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DE59814474D1 - Verfahren zum Herstellen einer Mehrzahl von Halbleiterlasern - Google Patents

Verfahren zum Herstellen einer Mehrzahl von Halbleiterlasern

Info

Publication number
DE59814474D1
DE59814474D1 DE1998514474 DE59814474A DE59814474D1 DE 59814474 D1 DE59814474 D1 DE 59814474D1 DE 1998514474 DE1998514474 DE 1998514474 DE 59814474 A DE59814474 A DE 59814474A DE 59814474 D1 DE59814474 D1 DE 59814474D1
Authority
DE
Grant status
Grant
Patent type
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE1998514474
Other languages
English (en)
Inventor
Volker Dr Haerle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OSRAM Opto Semiconductors GmbH
Original Assignee
OSRAM Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/0201Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
DE1998514474 1997-09-19 1998-09-18 Verfahren zum Herstellen einer Mehrzahl von Halbleiterlasern Active DE59814474D1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE1997141442 DE19741442A1 (de) 1997-09-19 1997-09-19 Verfahren zum Herstellen einer Halbleitervorrichtung
DE1998138810 DE19838810B4 (de) 1998-08-26 1998-08-26 Verfahren zum Herstellen einer Mehrzahl von Ga(In,Al)N-Leuchtdiodenchips
DE1998514474 DE59814474D1 (de) 1997-09-19 1998-09-18 Verfahren zum Herstellen einer Mehrzahl von Halbleiterlasern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1998514474 DE59814474D1 (de) 1997-09-19 1998-09-18 Verfahren zum Herstellen einer Mehrzahl von Halbleiterlasern

Publications (1)

Publication Number Publication Date
DE59814474D1 true DE59814474D1 (de) 2010-12-16

Family

ID=26040146

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1998514474 Active DE59814474D1 (de) 1997-09-19 1998-09-18 Verfahren zum Herstellen einer Mehrzahl von Halbleiterlasern

Country Status (5)

Country Link
US (1) US6100104A (de)
EP (1) EP0903792B1 (de)
JP (1) JPH11154648A (de)
CN (1) CN1218997A (de)
DE (1) DE59814474D1 (de)

