DE60036179D1 - Herstellung eines dielektrischen Siliziumoxidmaterials mit kleiner Dielektrizitätskonstante bei gleichzeitiger Unterdrückung von Druckspitzen und einer Erhöhung der Dielektrizitätskonstante - Google Patents
Herstellung eines dielektrischen Siliziumoxidmaterials mit kleiner Dielektrizitätskonstante bei gleichzeitiger Unterdrückung von Druckspitzen und einer Erhöhung der DielektrizitätskonstanteInfo
- Publication number
- DE60036179D1 DE60036179D1 DE60036179T DE60036179T DE60036179D1 DE 60036179 D1 DE60036179 D1 DE 60036179D1 DE 60036179 T DE60036179 T DE 60036179T DE 60036179 T DE60036179 T DE 60036179T DE 60036179 D1 DE60036179 D1 DE 60036179D1
- Authority
- DE
- Germany
- Prior art keywords
- dielectric constant
- increasing
- preparation
- silicon oxide
- oxide material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 229910052814 silicon oxide Inorganic materials 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31633—Deposition of carbon doped silicon oxide, e.g. SiOC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/438,642 US6147012A (en) | 1999-11-12 | 1999-11-12 | Process for forming low k silicon oxide dielectric material while suppressing pressure spiking and inhibiting increase in dielectric constant |
US438642 | 1999-11-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60036179D1 true DE60036179D1 (de) | 2007-10-11 |
DE60036179T2 DE60036179T2 (de) | 2008-05-21 |
Family
ID=23741429
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60036179T Expired - Lifetime DE60036179T2 (de) | 1999-11-12 | 2000-11-08 | Herstellung eines dielektrischen Siliziumoxidmaterials mit kleiner Dielektrizitätskonstante bei gleichzeitiger Unterdrückung von Druckspitzen und einer Erhöhung der Dielektrizitätskonstante |
Country Status (4)
Country | Link |
---|---|
US (1) | US6147012A (de) |
EP (1) | EP1100121B1 (de) |
JP (1) | JP2001210639A (de) |
DE (1) | DE60036179T2 (de) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6159871A (en) * | 1998-05-29 | 2000-12-12 | Dow Corning Corporation | Method for producing hydrogenated silicon oxycarbide films having low dielectric constant |
US6667553B2 (en) * | 1998-05-29 | 2003-12-23 | Dow Corning Corporation | H:SiOC coated substrates |
JP4270632B2 (ja) * | 1999-03-12 | 2009-06-03 | 株式会社東芝 | ドライエッチングを用いた半導体装置の製造方法 |
US6524974B1 (en) | 1999-03-22 | 2003-02-25 | Lsi Logic Corporation | Formation of improved low dielectric constant carbon-containing silicon oxide dielectric material by reaction of carbon-containing silane with oxidizing agent in the presence of one or more reaction retardants |
US6423628B1 (en) | 1999-10-22 | 2002-07-23 | Lsi Logic Corporation | Method of forming integrated circuit structure having low dielectric constant material and having silicon oxynitride caps over closely spaced apart metal lines |
US6391795B1 (en) | 1999-10-22 | 2002-05-21 | Lsi Logic Corporation | Low k dielectric composite layer for intergrated circuit structure which provides void-free low k dielectric material between metal lines while mitigating via poisoning |
US6756674B1 (en) | 1999-10-22 | 2004-06-29 | Lsi Logic Corporation | Low dielectric constant silicon oxide-based dielectric layer for integrated circuit structures having improved compatibility with via filler materials, and method of making same |
US6316354B1 (en) | 1999-10-26 | 2001-11-13 | Lsi Logic Corporation | Process for removing resist mask of integrated circuit structure which mitigates damage to underlying low dielectric constant silicon oxide dielectric layer |
US6346490B1 (en) | 2000-04-05 | 2002-02-12 | Lsi Logic Corporation | Process for treating damaged surfaces of low k carbon doped silicon oxide dielectric material after plasma etching and plasma cleaning steps |
US6506678B1 (en) | 2000-05-19 | 2003-01-14 | Lsi Logic Corporation | Integrated circuit structures having low k porous aluminum oxide dielectric material separating aluminum lines, and method of making same |
US6365528B1 (en) | 2000-06-07 | 2002-04-02 | Lsi Logic Corporation | Low temperature process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric-material characterized by improved resistance to oxidation and good gap-filling capabilities |
US6346488B1 (en) | 2000-06-27 | 2002-02-12 | Lsi Logic Corporation | Process to provide enhanced resistance to cracking and to further reduce the dielectric constant of a low dielectric constant dielectric film of an integrated circuit structure by implantation with hydrogen ions |
US6492731B1 (en) | 2000-06-27 | 2002-12-10 | Lsi Logic Corporation | Composite low dielectric constant film for integrated circuit structure |
US6350700B1 (en) | 2000-06-28 | 2002-02-26 | Lsi Logic Corporation | Process for forming trenches and vias in layers of low dielectric constant carbon-doped silicon oxide dielectric material of an integrated circuit structure |
US6368979B1 (en) | 2000-06-28 | 2002-04-09 | Lsi Logic Corporation | Process for forming trenches and vias in layers of low dielectric constant carbon-doped silicon oxide dielectric material of an integrated circuit structure |
US6489242B1 (en) | 2000-09-13 | 2002-12-03 | Lsi Logic Corporation | Process for planarization of integrated circuit structure which inhibits cracking of low dielectric constant dielectric material adjacent underlying raised structures |
US6391768B1 (en) | 2000-10-30 | 2002-05-21 | Lsi Logic Corporation | Process for CMP removal of excess trench or via filler metal which inhibits formation of concave regions on oxide surface of integrated circuit structure |
US6537923B1 (en) | 2000-10-31 | 2003-03-25 | Lsi Logic Corporation | Process for forming integrated circuit structure with low dielectric constant material between closely spaced apart metal lines |
US6423630B1 (en) | 2000-10-31 | 2002-07-23 | Lsi Logic Corporation | Process for forming low K dielectric material between metal lines |
US6420277B1 (en) * | 2000-11-01 | 2002-07-16 | Lsi Logic Corporation | Process for inhibiting crack formation in low dielectric constant dielectric films of integrated circuit structure |
US6649219B2 (en) | 2001-02-23 | 2003-11-18 | Lsi Logic Corporation | Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation |
US6572925B2 (en) | 2001-02-23 | 2003-06-03 | Lsi Logic Corporation | Process for forming a low dielectric constant fluorine and carbon containing silicon oxide dielectric material |
US6858195B2 (en) | 2001-02-23 | 2005-02-22 | Lsi Logic Corporation | Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material |
US6503840B2 (en) | 2001-05-02 | 2003-01-07 | Lsi Logic Corporation | Process for forming metal-filled openings in low dielectric constant dielectric material while inhibiting via poisoning |
US6559048B1 (en) | 2001-05-30 | 2003-05-06 | Lsi Logic Corporation | Method of making a sloped sidewall via for integrated circuit structure to suppress via poisoning |
US6562700B1 (en) | 2001-05-31 | 2003-05-13 | Lsi Logic Corporation | Process for removal of resist mask over low k carbon-doped silicon oxide dielectric material of an integrated circuit structure, and removal of residues from via etch and resist mask removal |
US6583026B1 (en) | 2001-05-31 | 2003-06-24 | Lsi Logic Corporation | Process for forming a low k carbon-doped silicon oxide dielectric material on an integrated circuit structure |
US6566171B1 (en) * | 2001-06-12 | 2003-05-20 | Lsi Logic Corporation | Fuse construction for integrated circuit structure having low dielectric constant dielectric material |
US6930056B1 (en) | 2001-06-19 | 2005-08-16 | Lsi Logic Corporation | Plasma treatment of low dielectric constant dielectric material to form structures useful in formation of metal interconnects and/or filled vias for integrated circuit structure |
US6559033B1 (en) | 2001-06-27 | 2003-05-06 | Lsi Logic Corporation | Processing for forming integrated circuit structure with low dielectric constant material between closely spaced apart metal lines |
US6673721B1 (en) | 2001-07-02 | 2004-01-06 | Lsi Logic Corporation | Process for removal of photoresist mask used for making vias in low k carbon-doped silicon oxide dielectric material, and for removal of etch residues from formation of vias and removal of photoresist mask |
