DE60015479D1 - Verfahren zur Herstellung eines Verbundpartikels für chemisch-mechanisches Polieren - Google Patents

Verfahren zur Herstellung eines Verbundpartikels für chemisch-mechanisches Polieren

Info

Publication number
DE60015479D1
DE60015479D1 DE60015479T DE60015479T DE60015479D1 DE 60015479 D1 DE60015479 D1 DE 60015479D1 DE 60015479 T DE60015479 T DE 60015479T DE 60015479 T DE60015479 T DE 60015479T DE 60015479 D1 DE60015479 D1 DE 60015479D1
Authority
DE
Germany
Prior art keywords
producing
process
mechanical polishing
chemical mechanical
composite particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE60015479T
Other languages
English (en)
Other versions
DE60015479T2 (de
Inventor
Kazuo Nishimoto
Masayuki Hattori
Nobuo Kawahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP33150599 priority Critical
Priority to JP33150499 priority
Priority to JP33150499A priority patent/JP4151178B2/ja
Priority to JP33150599A priority patent/JP4151179B2/ja
Application filed by JSR Corp filed Critical JSR Corp
Publication of DE60015479D1 publication Critical patent/DE60015479D1/de
Application granted granted Critical
Publication of DE60015479T2 publication Critical patent/DE60015479T2/de
Application status is Active legal-status Critical
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G
    • C08J3/00Processes of treating or compounding macromolecular substances
    • C08J3/12Powdering or granulating
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G
    • C08J3/00Processes of treating or compounding macromolecular substances
    • C08J3/20Compounding polymers with additives, e.g. colouring
    • C08J3/205Compounding polymers with additives, e.g. colouring in the presence of a continuous liquid phase
    • C08J3/21Compounding polymers with additives, e.g. colouring in the presence of a continuous liquid phase the polymer being premixed with a liquid phase
    • C08J3/215Compounding polymers with additives, e.g. colouring in the presence of a continuous liquid phase the polymer being premixed with a liquid phase at least one additive being also premixed with a liquid phase
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1436Composite particles, e.g. coated particles
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1436Composite particles, e.g. coated particles
    • C09K3/1445Composite particles, e.g. coated particles the coating consisting exclusively of metals
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3105After-treatment
    • H01L21/31058After-treatment of organic layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00Specific properties of additives
    • C08K2201/013Additives applied to the surface of polymers or polymer particles
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/29Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991Coated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/29Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991Coated
    • Y10T428/2993Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]
    • Y10T428/2995Silane, siloxane or silicone coating
DE2000615479 1999-11-22 2000-11-21 Verfahren zur Herstellung eines Verbundpartikels für chemisch-mechanisches Polieren Active DE60015479T2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP33150599 1999-11-22
JP33150499 1999-11-22
JP33150499A JP4151178B2 (ja) 1999-11-22 1999-11-22 化学機械研磨用水系分散体の製造方法
JP33150599A JP4151179B2 (ja) 1999-11-22 1999-11-22 複合粒子の製造方法及びこの方法により製造される複合粒子並びに複合粒子を含有する化学機械研磨用水系分散体

Publications (2)

Publication Number Publication Date
DE60015479D1 true DE60015479D1 (de) 2004-12-09
DE60015479T2 DE60015479T2 (de) 2005-10-27

Family

ID=26573873

Family Applications (2)

Application Number Title Priority Date Filing Date
DE2000625959 Active DE60025959T2 (de) 1999-11-22 2000-11-21 Verbundpartikel und wässrige Dispersionen für chemisch-mechanisches Polieren
DE2000615479 Active DE60015479T2 (de) 1999-11-22 2000-11-21 Verfahren zur Herstellung eines Verbundpartikels für chemisch-mechanisches Polieren

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE2000625959 Active DE60025959T2 (de) 1999-11-22 2000-11-21 Verbundpartikel und wässrige Dispersionen für chemisch-mechanisches Polieren

Country Status (5)

Country Link
US (1) US6582761B1 (de)
EP (2) EP1243611B1 (de)
KR (1) KR100444239B1 (de)
DE (2) DE60025959T2 (de)
TW (1) TW534917B (de)

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US6592980B1 (en) * 1999-12-07 2003-07-15 Air Products And Chemicals, Inc. Mesoporous films having reduced dielectric constants
JP2001269859A (ja) 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
JP4078787B2 (ja) * 2000-03-31 2008-04-23 Jsr株式会社 化学機械研磨用水系分散体
JP4123685B2 (ja) * 2000-05-18 2008-07-23 Jsr株式会社 化学機械研磨用水系分散体
EP1356502A1 (de) * 2001-01-16 2003-10-29 Cabot Microelectronics Corporation Ammoniumoxalat enthaltendes poliersystem und dessen verfahren
US20030032681A1 (en) * 2001-05-18 2003-02-13 The Regents Of The University Of Clifornia Super-hydrophobic fluorine containing aerogels
TWI242580B (en) * 2001-08-29 2005-11-01 Nippon Catalytic Chem Ind Amino resin composite particle and method of producing same
US6589100B2 (en) 2001-09-24 2003-07-08 Cabot Microelectronics Corporation Rare earth salt/oxidizer-based CMP method
US6817927B2 (en) 2001-10-19 2004-11-16 Eastman Kodak Company Method of removing material from an external surface using core/shell particles
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US6620215B2 (en) * 2001-12-21 2003-09-16 Dynea Canada, Ltd. Abrasive composition containing organic particles for chemical mechanical planarization
US6776810B1 (en) 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
WO2003070853A1 (fr) * 2002-02-20 2003-08-28 Nihon Micro Coating Co., Ltd. Pate de polissage
US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
US20040162011A1 (en) * 2002-08-02 2004-08-19 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and production process of semiconductor device
JP3692109B2 (ja) * 2002-10-24 2005-09-07 株式会社東芝 半導体装置の製造方法
US6918820B2 (en) 2003-04-11 2005-07-19 Eastman Kodak Company Polishing compositions comprising polymeric cores having inorganic surface particles and method of use
US7044836B2 (en) * 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
JP2004342751A (ja) * 2003-05-14 2004-12-02 Toshiba Corp Cmp用スラリー、研磨方法、および半導体装置の製造方法
TWI241626B (en) * 2003-06-02 2005-10-11 Toshiba Corp Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device
CN1860198B (zh) 2003-07-09 2010-06-16 迪纳化学公司 用于化学机械抛光的非聚合有机颗粒
JP2005093785A (ja) * 2003-09-18 2005-04-07 Toshiba Corp Cmp用スラリー、研磨方法、および半導体装置の製造方法
US7427361B2 (en) 2003-10-10 2008-09-23 Dupont Air Products Nanomaterials Llc Particulate or particle-bound chelating agents
TW200613485A (en) * 2004-03-22 2006-05-01 Kao Corp Polishing composition
TWI282801B (en) * 2004-05-06 2007-06-21 Mitsui Chemicals Inc Slurry for polishing use
JP4292117B2 (ja) * 2004-07-15 2009-07-08 Jsr株式会社 化学機械研磨用水系分散体及び化学機械研磨方法
US7531105B2 (en) * 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US20060096179A1 (en) * 2004-11-05 2006-05-11 Cabot Microelectronics Corporation CMP composition containing surface-modified abrasive particles
US8460414B2 (en) * 2005-04-14 2013-06-11 Mitsui Chemicals, Inc. Polishing slurry and polishing material using same
US7759273B2 (en) * 2005-04-20 2010-07-20 Cabot Corporation Methods of forming an alkali metal salt
US20060276041A1 (en) * 2005-05-17 2006-12-07 Jsr Corporation Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and kit for preparing chemical mechanical polishing aqueous dispersion
US7316977B2 (en) * 2005-08-24 2008-01-08 Air Products And Chemicals, Inc. Chemical-mechanical planarization composition having ketooxime compounds and associated method for use
US20070075042A1 (en) * 2005-10-05 2007-04-05 Siddiqui Junaid A Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method
JP4868840B2 (ja) * 2005-11-30 2012-02-01 Jsr株式会社 半導体装置の製造方法
KR101134587B1 (ko) * 2005-12-07 2012-04-09 삼성코닝정밀소재 주식회사 금속 배선용 연마 슬러리
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US7820067B2 (en) * 2006-03-23 2010-10-26 Cabot Microelectronics Corporation Halide anions for metal removal rate control
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DE102007035992A1 (de) * 2007-05-25 2008-11-27 Evonik Degussa Gmbh Ceroxid, Siliciumdioxid oder Schichtsilikat und Aminosäure enthaltende Dispersion
JP5327427B2 (ja) * 2007-06-19 2013-10-30 Jsr株式会社 化学機械研磨用水系分散体調製用セット、化学機械研磨用水系分散体の調製方法、化学機械研磨用水系分散体および化学機械研磨方法
TWI501807B (zh) * 2007-12-07 2015-10-01 Univ Nat Taiwan A method for dispersing metal oxide nanoparticles
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US9382450B2 (en) * 2009-01-20 2016-07-05 Cabot Corporation Compositions comprising silane modified metal oxides
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US9982166B2 (en) * 2013-12-20 2018-05-29 Cabot Corporation Metal oxide-polymer composite particles for chemical mechanical planarization
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Also Published As

Publication number Publication date
KR20010070227A (ko) 2001-07-25
DE60025959D1 (de) 2006-04-20
DE60015479T2 (de) 2005-10-27
EP1104778B1 (de) 2004-11-03
EP1104778A2 (de) 2001-06-06
EP1104778A3 (de) 2002-08-21
KR100444239B1 (ko) 2004-08-11
DE60025959T2 (de) 2006-10-19
US6582761B1 (en) 2003-06-24
EP1243611A1 (de) 2002-09-25
EP1243611B1 (de) 2006-02-08
TW534917B (en) 2003-06-01

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