DE60001587D1 - Schaltungsausführung zur reduzierung des bitleitungslekcstroms bei programmierungs-und überlöschungskorrekturmodus in einem flash-eeprom - Google Patents
Schaltungsausführung zur reduzierung des bitleitungslekcstroms bei programmierungs-und überlöschungskorrekturmodus in einem flash-eepromInfo
- Publication number
- DE60001587D1 DE60001587D1 DE60001587T DE60001587T DE60001587D1 DE 60001587 D1 DE60001587 D1 DE 60001587D1 DE 60001587 T DE60001587 T DE 60001587T DE 60001587 T DE60001587 T DE 60001587T DE 60001587 D1 DE60001587 D1 DE 60001587D1
- Authority
- DE
- Germany
- Prior art keywords
- programming
- leakage current
- resistors
- apde
- array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 101100216008 Gallus gallus ANPEP gene Proteins 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 1
- 238000010791 quenching Methods 0.000 abstract 1
- 230000000171 quenching effect Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
- G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14877999P | 1999-08-13 | 1999-08-13 | |
US09/417,273 US6046932A (en) | 1999-08-13 | 1999-10-13 | Circuit implementation to quench bit line leakage current in programming and over-erase correction modes in flash EEPROM |
PCT/US2000/021005 WO2001013377A1 (en) | 1999-08-13 | 2000-08-01 | Circuit implementation to quench bit line leakage current in programming and over-erase correction modes in flash eeprom |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60001587D1 true DE60001587D1 (de) | 2003-04-10 |
DE60001587T2 DE60001587T2 (de) | 2003-12-24 |
Family
ID=26846158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60001587T Expired - Lifetime DE60001587T2 (de) | 1999-08-13 | 2000-08-01 | Schaltungsausführung zur reduzierung des bitleitungslekcstroms bei programmierungs-und überlöschungskorrekturmodus in einem flash-eeprom |
Country Status (9)
Country | Link |
---|---|
US (1) | US6046932A (de) |
EP (1) | EP1203378B1 (de) |
JP (1) | JP3761815B2 (de) |
KR (1) | KR100489421B1 (de) |
CN (1) | CN1174430C (de) |
AT (1) | ATE233937T1 (de) |
DE (1) | DE60001587T2 (de) |
TW (1) | TW476963B (de) |
WO (1) | WO2001013377A1 (de) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6370065B1 (en) * | 2000-02-25 | 2002-04-09 | Advanced Micro Devices, Inc. | Serial sequencing of automatic program disturb erase verify during a fast erase mode |
US6272046B1 (en) * | 2000-05-02 | 2001-08-07 | Advanced Micro Devices, Inc. | Individual source line to decrease column leakage |
US6320451B1 (en) * | 2000-07-07 | 2001-11-20 | Dallas Semiconductor Corporation | Static power digital potentiometer |
US6571154B2 (en) * | 2001-02-19 | 2003-05-27 | Delphi Technologies, Inc. | Method and apparatus for accessing vehicle systems |
US6400608B1 (en) | 2001-04-25 | 2002-06-04 | Advanced Micro Devices, Inc. | Accurate verify apparatus and method for NOR flash memory cells in the presence of high column leakage |
US6469939B1 (en) * | 2001-05-18 | 2002-10-22 | Advanced Micro Devices, Inc. | Flash memory device with increase of efficiency during an APDE (automatic program disturb after erase) process |
KR100465066B1 (ko) * | 2002-05-28 | 2005-01-06 | 주식회사 하이닉스반도체 | 플래시 메모리의 누설 전류 감소 장치 |
US7061792B1 (en) * | 2002-08-10 | 2006-06-13 | National Semiconductor Corporation | Low AC power SRAM architecture |
US6628545B1 (en) * | 2002-11-26 | 2003-09-30 | Advanced Micro Devices, Inc. | Memory circuit for suppressing bit line current leakage |
US6819593B2 (en) * | 2002-12-13 | 2004-11-16 | Taiwan Semiconductor Manufacturing Company | Architecture to suppress bit-line leakage |
JP4388274B2 (ja) * | 2002-12-24 | 2009-12-24 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
US6909638B2 (en) * | 2003-04-30 | 2005-06-21 | Freescale Semiconductor, Inc. | Non-volatile memory having a bias on the source electrode for HCI programming |
US20050021190A1 (en) * | 2003-07-24 | 2005-01-27 | Worrell Barry C. | Method and apparatus for accessing vehicle systems |
US7023734B2 (en) * | 2004-03-03 | 2006-04-04 | Elite Semiconductor Memory Technology, Inc. | Overerase correction in flash EEPROM memory |
US7009882B2 (en) * | 2004-03-03 | 2006-03-07 | Elite Semiconductor Memory Technology, Inc. | Bit switch voltage drop compensation during programming in nonvolatile memory |
US7161844B2 (en) * | 2004-03-30 | 2007-01-09 | Silicon Storage Technology, Inc. | Method and apparatus for compensating for bitline leakage current |
US7035131B2 (en) * | 2004-05-06 | 2006-04-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dynamic random access memory cell leakage current detector |
JP4680195B2 (ja) * | 2004-06-25 | 2011-05-11 | スパンション エルエルシー | 半導体装置及びソース電圧制御方法 |
US7235997B2 (en) * | 2004-07-14 | 2007-06-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS leakage current meter |
US7042767B2 (en) * | 2004-08-02 | 2006-05-09 | Spansion, Llc | Flash memory unit and method of programming a flash memory device |
DE602004026934D1 (de) * | 2004-08-30 | 2010-06-10 | Spansion Llc | Löschverfahren für nichtflüchtige speicherung und nichtflüchtige speicherung |
US7227783B2 (en) * | 2005-04-28 | 2007-06-05 | Freescale Semiconductor, Inc. | Memory structure and method of programming |
US7215583B2 (en) * | 2005-08-16 | 2007-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Circuit for inhibition of program disturbance in memory devices |
KR100736408B1 (ko) * | 2006-06-10 | 2007-07-09 | 삼성전자주식회사 | 비트 라인의 전압 강하를 보상할 수 있는 반도체 장치와 그보상 방법 |
JP2007334925A (ja) | 2006-06-12 | 2007-12-27 | Nec Electronics Corp | 不揮発性半導体記憶装置 |
US8773934B2 (en) | 2006-09-27 | 2014-07-08 | Silicon Storage Technology, Inc. | Power line compensation for flash memory sense amplifiers |
KR100830580B1 (ko) * | 2006-10-20 | 2008-05-21 | 삼성전자주식회사 | 플래시 메모리 장치를 포함한 메모리 시스템의 데이터 복원방법 |
US7382661B1 (en) | 2007-02-07 | 2008-06-03 | Elite Semiconductor Memory Technology Inc. | Semiconductor memory device having improved programming circuit and method of programming same |
US7525849B2 (en) * | 2007-02-13 | 2009-04-28 | Elite Semiconductor Memory Technology, Inc. | Flash memory with sequential programming |
US8081520B2 (en) * | 2010-02-03 | 2011-12-20 | Elite Semiconductor Memory Technology Inc. | Over erase correction method of flash memory apparatus |
CN102034544A (zh) * | 2010-12-30 | 2011-04-27 | 天津南大强芯半导体芯片设计有限公司 | 一种eeprom存储器电路 |
US9076506B2 (en) | 2012-09-28 | 2015-07-07 | Sandisk Technologies Inc. | Variable rate parallel to serial shift register |
US9490035B2 (en) | 2012-09-28 | 2016-11-08 | SanDisk Technologies, Inc. | Centralized variable rate serializer and deserializer for bad column management |
CN104051006A (zh) * | 2013-03-11 | 2014-09-17 | 北京兆易创新科技股份有限公司 | 一种减小浮栅存储器位线漏电流的方法及其装置 |
US9312002B2 (en) | 2014-04-04 | 2016-04-12 | Sandisk Technologies Inc. | Methods for programming ReRAM devices |
CN109935266B (zh) * | 2017-12-18 | 2021-03-09 | 北京兆易创新科技股份有限公司 | 一种存储单元漏电处理方法、装置及存储器 |
DE102020216060B4 (de) * | 2020-12-16 | 2024-08-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Elektrische Schaltungsanordnung mit einem ferroelektrischen Feldeffekttransistor und Speicherzelle |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63160097A (ja) * | 1986-12-24 | 1988-07-02 | Toshiba Corp | 半導体不揮発性メモリ |
US5359558A (en) * | 1993-08-23 | 1994-10-25 | Advanced Micro Devices, Inc. | Flash eeprom array with improved high endurance |
US5481494A (en) * | 1994-12-22 | 1996-01-02 | Advanced Micro Devices, Inc. | Method for tightening VT distribution of 5 volt-only flash EEPROMS |
US5482881A (en) * | 1995-03-14 | 1996-01-09 | Advanced Micro Devices, Inc. | Method of making flash EEPROM memory with reduced column leakage current |
US5642311A (en) * | 1995-10-24 | 1997-06-24 | Advanced Micro Devices | Overerase correction for flash memory which limits overerase and prevents erase verify errors |
-
1999
- 1999-10-13 US US09/417,273 patent/US6046932A/en not_active Expired - Lifetime
-
2000
- 2000-08-01 WO PCT/US2000/021005 patent/WO2001013377A1/en active IP Right Grant
- 2000-08-01 DE DE60001587T patent/DE60001587T2/de not_active Expired - Lifetime
- 2000-08-01 EP EP00952380A patent/EP1203378B1/de not_active Expired - Lifetime
- 2000-08-01 KR KR10-2002-7001713A patent/KR100489421B1/ko not_active IP Right Cessation
- 2000-08-01 CN CNB008115451A patent/CN1174430C/zh not_active Expired - Fee Related
- 2000-08-01 JP JP2001517390A patent/JP3761815B2/ja not_active Expired - Fee Related
- 2000-08-01 AT AT00952380T patent/ATE233937T1/de not_active IP Right Cessation
- 2000-08-11 TW TW089116205A patent/TW476963B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN1369096A (zh) | 2002-09-11 |
ATE233937T1 (de) | 2003-03-15 |
WO2001013377A1 (en) | 2001-02-22 |
TW476963B (en) | 2002-02-21 |
DE60001587T2 (de) | 2003-12-24 |
EP1203378A1 (de) | 2002-05-08 |
EP1203378B1 (de) | 2003-03-05 |
US6046932A (en) | 2000-04-04 |
KR100489421B1 (ko) | 2005-05-16 |
JP3761815B2 (ja) | 2006-03-29 |
JP2003507834A (ja) | 2003-02-25 |
CN1174430C (zh) | 2004-11-03 |
KR20030009283A (ko) | 2003-01-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: SPANSION LLC (N.D.GES.D. STAATES DELAWARE), SU, US |