B4 (de) * 2009-01-21 2011-10-06 Pv Silicon Forschungs Und Produktions Gmbh Verfahren und Vorrichtung zur Herstellung von Siliziumdünnstäben
DE102011007149A1 (de) * 2011-04-11 2012-10-11 Streicher Maschinenbau GmbH & Co. KG Verfahren und Vorrichtung zur Herstellung von Material mit mono- oder multikristalliner Struktur
US9096946B2 (en) * 2011-05-12 2015-08-04 Korea Institute Of Energy Research Reusable dual crucible for silicon melting and manufacturing apparatus of silicon slim plate including the same
CN102718221B (zh) * 2012-06-28 2014-06-11 厦门大学 多晶硅自封堵浇铸装置
US9664448B2 (en) * 2012-07-30 2017-05-30 Solar World Industries America Inc. Melting apparatus
DE102013203740B4 (de) * 2013-03-05 2020-06-18 Solarworld Industries Gmbh Vorrichtung und Vefahren zur Herstellung von Silizium-Blöcken
JP6372079B2 (ja) * 2013-12-27 2018-08-15 シンフォニアテクノロジー株式会社 加熱溶解装置、加熱溶解システムおよび出湯制御装置
US10030317B2 (en) * 2014-10-17 2018-07-24 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controlling thickness of a crystalline sheet grown on a melt
KR101671593B1 (ko) * 2014-12-31 2016-11-01 주식회사 티씨케이 잉곳 성장장치의 리플렉터
JP6503933B2 (ja) * 2015-07-02 2019-04-24 株式会社Sumco シリコン融液供給装置及び方法並びにシリコン単結晶製造装置
TWI630365B (zh) * 2016-11-11 2018-07-21 財團法人金屬工業研究發展中心 Radon device with temperature control design and temperature control method thereof
KR102135061B1 (ko) * 2017-12-21 2020-07-17 주식회사 포스코 고휘발성 원소의 표준 시료 제조 장치 및 방법
CN111041554B (zh) * 2020-01-16 2021-05-25 江苏大学 一种用于晶硅铸锭炉的载气导流装置及其导流方法
US12480853B2 (en) * 2021-09-28 2025-11-25 University Of Central Florida Research Foundation, Inc. Crucibles for thermogravimetric analysis (TGA)
CN115852484B (zh) * 2023-02-27 2023-05-16 杭州天桴光电技术有限公司 一种高效制备氟化镁多晶光学镀膜材料的装置和方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4106589C2 (de) * 1991-03-01 1997-04-24 Wacker Siltronic Halbleitermat Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski
US5178719A (en) * 1991-08-20 1993-01-12 Horiba Instruments, Inc. Continuous refill crystal growth method
US5993540A (en) * 1995-06-16 1999-11-30 Optoscint, Inc. Continuous crystal plate growth process and apparatus
US6800137B2 (en) * 1995-06-16 2004-10-05 Phoenix Scientific Corporation Binary and ternary crystal purification and growth method and apparatus
JPH10279390A (ja) * 1997-02-04 1998-10-20 Komatsu Electron Metals Co Ltd 石英るつぼへの原料装填装置及び原料装填方法
JPH1192276A (ja) 1997-09-22 1999-04-06 Super Silicon Kenkyusho:Kk 半導体単結晶の製造装置及び半導体単結晶の製造方法
FR2772741B1 (fr) * 1997-12-19 2000-03-10 Centre Nat Rech Scient Procede et installation d'affinage du silicium
US6402840B1 (en) * 1999-08-10 2002-06-11 Optoscint, Inc. Crystal growth employing embedded purification chamber
FR2831881B1 (fr) * 2001-11-02 2004-01-16 Hubert Lauvray Procede de purification de silicium metallurgique par plasma inductif couple a une solidification directionnelle et obtention directe de silicium de qualite solaire
FR2869028B1 (fr) * 2004-04-20 2006-07-07 Efd Induction Sa Sa Procede et installation de fabrication de blocs d'un materiau semiconducteur

Also Published As

Publication number Publication date
JP2008503427A (ja) 2008-02-07
WO2006009802A2 (en) 2006-01-26
CN101006205A (zh) 2007-07-25
WO2006009802A3 (en) 2006-08-24
TW200617220A (en) 2006-06-01
EP1756337B1 (en) 2009-04-22
CN101006205B (zh) 2011-11-09
KR101300309B1 (ko) 2013-08-28
EP1756337A2 (en) 2007-02-28
JP5080971B2 (ja) 2012-11-21
CN101724903A (zh) 2010-06-09
TWI347377B (en) 2011-08-21
KR20070042971A (ko) 2007-04-24
CN101724903B (zh) 2013-02-13

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