US6723653B1 (en) | 2001-08-17 | 2004-04-20 | Lsi Logic Corporation | Process for reducing defects in copper-filled vias and/or trenches formed in porous low-k dielectric material |
US6881664B2 (en) * | 2001-08-28 | 2005-04-19 | Lsi Logic Corporation | Process for planarizing upper surface of damascene wiring structure for integrated circuit structures |
US6613665B1 (en) | 2001-10-26 | 2003-09-02 | Lsi Logic Corporation | Process for forming integrated circuit structure comprising layer of low k dielectric material having antireflective properties in an upper surface |
US6528423B1 (en) | 2001-10-26 | 2003-03-04 | Lsi Logic Corporation | Process for forming composite of barrier layers of dielectric material to inhibit migration of copper from copper metal interconnect of integrated circuit structure into adjacent layer of low k dielectric material |
DE10154346C2 (de) * | 2001-11-06 | 2003-11-20 | Infineon Technologies Ag | Ausffüllen von Substratvertiefungen mit siliziumoxidhaltigem Material durch eine HDP-Gasphasenabscheidung unter Beteiligung von H¶2¶O¶2¶ oder H¶2¶O als Reaktionsgas |
US6914014B2 (en) * | 2003-01-13 | 2005-07-05 | Applied Materials, Inc. | Method for curing low dielectric constant film using direct current bias |
US8889567B2 (en) | 2011-09-16 | 2014-11-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and methods for low K dielectric layers |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3012861A (en) * | 1960-01-15 | 1961-12-12 | Du Pont | Production of silicon |
US3178392A (en) * | 1962-04-09 | 1965-04-13 | Rohm & Haas | Heterocyclic and linear siliconmethylene and polysiloxane compounds containing siliconmethylene units and their preparation |
US3920865A (en) * | 1969-03-29 | 1975-11-18 | Degussa | Process of hydrophorizing highly dispersed metal or metalloid oxides |
US3832202A (en) * | 1972-08-08 | 1974-08-27 | Motorola Inc | Liquid silica source for semiconductors liquid silica source for semiconductors |
US4705725A (en) * | 1986-11-28 | 1987-11-10 | E. I. Du Pont De Nemours And Company | Substrates with sterically-protected, stable, covalently-bonded organo-silane films |
JP2874297B2 (ja) * | 1989-12-18 | 1999-03-24 | 東ソー株式会社 | 逆相クロマトグラフィー用充填剤及びその製造方法 |
EP0731982B1 (de) * | 1992-07-04 | 1999-12-01 | Trikon Equipments Limited | Behandlungsverfahren für eine halbleiterscheibe. |
US5882489A (en) * | 1996-04-26 | 1999-03-16 | Ulvac Technologies, Inc. | Processes for cleaning and stripping photoresist from surfaces of semiconductor wafers |
US5858879A (en) * | 1997-06-06 | 1999-01-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for etching metal lines with enhanced profile control |
US5904154A (en) * | 1997-07-24 | 1999-05-18 | Vanguard International Semiconductor Corporation | Method for removing fluorinated photoresist layers from semiconductor substrates |
US5874745A (en) * | 1997-08-05 | 1999-02-23 | International Business Machines Corporation | Thin film transistor with carbonaceous gate dielectric |
GB9801359D0 (en) * | 1998-01-23 | 1998-03-18 | Poulton Limited | Methods and apparatus for treating a substrate |
GB9801655D0 (en) * | 1998-01-28 | 1998-03-25 | Trikon Equip Ltd | Method and apparatus for treating a substrate |
US6054379A (en) * | 1998-02-11 | 2000-04-25 | Applied Materials, Inc. | Method of depositing a low k dielectric with organo silane |
JP3562357B2 (ja) * | 1998-12-22 | 2004-09-08 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
-
1999
- 1999-11-12 US US09/438,642 patent/US6147012A/en not_active Expired - Lifetime
-
2000
- 2000-11-08 DE DE60036179T patent/DE60036179T2/de not_active Expired - Lifetime
- 2000-11-08 EP EP00124410A patent/EP1100121B1/de not_active Expired - Lifetime
- 2000-11-13 JP JP2000345140A patent/JP2001210639A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1100121A2 (de) | 2001-05-16 |
US6147012A (en) | 2000-11-14 |
EP1100121A3 (de) | 2004-04-14 |
EP1100121B1 (de) | 2007-08-29 |
DE60036179T2 (de) | 2008-05-21 |
JP2001210639A (ja) | 2001-08-03 |
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