DE60137881D1 - Halbleiterbaustein mit einem elektromagnetischen Geräuschunterdrücker und Verfahren zur Herstellung - Google Patents

Halbleiterbaustein mit einem elektromagnetischen Geräuschunterdrücker und Verfahren zur Herstellung

Info

Publication number
DE60137881D1
DE60137881D1 DE60137881T DE60137881T DE60137881D1 DE 60137881 D1 DE60137881 D1 DE 60137881D1 DE 60137881 T DE60137881 T DE 60137881T DE 60137881 T DE60137881 T DE 60137881T DE 60137881 D1 DE60137881 D1 DE 60137881D1
Authority
DE
Germany
Prior art keywords
manufacture
semiconductor device
electromagnetic noise
noise suppressor
suppressor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60137881T
Other languages
English (en)
Inventor
Shigeyoshi Yoshida
Hiroshi Ono
Yoshio Awakura
Michio Nemoto
Eiji Yamanaka
Masahiro Yamaguchi
Yutaka Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
NEC Tokin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000101895A external-priority patent/JP4271825B2/ja
Priority claimed from JP2000340406A external-priority patent/JP4582893B2/ja
Priority claimed from JP2000342789A external-priority patent/JP4481478B2/ja
Priority claimed from JP2000342835A external-priority patent/JP4191888B2/ja
Application filed by NEC Tokin Corp filed Critical NEC Tokin Corp
Application granted granted Critical
Publication of DE60137881D1 publication Critical patent/DE60137881D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1903—Structure including wave guides
    • H01L2924/19032—Structure including wave guides being a microstrip line type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Magnetic Films (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
DE60137881T 2000-04-04 2001-04-04 Halbleiterbaustein mit einem elektromagnetischen Geräuschunterdrücker und Verfahren zur Herstellung Expired - Lifetime DE60137881D1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000101895A JP4271825B2 (ja) 2000-04-04 2000-04-04 半導体ベアチップおよび半導体ウエーハ
JP2000340406A JP4582893B2 (ja) 2000-11-02 2000-11-02 半導体基板及びその製造方法、並びに該半導体基板を用いた半導体素子
JP2000342789A JP4481478B2 (ja) 2000-11-10 2000-11-10 電磁雑音抑制体およびそれを用いた電磁雑音の抑制方法
JP2000342835A JP4191888B2 (ja) 2000-11-10 2000-11-10 電磁雑音抑制体およびそれを用いた電磁雑音の抑制方法

Publications (1)

Publication Number Publication Date
DE60137881D1 true DE60137881D1 (de) 2009-04-23

Family

ID=27481190

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60137881T Expired - Lifetime DE60137881D1 (de) 2000-04-04 2001-04-04 Halbleiterbaustein mit einem elektromagnetischen Geräuschunterdrücker und Verfahren zur Herstellung

Country Status (8)

Country Link
US (1) US7075163B2 (de)
EP (2) EP1143516B1 (de)
KR (2) KR100844612B1 (de)
CN (1) CN1288753C (de)
DE (1) DE60137881D1 (de)
MY (1) MY131112A (de)
NO (1) NO20011705L (de)
TW (1) TW561607B (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7160636B2 (en) * 2002-09-13 2007-01-09 Nec Tokin Corporation Ferrite thin film, method of manufacturing the same and electromagnetic noise suppressor using the same
DE10248821A1 (de) * 2002-10-19 2004-04-29 Robert Bosch Gmbh Versorgungsleitungsstruktur
DE10325541A1 (de) * 2003-06-04 2005-01-13 Infineon Technologies Ag Elektronisches Bauteil, sowie Halbleiterwafer und Bauteilträger zur Herstellung des Bauteils
US7371471B2 (en) * 2004-03-08 2008-05-13 Nec Tokin Corporation Electromagnetic noise suppressing thin film
US20080014678A1 (en) * 2006-07-14 2008-01-17 Texas Instruments Incorporated System and method of attenuating electromagnetic interference with a grounded top film
US7709934B2 (en) * 2006-12-28 2010-05-04 Intel Corporation Package level noise isolation
US7968978B2 (en) * 2007-06-14 2011-06-28 Raytheon Company Microwave integrated circuit package and method for forming such package
KR100866139B1 (ko) * 2007-06-26 2008-10-31 주식회사 하이닉스반도체 반도체 패키지 및 이의 제조 방법

