DE602004006639T2 - Verfahren zur herstellung einer elektrostatischen mems-einspannvorrichtung - Google Patents

Verfahren zur herstellung einer elektrostatischen mems-einspannvorrichtung Download PDF

Info

Publication number
DE602004006639T2
DE602004006639T2 DE602004006639T DE602004006639T DE602004006639T2 DE 602004006639 T2 DE602004006639 T2 DE 602004006639T2 DE 602004006639 T DE602004006639 T DE 602004006639T DE 602004006639 T DE602004006639 T DE 602004006639T DE 602004006639 T2 DE602004006639 T2 DE 602004006639T2
Authority
DE
Germany
Prior art keywords
conductive layer
electrically conductive
forming
electrically
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004006639T
Other languages
German (de)
English (en)
Other versions
DE602004006639D1 (de
Inventor
Peter Essex KELLERMAN
Shu Malden QIN
Ernie Rockport ALLEN
Douglas S. Hamilton BROWN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of DE602004006639D1 publication Critical patent/DE602004006639D1/de
Application granted granted Critical
Publication of DE602004006639T2 publication Critical patent/DE602004006639T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Jigs For Machine Tools (AREA)
DE602004006639T 2003-10-28 2004-10-28 Verfahren zur herstellung einer elektrostatischen mems-einspannvorrichtung Expired - Lifetime DE602004006639T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US695153 2003-10-28
US10/695,153 US6946403B2 (en) 2003-10-28 2003-10-28 Method of making a MEMS electrostatic chuck
PCT/US2004/035891 WO2005045921A1 (en) 2003-10-28 2004-10-28 Method of making a mems electrostatic chuck

Publications (2)

Publication Number Publication Date
DE602004006639D1 DE602004006639D1 (de) 2007-07-05
DE602004006639T2 true DE602004006639T2 (de) 2008-01-31

Family

ID=34549968

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004006639T Expired - Lifetime DE602004006639T2 (de) 2003-10-28 2004-10-28 Verfahren zur herstellung einer elektrostatischen mems-einspannvorrichtung

Country Status (8)

Country Link
US (1) US6946403B2 (https=)
EP (1) EP1678752B1 (https=)
JP (1) JP4725740B2 (https=)
KR (1) KR20060092245A (https=)
CN (1) CN100524683C (https=)
DE (1) DE602004006639T2 (https=)
TW (1) TWI360856B (https=)
WO (1) WO2005045921A1 (https=)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7072166B2 (en) * 2003-09-12 2006-07-04 Axcelis Technologies, Inc. Clamping and de-clamping semiconductor wafers on a J-R electrostatic chuck having a micromachined surface by using force delay in applying a single-phase square wave AC clamping voltage
KR100666039B1 (ko) * 2003-12-05 2007-01-10 동경 엘렉트론 주식회사 정전척
US7457097B2 (en) * 2004-07-27 2008-11-25 International Business Machines Corporation Pressure assisted wafer holding apparatus and control method
US20070081880A1 (en) * 2005-09-29 2007-04-12 Riordon Benjamin B Wafer-handling method, system, and apparatus
US8226769B2 (en) * 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
AU2007285483B2 (en) 2006-05-11 2011-12-22 Regenics As Administration of cells and cellular extracts for rejuvenation
WO2008051369A2 (en) * 2006-10-25 2008-05-02 Axcelis Technologies, Inc. Low-cost electrostatic clamp with fast declamp time and the manufacture
US20090115060A1 (en) * 2007-11-01 2009-05-07 Infineon Technologies Ag Integrated circuit device and method
CA2723848C (en) 2008-05-09 2013-01-08 Regenics As Method of making salmon egg cytoplasmic extracts and use for increasing collagen production in skin
DE102008054982A1 (de) * 2008-12-19 2010-07-01 Carl Zeiss Smt Ag Wafer-Chuck für die EUV-Lithographie
US7932570B1 (en) * 2009-11-09 2011-04-26 Honeywell International Inc. Silicon tab edge mount for a wafer level package
US9330952B2 (en) 2009-12-30 2016-05-03 Solexel, Inc. Bipolar mobile electrostatic carriers for wafer processing
AU2011249478B2 (en) 2010-05-06 2014-12-04 Regenics As Use of cellular extracts for skin rejuvenation
CN103222043B (zh) * 2010-09-08 2016-10-12 恩特格林斯公司 一种高传导静电夹盘
US10242890B2 (en) * 2011-08-08 2019-03-26 Applied Materials, Inc. Substrate support with heater
NL2009874A (en) 2011-12-23 2013-06-26 Asml Netherlands Bv Support, lithographic apparatus and device manufacturing method.
JP6359236B2 (ja) * 2012-05-07 2018-07-18 トーカロ株式会社 静電チャック
WO2014008110A1 (en) * 2012-07-06 2014-01-09 LuxVue Technology Corporation Compliant bipolar micro device transfer head with silicon electrodes
US8569115B1 (en) 2012-07-06 2013-10-29 LuxVue Technology Corporation Method of forming a compliant bipolar micro device transfer head with silicon electrodes
JP5441021B1 (ja) * 2012-09-12 2014-03-12 Ｔｏｔｏ株式会社 静電チャック
EP3459522B1 (en) 2012-12-10 2021-02-17 Regenics AS Use of egg cellular extracts for wound treatment
JP6526575B2 (ja) 2013-02-07 2019-06-05 エーエスエムエル ホールディング エヌ．ブイ． リソグラフィ装置及び方法
US9878901B2 (en) 2014-04-04 2018-01-30 Analog Devices, Inc. Fabrication of tungsten MEMS structures
US20160230269A1 (en) * 2015-02-06 2016-08-11 Applied Materials, Inc. Radially outward pad design for electrostatic chuck surface
US10381248B2 (en) 2015-06-22 2019-08-13 Lam Research Corporation Auto-correction of electrostatic chuck temperature non-uniformity
US10763142B2 (en) 2015-06-22 2020-09-01 Lam Research Corporation System and method for determining field non-uniformities of a wafer processing chamber using a wafer processing parameter
US10386821B2 (en) * 2015-06-22 2019-08-20 Lam Research Corporation Systems and methods for calibrating scalar field contribution values for a limited number of sensors including a temperature value of an electrostatic chuck and estimating temperature distribution profiles based on calibrated values
US9673025B2 (en) * 2015-07-27 2017-06-06 Lam Research Corporation Electrostatic chuck including embedded faraday cage for RF delivery and associated methods for operation, monitoring, and control
US20180025931A1 (en) * 2016-07-22 2018-01-25 Applied Materials, Inc. Processed wafer as top plate of a workpiece carrier in semiconductor and mechanical processing
US20180102247A1 (en) * 2016-10-06 2018-04-12 Asm Ip Holding B.V. Substrate processing apparatus and method of manufacturing semiconductor device
US10535505B2 (en) * 2016-11-11 2020-01-14 Lam Research Corporation Plasma light up suppression
US10943808B2 (en) * 2016-11-25 2021-03-09 Applied Materials, Inc. Ceramic electrostatic chuck having a V-shape seal band
US20180148835A1 (en) 2016-11-29 2018-05-31 Lam Research Corporation Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating
EP3884513A4 (en) * 2018-11-19 2022-08-03 Entegris, Inc. ELECTROSTATIC CHUCK WITH CHARGE DISCHARGE COATING
JP7350153B2 (ja) * 2020-03-04 2023-09-25 東京エレクトロン株式会社 基板処理装置および基板処理方法
US12272585B2 (en) * 2021-04-27 2025-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer chuck structure with holes in upper surface to improve temperature uniformity
US12497697B2 (en) * 2021-10-08 2025-12-16 Applied Materials, Inc. Layer with discrete islands formed on a substrate support
KR102715367B1 (ko) * 2021-12-02 2024-10-08 세메스 주식회사 기판 지지 유닛 및 이를 포함하는 기판 처리 장치

