DE60140845D1 - Bildaufnahmegerät - Google Patents
BildaufnahmegerätInfo
- Publication number
- DE60140845D1 DE60140845D1 DE60140845T DE60140845T DE60140845D1 DE 60140845 D1 DE60140845 D1 DE 60140845D1 DE 60140845 T DE60140845 T DE 60140845T DE 60140845 T DE60140845 T DE 60140845T DE 60140845 D1 DE60140845 D1 DE 60140845D1
- Authority
- DE
- Germany
- Prior art keywords
- imaging device
- imaging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000003384 imaging method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B3/00—Focusing arrangements of general interest for cameras, projectors or printers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/41—Extracting pixel data from a plurality of image sensors simultaneously picking up an image, e.g. for increasing the field of view by combining the outputs of a plurality of sensors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000316646A JP3495979B2 (ja) | 2000-10-17 | 2000-10-17 | 固体撮像素子及び撮像装置 |
JP2000337900A JP2002141488A (ja) | 2000-11-06 | 2000-11-06 | 固体撮像装置及び固体撮像システム |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60140845D1 true DE60140845D1 (de) | 2010-02-04 |
Family
ID=26602236
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60140845T Expired - Lifetime DE60140845D1 (de) | 2000-10-17 | 2001-10-16 | Bildaufnahmegerät |
Country Status (5)
Country | Link |
---|---|
US (1) | US7139028B2 (de) |
EP (2) | EP1198126B1 (de) |
KR (2) | KR100488371B1 (de) |
CN (2) | CN1159904C (de) |
DE (1) | DE60140845D1 (de) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080128844A1 (en) * | 2002-11-18 | 2008-06-05 | Tessera North America | Integrated micro-optical systems and cameras including the same |
US7262799B2 (en) * | 2000-10-25 | 2007-08-28 | Canon Kabushiki Kaisha | Image sensing apparatus and its control method, control program, and storage medium |
JP3950665B2 (ja) * | 2001-10-23 | 2007-08-01 | キヤノン株式会社 | 放射線撮像装置及び放射線撮像装置の撮像方法 |
JP2003143459A (ja) * | 2001-11-02 | 2003-05-16 | Canon Inc | 複眼撮像系およびこれを備えた装置 |
JP2003304544A (ja) * | 2002-04-10 | 2003-10-24 | Canon Inc | 撮像装置 |
JP2004112768A (ja) * | 2002-08-29 | 2004-04-08 | Sanyo Electric Co Ltd | 撮像装置 |
JP3658401B2 (ja) * | 2002-09-20 | 2005-06-08 | キヤノン株式会社 | 固体撮像装置及びそれを用いたカメラ |
US20040223064A1 (en) * | 2002-10-24 | 2004-11-11 | Canon Kabushiki Kaisha | Image pickup element, image pickup device, and differential amplifying circuit |
JP4323772B2 (ja) * | 2002-10-31 | 2009-09-02 | キヤノン株式会社 | 固体撮像装置、カメラ及びカメラ制御システム |
US7742088B2 (en) * | 2002-11-19 | 2010-06-22 | Fujifilm Corporation | Image sensor and digital camera |
US6979588B2 (en) * | 2003-01-29 | 2005-12-27 | Hynix Semiconductor Inc. | Method for manufacturing CMOS image sensor having microlens therein with high photosensitivity |
US7279353B2 (en) * | 2003-04-02 | 2007-10-09 | Micron Technology, Inc. | Passivation planarization |
CN1574370A (zh) * | 2003-05-30 | 2005-02-02 | 松下电器产业株式会社 | 固体摄像器件 |
KR100539082B1 (ko) | 2003-10-01 | 2006-01-10 | 주식회사 네패스 | 반도체 촬상소자의 패키지 구조 및 그 제조방법 |
JP4660086B2 (ja) * | 2003-12-01 | 2011-03-30 | 三洋電機株式会社 | 固体撮像素子 |
JP4794821B2 (ja) | 2004-02-19 | 2011-10-19 | キヤノン株式会社 | 固体撮像装置および撮像システム |
KR100674911B1 (ko) * | 2004-08-06 | 2007-01-26 | 삼성전자주식회사 | 이미지 센서 카메라 모듈 및 그 제조방법 |
US7564019B2 (en) | 2005-08-25 | 2009-07-21 | Richard Ian Olsen | Large dynamic range cameras |
US7795577B2 (en) * | 2004-08-25 | 2010-09-14 | Richard Ian Olsen | Lens frame and optical focus assembly for imager module |
US8124929B2 (en) * | 2004-08-25 | 2012-02-28 | Protarius Filo Ag, L.L.C. | Imager module optical focus and assembly method |
EP1812968B1 (de) | 2004-08-25 | 2019-01-16 | Callahan Cellular L.L.C. | Vorrichtung für mehrere kameraeinrichtungen und verfahren zu ihrem betrieb |
US7916180B2 (en) * | 2004-08-25 | 2011-03-29 | Protarius Filo Ag, L.L.C. | Simultaneous multiple field of view digital cameras |
EP1670066A1 (de) * | 2004-12-08 | 2006-06-14 | St Microelectronics S.A. | Herstellungsverfahren für eine integrierte Schaltung mit eingebettetem Spiegel und entsprechende Schaltung |
JP4277216B2 (ja) * | 2005-01-13 | 2009-06-10 | ソニー株式会社 | 撮像装置及び撮像結果の処理方法 |
US7935994B2 (en) * | 2005-02-24 | 2011-05-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light shield for CMOS imager |
JP5247007B2 (ja) | 2005-06-09 | 2013-07-24 | キヤノン株式会社 | 撮像装置及び撮像システム |
JP2007012995A (ja) * | 2005-07-01 | 2007-01-18 | Toshiba Corp | 超小型カメラモジュール及びその製造方法 |
US20070102622A1 (en) | 2005-07-01 | 2007-05-10 | Olsen Richard I | Apparatus for multiple camera devices and method of operating same |
US7964835B2 (en) | 2005-08-25 | 2011-06-21 | Protarius Filo Ag, L.L.C. | Digital cameras with direct luminance and chrominance detection |
US20070258006A1 (en) * | 2005-08-25 | 2007-11-08 | Olsen Richard I | Solid state camera optics frame and assembly |
US20070048343A1 (en) * | 2005-08-26 | 2007-03-01 | Honeywell International Inc. | Biocidal premixtures |
US7456044B2 (en) * | 2005-12-28 | 2008-11-25 | Dongbu Electronics Co., Ltd. | Method for manufacturing image sensor |
KR100795922B1 (ko) * | 2006-07-28 | 2008-01-21 | 삼성전자주식회사 | 이미지 픽업 소자 및 이미지 픽업 소자의 제조방법 |
US7978243B2 (en) * | 2007-02-28 | 2011-07-12 | Canon Kabushiki Kaisha | Imaging apparatus, driving method thereof, and imaging system |
US7999340B2 (en) * | 2007-03-07 | 2011-08-16 | Altasens, Inc. | Apparatus and method for forming optical black pixels with uniformly low dark current |
JP4346655B2 (ja) | 2007-05-15 | 2009-10-21 | 株式会社東芝 | 半導体装置 |
JP4480740B2 (ja) * | 2007-07-03 | 2010-06-16 | シャープ株式会社 | 固体撮像素子およびその製造方法、電子情報機器 |
JP2009252983A (ja) * | 2008-04-04 | 2009-10-29 | Canon Inc | 撮像センサー、及び撮像センサーの製造方法 |
JP4582205B2 (ja) * | 2008-06-12 | 2010-11-17 | トヨタ自動車株式会社 | 電動車両 |
ATE515798T1 (de) | 2008-08-19 | 2011-07-15 | St Microelectronics Rousset | Speicherung eines bildes in einem integrierten schaltkreis |
US8130289B2 (en) * | 2008-09-25 | 2012-03-06 | Aptima Imaging Corporation | System, method, and apparatus for correction of dark current error in semiconductor imaging devices |
FR2941327B1 (fr) * | 2009-01-22 | 2012-05-04 | St Microelectronics Sa | Dispositif de saisie d'images comprenant des moyens de rassemblement de pixels. |
US8300108B2 (en) * | 2009-02-02 | 2012-10-30 | L-3 Communications Cincinnati Electronics Corporation | Multi-channel imaging devices comprising unit cells |
JP2010282992A (ja) * | 2009-06-02 | 2010-12-16 | Sony Corp | 固体撮像装置、および、その製造方法、電子機器 |
JP2012059865A (ja) * | 2010-09-08 | 2012-03-22 | Sony Corp | 撮像素子および撮像装置 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
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DE3132808C2 (de) * | 1981-08-19 | 1984-01-26 | Nukem Gmbh, 6450 Hanau | "Vorrichtung zur zerstörungsfreien Prüfung ferromagnetischer Körper" |
US4956313A (en) * | 1987-08-17 | 1990-09-11 | International Business Machines Corporation | Via-filling and planarization technique |
JPH035956A (ja) * | 1989-06-02 | 1991-01-11 | Canon Inc | 静止画再生装置 |
US5262871A (en) * | 1989-11-13 | 1993-11-16 | Rutgers, The State University | Multiple resolution image sensor |
US5849632A (en) * | 1991-08-30 | 1998-12-15 | Micron Technology, Inc. | Method of passivating semiconductor wafers |
JP2566087B2 (ja) * | 1992-01-27 | 1996-12-25 | 株式会社東芝 | 有色マイクロレンズアレイ及びその製造方法 |
JPH06260621A (ja) * | 1993-03-03 | 1994-09-16 | Hitachi Ltd | カラー固体撮像素子及びその製造方法 |
US5949483A (en) * | 1994-01-28 | 1999-09-07 | California Institute Of Technology | Active pixel sensor array with multiresolution readout |
US5677200A (en) | 1995-05-12 | 1997-10-14 | Lg Semicond Co., Ltd. | Color charge-coupled device and method of manufacturing the same |
JP3393424B2 (ja) | 1995-11-24 | 2003-04-07 | ソニー株式会社 | 固体撮像装置の製造方法及び固体撮像装置 |
JPH09232551A (ja) | 1996-02-26 | 1997-09-05 | Toshiba Corp | 光電変換装置 |
US5734190A (en) | 1996-03-11 | 1998-03-31 | Eastman Kodak Company | Imager having a plurality of cylindrical lenses |
US6137535A (en) * | 1996-11-04 | 2000-10-24 | Eastman Kodak Company | Compact digital camera with segmented fields of view |
US6337713B1 (en) * | 1997-04-04 | 2002-01-08 | Asahi Kogaku Kogyo Kabushiki Kaisha | Processor for image-pixel signals derived from divided sections of image-sensing area of solid-type image sensor |
WO1999002950A1 (en) * | 1997-07-12 | 1999-01-21 | Optical Insights, Llc | Multi-spectral two-dimensional imaging spectrometer |
NO305728B1 (no) * | 1997-11-14 | 1999-07-12 | Reidar E Tangen | Optoelektronisk kamera og fremgangsmÕte ved bildeformatering i samme |
JPH11196332A (ja) | 1997-12-26 | 1999-07-21 | Canon Inc | 固体撮像装置 |
US6271900B1 (en) * | 1998-03-31 | 2001-08-07 | Intel Corporation | Integrated microlens and color filter structure |
TW369726B (en) | 1998-05-04 | 1999-09-11 | United Microelectronics Corp | Structure and producing method of microlens on color filter of sensor device |
TW396645B (en) | 1998-06-16 | 2000-07-01 | United Microelectronics Corp | Manufacturing method of CMOS sensor devices |
US5982497A (en) * | 1998-07-09 | 1999-11-09 | Optical Insights, Llc | Multi-spectral two-dimensional imaging spectrometer |
US6665010B1 (en) * | 1998-07-21 | 2003-12-16 | Intel Corporation | Controlling integration times of pixel sensors |
US6597398B1 (en) * | 1999-06-02 | 2003-07-22 | Intel Corporation | Image sensor response enhancement using fluorescent phosphors |
US6171885B1 (en) * | 1999-10-12 | 2001-01-09 | Taiwan Semiconductor Manufacturing Company | High efficiency color filter process for semiconductor array imaging devices |
US6974236B2 (en) | 2002-02-05 | 2005-12-13 | Canon Kabushiki Kaisha | Illuminating apparatus |
-
2001
- 2001-10-15 US US09/976,096 patent/US7139028B2/en not_active Expired - Fee Related
- 2001-10-16 DE DE60140845T patent/DE60140845D1/de not_active Expired - Lifetime
- 2001-10-16 EP EP01308790A patent/EP1198126B1/de not_active Expired - Lifetime
- 2001-10-16 EP EP03077185A patent/EP1365581B1/de not_active Expired - Lifetime
- 2001-10-17 CN CNB011357673A patent/CN1159904C/zh not_active Expired - Fee Related
- 2001-10-17 CN CNB2004100036264A patent/CN100362665C/zh not_active Expired - Fee Related
- 2001-10-17 KR KR10-2001-0063880A patent/KR100488371B1/ko not_active IP Right Cessation
-
2003
- 2003-09-25 KR KR10-2003-0066464A patent/KR100506440B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN100362665C (zh) | 2008-01-16 |
US7139028B2 (en) | 2006-11-21 |
KR100488371B1 (ko) | 2005-05-11 |
EP1365581B1 (de) | 2013-01-09 |
CN1349120A (zh) | 2002-05-15 |
CN1159904C (zh) | 2004-07-28 |
KR20030082508A (ko) | 2003-10-22 |
KR100506440B1 (ko) | 2005-08-05 |
EP1365581A1 (de) | 2003-11-26 |
EP1198126B1 (de) | 2009-12-23 |
EP1198126A3 (de) | 2003-06-04 |
KR20020030724A (ko) | 2002-04-25 |
US20020051071A1 (en) | 2002-05-02 |
EP1198126A2 (de) | 2002-04-17 |
CN1522057A (zh) | 2004-08-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |