DE602004030214D1 - Elektronisches bauteil - Google Patents

Elektronisches bauteil

Info

Publication number
DE602004030214D1
DE602004030214D1 DE602004030214T DE602004030214T DE602004030214D1 DE 602004030214 D1 DE602004030214 D1 DE 602004030214D1 DE 602004030214 T DE602004030214 T DE 602004030214T DE 602004030214 T DE602004030214 T DE 602004030214T DE 602004030214 D1 DE602004030214 D1 DE 602004030214D1
Authority
DE
Germany
Prior art keywords
electronic component
organic semiconductor
semiconductor material
ambipolar
behaviour
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004030214T
Other languages
English (en)
Inventor
Sepas Setayesh
Leeuw Dagobert M De
Michael Buechel
Thomas D Anthopoulos
Wilhelmus P Nijssen
Eduard J Meijer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Polymer Vision BV
Original Assignee
Polymer Vision BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Polymer Vision BV filed Critical Polymer Vision BV
Publication of DE602004030214D1 publication Critical patent/DE602004030214D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/331—Metal complexes comprising an iron-series metal, e.g. Fe, Co, Ni
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/626—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/653—Aromatic compounds comprising a hetero atom comprising only oxygen as heteroatom
DE602004030214T 2003-01-28 2004-01-27 Elektronisches bauteil Expired - Lifetime DE602004030214D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP03100177 2003-01-28
PCT/IB2004/050055 WO2004068609A1 (en) 2003-01-28 2004-01-27 Electronic device and method of manufacturing thereof

Publications (1)

Publication Number Publication Date
DE602004030214D1 true DE602004030214D1 (de) 2011-01-05

Family

ID=32798988

Family Applications (2)

Application Number Title Priority Date Filing Date
DE602004005824T Expired - Fee Related DE602004005824T2 (de) 2003-01-28 2004-01-26 Elektronische vorrichtung
DE602004030214T Expired - Lifetime DE602004030214D1 (de) 2003-01-28 2004-01-27 Elektronisches bauteil

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE602004005824T Expired - Fee Related DE602004005824T2 (de) 2003-01-28 2004-01-26 Elektronische vorrichtung

Country Status (8)

Country Link
US (2) US20060243965A1 (de)
EP (2) EP1590721B1 (de)
JP (1) JP2006518938A (de)
KR (1) KR20050096162A (de)
CN (2) CN1742392A (de)
AT (2) ATE359545T1 (de)
DE (2) DE602004005824T2 (de)
WO (2) WO2004068267A2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004008784B3 (de) * 2004-02-23 2005-09-15 Infineon Technologies Ag Verfahren zur Durchkontaktierung von Feldeffekttransistoren mit einer selbstorganisierten Monolage einer organischen Verbindung als Gatedielektrikum
JP4661065B2 (ja) * 2004-03-22 2011-03-30 セイコーエプソン株式会社 相補型有機半導体装置
TWI228833B (en) * 2004-05-04 2005-03-01 Ind Tech Res Inst Method for enhancing the electrical characteristics of organic electronic devices
DE102004059467A1 (de) * 2004-12-10 2006-07-20 Polyic Gmbh & Co. Kg Gatter aus organischen Feldeffekttransistoren
KR100585629B1 (ko) * 2005-02-04 2006-06-07 삼성전자주식회사 신뢰성을 향상시키는 안티퓨즈 회로 및 이를 이용한안티퓨징 방법
DE102005034414B4 (de) * 2005-07-22 2007-11-15 Siemens Ag Verwendung eines lösungsprozessierbaren Materials als aktive halbleitende Schicht in einem n-Typ-Transistor
US20070146426A1 (en) * 2005-12-28 2007-06-28 Nelson Brian K All-inkjet printed thin film transistor
TWI345326B (en) * 2006-03-29 2011-07-11 Pioneer Corp Organic thin film transistor device and manufacturing method therefor
US8247801B2 (en) * 2006-03-31 2012-08-21 Imec Organic semi-conductor photo-detecting device
US20070286953A1 (en) * 2006-05-20 2007-12-13 Macpherson Charles D Solution processible materials and their use in electronic devices
KR100943146B1 (ko) * 2007-02-13 2010-02-18 주식회사 엘지화학 티아졸로티아졸 유도체를 이용한 유기 트랜지스터 및 이의제조방법
US8129714B2 (en) * 2007-02-16 2012-03-06 Idemitsu Kosan Co., Ltd. Semiconductor, semiconductor device, complementary transistor circuit device
GB0706756D0 (en) * 2007-04-05 2007-05-16 Imp Innovations Ltd Improvements in organic field-effect transistors
US7652339B2 (en) * 2007-04-06 2010-01-26 Xerox Corporation Ambipolar transistor design
DE102009043348B4 (de) * 2009-09-29 2012-12-13 Siemens Aktiengesellschaft Material für eine photoaktive Schicht in organischen Photodioden, Verwendung dazu, sowie eine organische Photodiode
JP5875709B2 (ja) * 2012-02-02 2016-03-02 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 有機半導体デバイスの製造方法
US10005879B2 (en) 2012-02-03 2018-06-26 Basf Se Method for producing an organic semiconductor device
US9147615B2 (en) 2014-02-14 2015-09-29 International Business Machines Corporation Ambipolar synaptic devices
US10692863B2 (en) * 2016-09-30 2020-06-23 Rohm Co., Ltd. Semiconductor device and semiconductor package
US10475698B2 (en) * 2017-03-31 2019-11-12 Teresa Oh Ambipolar transistor and electronic sensor of high sensitivity using the same
KR102363387B1 (ko) * 2020-01-21 2022-02-15 금오공과대학교 산학협력단 불소 처리 그래핀을 이용한 2차원 구조 센서

