DE60100741D1 - Spannungserhöhung-klemmschaltung für einen flash speicher - Google Patents

Spannungserhöhung-klemmschaltung für einen flash speicher

Info

Publication number
DE60100741D1
DE60100741D1 DE60100741T DE60100741T DE60100741D1 DE 60100741 D1 DE60100741 D1 DE 60100741D1 DE 60100741 T DE60100741 T DE 60100741T DE 60100741 T DE60100741 T DE 60100741T DE 60100741 D1 DE60100741 D1 DE 60100741D1
Authority
DE
Germany
Prior art keywords
flash memory
boosting
circuit
voltage
voltage clamp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60100741T
Other languages
English (en)
Other versions
DE60100741T2 (de
Inventor
Takao Akaogi
K Al-Shamma
Edward Cleveland
Yong Kim
Jin-Lien Lin
Tang Teh
Kendra Nguyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spansion LLC
Original Assignee
Fujitsu Ltd
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Advanced Micro Devices Inc filed Critical Fujitsu Ltd
Publication of DE60100741D1 publication Critical patent/DE60100741D1/de
Application granted granted Critical
Publication of DE60100741T2 publication Critical patent/DE60100741T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
DE60100741T 2000-02-07 2001-02-05 Spannungserhöhung-klemmschaltung für einen flash speicher Expired - Lifetime DE60100741T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US18063800P 2000-02-07 2000-02-07
US180638P 2000-02-07
US09/595,519 US6351420B1 (en) 2000-02-07 2000-06-16 Voltage boost level clamping circuit for a flash memory
US595519 2000-06-16
PCT/US2001/040031 WO2001057874A2 (en) 2000-02-07 2001-02-05 Voltage boost level clamping circuit for a flash memory

Publications (2)

Publication Number Publication Date
DE60100741D1 true DE60100741D1 (de) 2003-10-16
DE60100741T2 DE60100741T2 (de) 2004-07-01

Family

ID=26876525

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60100741T Expired - Lifetime DE60100741T2 (de) 2000-02-07 2001-02-05 Spannungserhöhung-klemmschaltung für einen flash speicher

Country Status (9)

Country Link
US (1) US6351420B1 (de)
EP (1) EP1254459B1 (de)
JP (1) JP4744761B2 (de)
KR (1) KR100725648B1 (de)
CN (1) CN1280827C (de)
AT (1) ATE249674T1 (de)
DE (1) DE60100741T2 (de)
TW (1) TW516031B (de)
WO (1) WO2001057874A2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003257187A (ja) * 2002-02-28 2003-09-12 Hitachi Ltd 不揮発性メモリ、ｉｃカード及びデータ処理装置
KR100474196B1 (ko) * 2002-07-18 2005-03-10 주식회사 하이닉스반도체 클램프 회로 및 이를 이용한 부스팅 회로
US7227804B1 (en) * 2004-04-19 2007-06-05 Cypress Semiconductor Corporation Current source architecture for memory device standby current reduction
CN100377037C (zh) * 2005-06-13 2008-03-26 鸿富锦精密工业（深圳）有限公司 内存电压信号产生电路
KR100875012B1 (ko) * 2007-07-25 2008-12-19 주식회사 하이닉스반도체 전압 제공 회로와 이를 구비하는 플래시 메모리 소자 및동작 전압 제공 방법
CN103138248B (zh) * 2011-12-02 2016-02-24 赛普拉斯半导体公司 用于从负载电容电路释放电压的系统和方法
TWI475565B (zh) * 2012-09-06 2015-03-01 Univ Nat Chiao Tung 靜態隨機存取記憶體的控制電路及其操作方法
US10467869B2 (en) * 2017-07-30 2019-11-05 Immersion Corporation Apparatus and method for providing boost protection logic
WO2020183259A1 (en) 2019-03-11 2020-09-17 3M Innovative Properties Company Coextruded polymeric nettings and method of making the same

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4482985A (en) 1981-04-17 1984-11-13 Hitachi, Ltd. Semiconductor integrated circuit
USRE35313E (en) 1981-04-17 1996-08-13 Hitachi, Ltd. Semiconductor integrated circuit with voltage limiter having different output ranges from normal operation and performing of aging tests
JP2805973B2 (ja) * 1990-05-11 1998-09-30 日本電気株式会社 ブートストラップ回路
JP2838344B2 (ja) 1992-10-28 1998-12-16 三菱電機株式会社 半導体装置
JP3161052B2 (ja) * 1992-07-10 2001-04-25 富士通株式会社 不揮発性半導体記憶装置
JP2831914B2 (ja) * 1992-09-30 1998-12-02 株式会社東芝 半導体集積回路装置
US5530640A (en) 1992-10-13 1996-06-25 Mitsubishi Denki Kabushiki Kaisha IC substrate and boosted voltage generation circuits
JP2740626B2 (ja) * 1992-10-13 1998-04-15 三菱電機株式会社 電圧発生回路
JPH0778469A (ja) * 1993-09-08 1995-03-20 Nec Ic Microcomput Syst Ltd 半導体メモリ
JP2738335B2 (ja) * 1995-04-20 1998-04-08 日本電気株式会社 昇圧回路
JP3536515B2 (ja) * 1996-03-21 2004-06-14 ソニー株式会社 半導体記憶装置
EP0814481B1 (de) * 1996-06-18 2002-03-20 STMicroelectronics S.r.l. Nichtflüchtige Speicheranordnung mit niedriger Versorgungsspannung und Spannungserhöher
KR100480555B1 (ko) * 1997-06-17 2005-06-13 삼성전자주식회사 반도체메모리장치의승압전압클램프회로및승압전압클램프방법
US6052020A (en) * 1997-09-10 2000-04-18 Intel Corporation Low supply voltage sub-bandgap reference
US6134146A (en) 1998-10-05 2000-10-17 Advanced Micro Devices Wordline driver for flash electrically erasable programmable read-only memory (EEPROM)
JP3293577B2 (ja) * 1998-12-15 2002-06-17 日本電気株式会社 チャージポンプ回路、昇圧回路及び半導体記憶装置
JP3753898B2 (ja) * 1999-07-19 2006-03-08 富士通株式会社 半導体記憶装置の昇圧回路

Also Published As

Publication number Publication date
WO2001057874A3 (en) 2002-04-18
US6351420B1 (en) 2002-02-26
ATE249674T1 (de) 2003-09-15
DE60100741T2 (de) 2004-07-01
JP4744761B2 (ja) 2011-08-10
WO2001057874A2 (en) 2001-08-09
EP1254459A2 (de) 2002-11-06
TW516031B (en) 2003-01-01
CN1398405A (zh) 2003-02-19
JP2003522366A (ja) 2003-07-22
KR20030014350A (ko) 2003-02-17
EP1254459B1 (de) 2003-09-10
CN1280827C (zh) 2006-10-18
KR100725648B1 (ko) 2007-06-08

Similar Documents

Publication Publication Date Title
TW366491B (en) Semiconductor IC and the microcomputer
DE60100741D1 (de) Spannungserhöhung-klemmschaltung für einen flash speicher
WO2005057586A3 (en) Nand memory array incorporating multiple series selection devices and method for operation of same
WO2003063168A3 (en) Source side sensing scheme for virtual ground read of flash eprom array with adjacent bit precharge
JP2001338493A5 (de)
IT1296486B1 (it) Regolatore di tensione per circuiti di memoria a singola tensione di alimentazione, in particolare per memorie di tipo flash.
SG134992A1 (en) A new design concept for sram read margin
TW281766B (en) A fast 3-state booster circuit
ES447132A1 (es) Perfeccionamientos introducidos en un circuito binario de conmutacion.
WO2007078885A3 (en) Multi-level memory cell sensing
TWI257106B (en) Device with adjustable supply voltage
DK0806045T3 (da) Dekodet ordlinje-driver med positive og negative spændingstilstande
GB2438128A (en) Current sensing circuit with a current-compensated drain voltage regulation
WO2002045090A3 (de) Schaltungsanordnung zum zerstörungsfreien, selbstnormierenden auslesen von mram-speicherzellen
EP0862181A3 (de) Statische Halbleiterspeicheranordnung mit Zeitgeberschaltung
ATE252762T1 (de) Wortleitungstreiber für flash speicher in lesemodus
DE60003451D1 (de) Wortleitungssignale einer flashspeicher bleiben überall auf dem chip verlustfrei
WO2002019335A3 (en) Word line decoding architecture in a flash memory
TW200506954A (en) Electronic memory, such as flash EPROM, with bitwise-adjusted writing current or/and voltage
CA2430875A1 (en) Ferroelectric memory supplying predetermined amount of direct-current bias electricity to first and second bit lines upon reading data from memory cell
CA2258957A1 (en) A memory device having a power supply-independent low power consumption bit line voltage clamp
NO20025749D0 (no) Laveffekts spenningsregulatorkrets til bruk i en integrert kretsanordning
DE60226100D1 (de) Bitzeilen-Selektions-Dekodierung und Schaltung für Doppelbitspeicher mit Doppelbitselektion
JPS5443633A (en) Memory erasing method
KR960042758A (ko) 낸드형 플래쉬 메모리의 리드전압 인가 방법

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU LTD., KAWASAKI, KANAGAWA, JP

Owner name: SPANSION LLC ((N.D.GES.D. STAATES DELAWARE), SUNNY

8327 Change in the person/name/address of the patent owner

Owner name: SPANSION LLC (N.D.GES.D. STAATES DELAWARE), SUNNYV