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5103367A (en) * 1987-05-06 1992-04-07 Unisearch Limited Electrostatic chuck using A.C. field excitation
JP2779950B2 (ja) * 1989-04-25 1998-07-23 東陶機器株式会社 静電チャックの電圧印加方法および電圧印加装置
US5452177A (en) * 1990-06-08 1995-09-19 Varian Associates, Inc. Electrostatic wafer clamp
US5325261A (en) * 1991-05-17 1994-06-28 Unisearch Limited Electrostatic chuck with improved release
US5444597A (en) * 1993-01-15 1995-08-22 Blake; Julian G. Wafer release method and apparatus
JPH07153825A (ja) * 1993-11-29 1995-06-16 Toto Ltd 静電チャック及びこの静電チャックを用いた被吸着体の処理方法
US5822171A (en) * 1994-02-22 1998-10-13 Applied Materials, Inc. Electrostatic chuck with improved erosion resistance
US5583736A (en) * 1994-11-17 1996-12-10 The United States Of America As Represented By The Department Of Energy Micromachined silicon electrostatic chuck
US5792562A (en) * 1995-01-12 1998-08-11 Applied Materials, Inc. Electrostatic chuck with polymeric impregnation and method of making
JP3005461B2 (ja) * 1995-11-24 2000-01-31 日本電気株式会社 静電チャック
US5838529A (en) * 1995-12-22 1998-11-17 Lam Research Corporation Low voltage electrostatic clamp for substrates such as dielectric substrates
US5810933A (en) * 1996-02-16 1998-09-22 Novellus Systems, Inc. Wafer cooling device
US5958813A (en) * 1996-11-26 1999-09-28 Kyocera Corporation Semi-insulating aluminum nitride sintered body
US6117246A (en) * 1997-01-31 2000-09-12 Applied Materials, Inc. Conductive polymer pad for supporting a workpiece upon a workpiece support surface of an electrostatic chuck
JPH10284583A (ja) 1997-04-04 1998-10-23 Mitsubishi Electric Corp 静電チャック除電方法及び半導体製造装置
US6138745A (en) * 1997-09-26 2000-10-31 Cvc Products, Inc. Two-stage sealing system for thermally conductive chuck
US5969934A (en) * 1998-04-10 1999-10-19 Varian Semiconductor Equipment Associats, Inc. Electrostatic wafer clamp having low particulate contamination of wafers
US6149774A (en) * 1998-06-10 2000-11-21 Delsys Pharmaceutical Corporation AC waveforms biasing for bead manipulating chucks
JP3323135B2 (ja) * 1998-08-31 2002-09-09 京セラ株式会社 静電チャック
TW432453B (en) * 1998-11-12 2001-05-01 Applied Materials Inc Apparatus for protecting a substrate support surface and method of fabricating same
US6067222A (en) * 1998-11-25 2000-05-23 Applied Materials, Inc. Substrate support apparatus and method for fabricating same
US6236555B1 (en) * 1999-04-19 2001-05-22 Applied Materials, Inc. Method for rapidly dechucking a semiconductor wafer from an electrostatic chuck utilizing a hysteretic discharge cycle
JP3805134B2 (ja) * 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
JP3859937B2 (ja) * 2000-06-02 2006-12-20 住友大阪セメント株式会社 静電チャック
JP2002009139A (ja) * 2000-06-20 2002-01-11 Nikon Corp 静電チャック
WO2002001611A2 (en) * 2000-06-23 2002-01-03 Applied Materials, Inc. Electrostatic chuck and method of fabricating the same

Also Published As

Publication number Publication date
JP4725740B2 (ja) 2011-07-13
DE602004006639D1 (de) 2007-07-05
KR20060092245A (ko) 2006-08-22
EP1678752A1 (en) 2006-07-12
EP1678752B1 (en) 2007-05-23
TW200518144A (en) 2005-06-01
CN100524683C (zh) 2009-08-05
US6946403B2 (en) 2005-09-20
WO2005045921A1 (en) 2005-05-19
US20050099758A1 (en) 2005-05-12
JP2007510310A (ja) 2007-04-19
CN1894788A (zh) 2007-01-10
TWI360856B (en) 2012-03-21

Similar Documents

Publication Publication Date Title
DE602004006639T2 (de) Verfahren zur herstellung einer elektrostatischen mems-einspannvorrichtung
EP0703619B1 (de) Verfahren zur Herstellung einer dreidimensionalen integrierten Schaltung unter Erreichung hoher Systemausbeuten
EP0010596B1 (de) Verfahren zur Ausbildung von Maskenöffnungen bei der Herstellung von Halbleiteranordnungen
DE69325633T2 (de) Elektrostatische Haltevorrichtung benutzbar in Hochdichteplasma
DE102012003118B4 (de) Tiefgrabenkondensator mit konform aufgebrachten leitenden Schichten, die Druckspannung aufweisen
DE69717356T2 (de) Verfahren zur Herstellung von Heteroübergang-Bipolartransistoren mit hoher Verstärkung
DE60313861T2 (de) Veränderbare Temperaturprozesse für verstellbare elektrostatische Haltevorrichtung
DE10063991B4 (de) Verfahren zur Herstellung von mikromechanischen Bauelementen
DE69635972T2 (de) Plasma-Ätz-Verfahren
DE102005030585B4 (de) Halbleiterbauelement mit einem vertikalen Entkopplungskondensator und Verfahren zu seiner Herstellung
US6905984B2 (en) MEMS based contact conductivity electrostatic chuck
DE102014223904A1 (de) Kondensator und Verfahren zum Herstellen desselben
DE102010064288A1 (de) Halbleiterbauelement mit Kontaktelementen mit silizidierten Seitenwandgebieten
DE102010029526A1 (de) Halbleiterbauelement mit einer gestapelten Chipkonfiguration mit einem integrierten Peltier-Element
DE10324434A1 (de) Verfahren zum Einstellen der Ätzselektivität durch Anpassen von Aspektverhältnissen bei einem Mehrebenen-Ätzprozess
EP2010449B1 (de) Mikromechanisches bauelement mit waferdurchkontaktierung sowie entsprechendes herstellungsverfahren
DE102005057073A1 (de) Technik zur Verbesserung der mechanischen Spannungsübertragung in Kanalgebieten von NMOS- und PMOS-Transistoren
DE112006002952B4 (de) Verfahren zur Herstellung von Halbleiteranordnungen mit Spacern
DE60308609T2 (de) MEMS Schalter und Herstellungsverfahren
DE10255936B4 (de) Verfahren zur Herstellung einer Isolationsschicht und Verfahren zum Steuern einer Stickstoffkonzentration während der Herstellung der Isolationsschicht
DE102014101475A1 (de) Ätzen von porösem Metall
DE10305729A1 (de) RTCVD-Verfahren und -Reaktor mit verbesserter Gleichmäßigkeit der Beschichtung und Stufenabdeckung
DE10131709B4 (de) Verfahren zur Herstellung einseitiger Buried-Straps
DE102010028458A1 (de) Halbleiterbauelement mit Kontaktelementen und Metallsilizidgebieten, die in einer gemeinsamen Prozesssequenz hergestellt sind
DE10214065A1 (de) Verfahren zur Herstellung eines verbesserten Metallsilizidbereichs in einem Silizium enthaltenden leitenden Gebiet in einer integrierten Schaltung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition