DE60112236D1 - Thermisches verschiebungselement und strahlungsdetektor, der dieses verwendet - Google Patents

Thermisches verschiebungselement und strahlungsdetektor, der dieses verwendet

Info

Publication number
DE60112236D1
DE60112236D1 DE60112236T DE60112236T DE60112236D1 DE 60112236 D1 DE60112236 D1 DE 60112236D1 DE 60112236 T DE60112236 T DE 60112236T DE 60112236 T DE60112236 T DE 60112236T DE 60112236 D1 DE60112236 D1 DE 60112236D1
Authority
DE
Germany
Prior art keywords
radiation detector
shifting element
thermal shifting
thermal
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60112236T
Other languages
English (en)
Other versions
DE60112236T2 (de
Inventor
Tohru Ishizuya
Junji Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of DE60112236D1 publication Critical patent/DE60112236D1/de
Application granted granted Critical
Publication of DE60112236T2 publication Critical patent/DE60112236T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0081—Thermal properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/38—Radiation pyrometry, e.g. infrared or optical thermometry using extension or expansion of solids or fluids
    • G01J5/40—Radiation pyrometry, e.g. infrared or optical thermometry using extension or expansion of solids or fluids using bimaterial elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H01L27/14818—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14875—Infrared CCD or CID imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/11—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths for generating image signals from visible and infrared light wavelengths
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0278—Temperature sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/04—Optical MEMS
    • B81B2201/042—Micromirrors, not used as optical switches
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0109—Bridges

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thermal Sciences (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
DE60112236T 2000-09-05 2001-09-03 Thermisches Verschiebungselement und Strahlungsdetektor, der dieses verwendet Expired - Lifetime DE60112236T2 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2000268839 2000-09-05
JP2000268839 2000-09-05
JP2001187945 2001-06-21
JP2001187945 2001-06-21
JP2001234569A JP4945861B2 (ja) 2000-09-05 2001-08-02 熱型変位素子及びこれを用いた放射検出装置
JP2001234569 2001-08-02
PCT/JP2001/007608 WO2002021086A1 (fr) 2000-09-05 2001-09-03 Element a deplacement thermique et radiometre l'utilisant

Publications (2)

Publication Number Publication Date
DE60112236D1 true DE60112236D1 (de) 2005-09-01
DE60112236T2 DE60112236T2 (de) 2006-04-13

Family

ID=27344548

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60112236T Expired - Lifetime DE60112236T2 (de) 2000-09-05 2001-09-03 Thermisches Verschiebungselement und Strahlungsdetektor, der dieses verwendet

Country Status (7)

Country Link
US (1) US6835932B2 (de)
EP (1) EP1227307B1 (de)
JP (1) JP4945861B2 (de)
KR (1) KR100780999B1 (de)
CN (1) CN1392951A (de)
DE (1) DE60112236T2 (de)
WO (1) WO2002021086A1 (de)

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JP2004126503A (ja) * 2002-03-28 2004-04-22 Nikon Corp マイクロアクチュエータ及びこれを用いた光スイッチ
JP4300766B2 (ja) * 2002-08-01 2009-07-22 株式会社ニコン 立体構造素子およびその製造方法、光スイッチ、マイクロデバイス
TWI289708B (en) * 2002-12-25 2007-11-11 Qualcomm Mems Technologies Inc Optical interference type color display
US7342705B2 (en) 2004-02-03 2008-03-11 Idc, Llc Spatial light modulator with integrated optical compensation structure
US7630123B2 (en) 2004-09-27 2009-12-08 Qualcomm Mems Technologies, Inc. Method and device for compensating for color shift as a function of angle of view
DE502005009449D1 (de) * 2004-10-07 2010-06-02 Auer Lighting Gmbh Metallreflektor und Verfahren zu dessen Herstellung
DE102005028456A1 (de) * 2005-06-17 2006-12-28 Schott Ag Metallreflektor und Verfahren zu dessen Herstellung
US20060158484A1 (en) * 2005-01-14 2006-07-20 Greywall Dennis S Thermal actuator for a MEMS device
US8624187B2 (en) 2005-08-22 2014-01-07 Hakan Urey Imaging detector array with optical readout
US7652250B2 (en) * 2006-06-26 2010-01-26 Matthew Erdtmann Noise reduction method for imaging devices
EP2366944A1 (de) 2006-10-06 2011-09-21 Qualcomm Mems Technologies, Inc. Beleuchtungseinrichtung einer Anzeigevorrichtung mit darin integrierter Struktur zur Erzeugung optischer Verluste
EP1943551A2 (de) 2006-10-06 2008-07-16 Qualcomm Mems Technologies, Inc. Lichtführung
US7741603B2 (en) * 2007-03-20 2010-06-22 Agiltron, Inc. Microcantilever infrared sensor array
US7755049B2 (en) * 2007-03-20 2010-07-13 Agiltron, Inc. Tunable microcantilever infrared sensor
US7580175B2 (en) * 2007-06-21 2009-08-25 Alcatel-Lucent Usa Inc. Detector of infrared radiation having a bi-material transducer
US7851759B2 (en) 2007-06-21 2010-12-14 Alcatel-Lucent Usa Inc. Infrared imaging apparatus
US7825381B2 (en) * 2007-06-29 2010-11-02 Agiltron, Inc. Micromechanical device for infrared sensing
US8068710B2 (en) 2007-12-07 2011-11-29 Qualcomm Mems Technologies, Inc. Decoupled holographic film and diffuser
DE102008001663B4 (de) * 2008-05-08 2017-11-02 Robert Bosch Gmbh Mikromechanisches Bauteil und Herstellungsverfahren für ein mikromechanisches Bauteil
US7842923B2 (en) * 2008-07-28 2010-11-30 Alcatel-Lucent Usa Inc. Thermal actuator for an infrared sensor
US20110139990A1 (en) * 2008-09-04 2011-06-16 University Of Florida Research Foundation, Inc. Mems-based ftir spectrometer
JP2010078449A (ja) * 2008-09-25 2010-04-08 Toshiba Corp 赤外線撮像素子及びその製造方法
US8440973B1 (en) * 2009-03-05 2013-05-14 University Of Puerto Rico Bimorph cantilever arrangement and applications thereof
US8835861B1 (en) * 2010-03-05 2014-09-16 University Of Puerto Rico Microactuators based on insulator-to-metal transition materials and method of using the same
JP6336904B2 (ja) 2011-08-17 2018-06-06 デジタルダイレクト・アイアール、インク 撮像システム用受動型検出装置
US9851256B2 (en) 2014-06-26 2017-12-26 MP High Tech Solutions Pty Ltd Apparatus and method for electromagnetic radiation sensing
US9810581B1 (en) * 2014-07-28 2017-11-07 MP High Tech Solutions Pty Ltd Micromechanical device for electromagnetic radiation sensing
US9857229B1 (en) 2015-06-24 2018-01-02 MP High Tech Solutions Pty Ltd Fabrication method for micromechanical sensors
US10222265B2 (en) * 2016-08-19 2019-03-05 Obsidian Sensors, Inc. Thermomechanical device for measuring electromagnetic radiation
JP7027960B2 (ja) * 2018-02-28 2022-03-02 株式会社リコー 可動回析格子及び分光装置及び光スイッチ及び画像表示装置
WO2023224955A1 (en) * 2022-05-18 2023-11-23 ams Sensors USA Inc. Imaging device and method of multi-spectral imaging

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JPS6420640A (en) * 1987-07-15 1989-01-24 Toshiba Corp Semiconductor device and manufacture thereof
JPS6420640U (de) * 1987-07-28 1989-02-01
JPH02196457A (ja) 1989-01-25 1990-08-03 Nec Corp 半導体集積回路
BE1008927A3 (nl) 1994-11-18 1996-10-01 Imec Inter Uni Micro Electr Stralingsgevoelige detector.
JPH08193881A (ja) 1995-01-11 1996-07-30 Honda Motor Co Ltd 赤外線検出装置
JP3229984B2 (ja) 1995-01-13 2001-11-19 株式会社ニコン 静電容量による赤外線検出方法及び赤外線センサ及び赤外線撮像装置
US5777328A (en) * 1995-07-21 1998-07-07 Texas Instruments Incorporated Ramped foot support
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US5929440A (en) 1996-10-25 1999-07-27 Hypres, Inc. Electromagnetic radiation detector
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US6080988A (en) * 1996-12-20 2000-06-27 Nikon Corporation Optically readable radiation-displacement-conversion devices and methods, and image-rendering apparatus and methods employing same
JPH10253447A (ja) 1997-01-08 1998-09-25 Nikon Corp 光読み出し型放射−変位変換装置及びその製造方法、放射検出方法及び装置、並びにこれを用いた映像化方法及び装置
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JP3554483B2 (ja) * 1998-04-22 2004-08-18 シャープ株式会社 Ｃｍｏｓ型固体撮像装置
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JP3417855B2 (ja) * 1998-11-05 2003-06-16 株式会社日立製作所 赤外センサ
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JP2000221081A (ja) * 1999-02-03 2000-08-11 Nikon Corp 熱型変位素子及びこれを用いた放射検出装置
JP4051830B2 (ja) 1999-07-27 2008-02-27 株式会社ニコン 放射検出装置
JP4538862B2 (ja) 1999-05-14 2010-09-08 株式会社ニコン 熱型変位素子及び放射検出装置
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Also Published As

Publication number Publication date
KR100780999B1 (ko) 2007-11-29
CN1392951A (zh) 2003-01-22
US20020153486A1 (en) 2002-10-24
KR20020060723A (ko) 2002-07-18
EP1227307B1 (de) 2005-07-27
JP2003075259A (ja) 2003-03-12
DE60112236T2 (de) 2006-04-13
US6835932B2 (en) 2004-12-28
WO2002021086A1 (fr) 2002-03-14
EP1227307A1 (de) 2002-07-31
JP4945861B2 (ja) 2012-06-06
EP1227307A4 (de) 2004-03-03

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