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3317863A (en) * 1965-05-07 1967-05-02 Bell Telephone Labor Inc Variable ferromagnetic attenuator having a constant phase shift for a range of wave attenuation
US3783499A (en) * 1972-01-24 1974-01-08 Bell Telephone Labor Inc Semiconductor device fabrication using magnetic carrier
US3963489A (en) * 1975-04-30 1976-06-15 Western Electric Company, Inc. Method of precisely aligning pattern-defining masks
JPH0695404B2 (ja) * 1985-12-27 1994-11-24 ソニー株式会社 光磁気記録方法
JPH06244609A (ja) * 1993-02-18 1994-09-02 Tdk Corp 静磁波ｓ／ｎエンハンサ
JPH06244359A (ja) * 1993-02-19 1994-09-02 Takashi Murai 多層チップ
US5373627A (en) 1993-11-23 1994-12-20 Grebe; Kurt R. Method of forming multi-chip module with high density interconnections
US5639989A (en) * 1994-04-19 1997-06-17 Motorola Inc. Shielded electronic component assembly and method for making the same
US5698284A (en) * 1994-09-21 1997-12-16 Dai Nippon Printing Co., Ltd. Optical recording medium
KR0175000B1 (ko) 1994-12-14 1999-02-01 윤종용 전자파 억제구조를 갖는 반도체 소자
JPH0935927A (ja) 1995-07-20 1997-02-07 Tokin Corp 複合磁性体及びそれを用いた電磁干渉抑制体
US6972097B2 (en) * 1995-07-20 2005-12-06 Nec Tokin Corporation Composite magnetic material and electromagnetic interference suppressor member using the same
KR100475768B1 (ko) * 1996-09-03 2005-05-16 엔이씨 도낀 가부시끼가이샤 복합자성시트의제조방법
JPH10128140A (ja) 1996-10-31 1998-05-19 Ishikawajima Harima Heavy Ind Co Ltd 竪型ミル
JPH10270246A (ja) * 1997-03-22 1998-10-09 Res Inst Electric Magnetic Alloys 磁性薄膜
KR100345844B1 (ko) * 1997-07-16 2002-07-24 마츠시타 덴끼 산교 가부시키가이샤 윤활제 조성물 및 자기기록 매체와 자기기록 매체의제조방법
US6069820A (en) * 1998-02-20 2000-05-30 Kabushiki Kaisha Toshiba Spin dependent conduction device
US5998048A (en) * 1998-03-02 1999-12-07 Lucent Technologies Inc. Article comprising anisotropic Co-Fe-Cr-N soft magnetic thin films
US6284363B1 (en) * 1998-03-23 2001-09-04 Fuji Polymer Industries Co., Ltd. Electromagnetic wave absorbing thermoconductive silicone gel molded sheet and method for producing the same
JPH11307983A (ja) * 1998-04-21 1999-11-05 Tokin Corp 電子部品及びその製造方法
US6719615B1 (en) * 2000-10-10 2004-04-13 Beaver Creek Concepts Inc Versatile wafer refining
US6738240B1 (en) * 1999-12-10 2004-05-18 Micron Technology, Inc. Microtransformer for system-on-chip power supply
JP2001210518A (ja) 2000-01-24 2001-08-03 Tokin Corp 磁気損失材料とその製造方法およびそれを用いた高周波電流抑制体
JP2001223493A (ja) * 2000-02-08 2001-08-17 Sony Corp 電波吸収体
CN1324090A (zh) * 2000-04-04 2001-11-28 株式会社东金 光发射元件、等离子体显示面板和阴极射线管显示器件
SG100666A1 (en) * 2000-04-04 2003-12-26 Nec Tokin Corp Wiring board comprising granular magnetic film
US6452253B1 (en) * 2000-08-31 2002-09-17 Micron Technology, Inc. Method and apparatus for magnetic shielding of an integrated circuit
US6515352B1 (en) * 2000-09-25 2003-02-04 Micron Technology, Inc. Shielding arrangement to protect a circuit from stray magnetic fields
US6648990B2 (en) * 2001-03-01 2003-11-18 Hitachi Metals, Ltd. Co-based magnetic alloy and magnetic members made of the same
WO2003078685A1 (fr) * 2002-03-15 2003-09-25 Canon Kabushiki Kaisha Dispositif fonctionnel et procede de fabrication du dispositif, support d'enregistrement magnetique vertical, dispositif d'enregistrement et de lecture magnetique, et dispositif de traitement d'information

Also Published As

Publication number Publication date
EP1143516B1 (de) 2009-03-11
CN1316777A (zh) 2001-10-10
KR100908356B1 (ko) 2009-07-20
EP2028690A2 (de) 2009-02-25
NO20011705L (no) 2001-10-05
KR20010095323A (ko) 2001-11-03
TW561607B (en) 2003-11-11
EP1143516A3 (de) 2003-02-19
NO20011705D0 (no) 2001-04-04
MY131112A (en) 2007-07-31
CN1288753C (zh) 2006-12-06
US7075163B2 (en) 2006-07-11
US20020030249A1 (en) 2002-03-14
KR100844612B1 (ko) 2008-07-07
EP2028690A3 (de) 2011-02-09
EP1143516A2 (de) 2001-10-10
KR20080005476A (ko) 2008-01-14

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Legal Events

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