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2813428B2 (ja) * 1989-08-17 1998-10-22 三菱電機株式会社 電界効果トランジスタ及び該電界効果トランジスタを用いた液晶表示装置
JP3522771B2 (ja) * 1991-03-22 2004-04-26 三菱電機株式会社 インバータ
US5380807A (en) * 1992-01-15 1995-01-10 U.S. Philips Corporation Electrically conductive alternating copolymer and method of preparing such a copolymer
JP3246189B2 (ja) * 1994-06-28 2002-01-15 株式会社日立製作所 半導体表示装置
TW293172B (de) * 1994-12-09 1996-12-11 At & T Corp
US6278127B1 (en) * 1994-12-09 2001-08-21 Agere Systems Guardian Corp. Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor
US5574291A (en) * 1994-12-09 1996-11-12 Lucent Technologies Inc. Article comprising a thin film transistor with low conductivity organic layer
JPH0974217A (ja) * 1995-09-07 1997-03-18 Nippon Shokubai Co Ltd 有機太陽電池
US5625199A (en) * 1996-01-16 1997-04-29 Lucent Technologies Inc. Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors
JP4509228B2 (ja) * 1997-08-22 2010-07-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 有機材料から成る電界効果トランジスタ及びその製造方法
EP1149420B1 (de) * 1999-10-11 2015-03-04 Creator Technology B.V. Integrierter schaltkreis
US6284562B1 (en) * 1999-11-17 2001-09-04 Agere Systems Guardian Corp. Thin film transistors
US6429040B1 (en) * 2000-04-06 2002-08-06 Agere Systems Guardian Corp. Device comprising a bipolar semi-conducting film
US6452207B1 (en) * 2001-03-30 2002-09-17 Lucent Technologies Inc. Organic semiconductor devices
JP2002326305A (ja) * 2001-04-27 2002-11-12 Nisshinbo Ind Inc 透視性電磁波シールド板、その製造方法及びディスプレイ装置
US6794220B2 (en) * 2001-09-05 2004-09-21 Konica Corporation Organic thin-film semiconductor element and manufacturing method for the same
JP2005505142A (ja) * 2001-10-01 2005-02-17 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 電子デバイス及び構成並びに方法
EP1306909A1 (de) * 2001-10-24 2003-05-02 Interuniversitair Micro-Elektronica Centrum Ambipolarer organischer Transistor
US6555411B1 (en) * 2001-12-18 2003-04-29 Lucent Technologies Inc. Thin film transistors

Also Published As

Publication number Publication date
ATE489730T1 (de) 2010-12-15
EP1590721B1 (de) 2007-04-11
KR20050096162A (ko) 2005-10-05
US20060243965A1 (en) 2006-11-02
CN1742393B (zh) 2011-12-28
CN1742393A (zh) 2006-03-01
DE602004005824D1 (de) 2007-05-24
JP2006518938A (ja) 2006-08-17
CN1742392A (zh) 2006-03-01
US7750339B2 (en) 2010-07-06
EP1590721A2 (de) 2005-11-02
EP1590839B1 (de) 2010-11-24
EP1590839A1 (de) 2005-11-02
WO2004068267A3 (en) 2004-09-16
WO2004068609A1 (en) 2004-08-12
WO2004068267A2 (en) 2004-08-12
ATE359545T1 (de) 2007-05-15
US20060163561A1 (en) 2006-07-27
DE602004005824T2 (de) 2008-01-10

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