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FR2769924B1 (fr) 1997-10-20 2000-03-10 Centre Nat Rech Scient Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche
US6608327B1 (en) 1998-02-27 2003-08-19 North Carolina State University Gallium nitride semiconductor structure including laterally offset patterned layers
US6051849A (en) 1998-02-27 2000-04-18 North Carolina State University Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
US6265289B1 (en) * 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
DE19838810B4 (de) * 1998-08-26 2006-02-09 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer Mehrzahl von Ga(In,Al)N-Leuchtdiodenchips
US20040029365A1 (en) * 2001-05-07 2004-02-12 Linthicum Kevin J. Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6177688B1 (en) 1998-11-24 2001-01-23 North Carolina State University Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
US6255198B1 (en) 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US20010042866A1 (en) * 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
US7004644B1 (en) * 1999-06-29 2006-02-28 Finisar Corporation Hermetic chip-scale package for photonic devices
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US6521514B1 (en) 1999-11-17 2003-02-18 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
US6380108B1 (en) 1999-12-21 2002-04-30 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
US6403451B1 (en) 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
US6261929B1 (en) * 2000-02-24 2001-07-17 North Carolina State University Methods of forming a plurality of semiconductor layers using spaced trench arrays
JP2001303020A (ja) * 2000-04-24 2001-10-31 Sunstar Inc 透明液状組成物
JP5523277B2 (ja) * 2000-04-26 2014-06-18 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH 発光半導体素子並びに発光性半導体素子の製造方法
CN1292494C (zh) * 2000-04-26 2006-12-27 奥斯兰姆奥普托半导体有限责任公司 发光半导体元件及其制造方法
CN1252837C (zh) 2000-04-26 2006-04-19 奥斯兰姆奥普托半导体股份有限两合公司 在GaN基板上的发光二极管芯片和用GaN基板上的发光二极管芯片制造发光二极管元件的方法
CN100426544C (zh) 2000-05-26 2008-10-15 奥斯兰姆奥普托半导体有限责任公司 具有氮化镓基的辐射外延层的发光二极管芯片及制造方法
US6867539B1 (en) * 2000-07-12 2005-03-15 3M Innovative Properties Company Encapsulated organic electronic devices and method for making same
JP3906653B2 (ja) * 2000-07-18 2007-04-18 ソニー株式会社 画像表示装置及びその製造方法
US6334971B1 (en) * 2000-07-20 2002-01-01 Wen-Ping Huang Manufacturing method for diode group processed by injection molding on the surface
DE10051465A1 (de) * 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
US6518079B2 (en) * 2000-12-20 2003-02-11 Lumileds Lighting, U.S., Llc Separation method for gallium nitride devices on lattice-mismatched substrates
JP2002261327A (ja) 2001-03-06 2002-09-13 Sony Corp 半導体発光素子及び半導体発光素子の製造方法
US6610554B2 (en) * 2001-04-18 2003-08-26 Hyung Se Kim Method of fabricating organic electroluminescent display
US8294172B2 (en) 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
US20030189215A1 (en) * 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
US6841802B2 (en) * 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
US6750071B2 (en) * 2002-07-06 2004-06-15 Optical Communication Products, Inc. Method of self-aligning an oxide aperture with an annular intra-cavity contact in a long wavelength VCSEL
KR100495215B1 (ko) * 2002-12-27 2005-06-14 삼성전기주식회사 수직구조 갈륨나이트라이드 발광다이오드 및 그 제조방법
KR100483049B1 (ko) * 2003-06-03 2005-04-15 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드의 제조방법
DE10335080A1 (de) * 2003-07-31 2005-03-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE10335081A1 (de) * 2003-07-31 2005-03-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterchips und optoeleketronischer Halbleiterchip
JP4049723B2 (ja) * 2003-09-04 2008-02-20 沖電気工業株式会社 窒化物半導体素子の製造方法及び窒化物半導体素子の製造装置
US8174037B2 (en) * 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US7259402B2 (en) * 2004-09-22 2007-08-21 Cree, Inc. High efficiency group III nitride-silicon carbide light emitting diode
US7737459B2 (en) * 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
US8513686B2 (en) * 2004-09-22 2013-08-20 Cree, Inc. High output small area group III nitride LEDs
US8288942B2 (en) 2004-12-28 2012-10-16 Cree, Inc. High efficacy white LED
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
US20060275998A1 (en) * 2005-06-02 2006-12-07 Seiko Epson Corporation Optical element and method for manufacturing the same
US8168000B2 (en) * 2005-06-15 2012-05-01 International Rectifier Corporation III-nitride semiconductor device fabrication
US20070049048A1 (en) * 2005-08-31 2007-03-01 Shahid Rauf Method and apparatus for improving nitrogen profile during plasma nitridation
WO2007032546A8 (en) * 2005-09-16 2008-04-03 Showa Denko Kk Production method for nitride semiconductor light emitting device
KR20090019871A (ko) 2006-05-31 2009-02-25 크리 엘이디 라이팅 솔루션즈, 인크. 조명 장치 및 조명 방법
JP4997502B2 (ja) * 2006-09-20 2012-08-08 国立大学法人東北大学 半導体素子の製造方法
US20080187018A1 (en) * 2006-10-19 2008-08-07 Amberwave Systems Corporation Distributed feedback lasers formed via aspect ratio trapping
JP2009032971A (ja) * 2007-07-27 2009-02-12 Rohm Co Ltd 窒化物半導体素子の製造方法
CN101465319B (zh) 2007-12-17 2010-11-03 洲磊曜富科技股份有限公司 形成发光二极管元件的方法
DE102009024311A1 (de) * 2009-06-05 2011-01-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauelement und Verfahren zu seiner Herstellung
DE102009035429A1 (de) * 2009-07-31 2011-02-03 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
DE102010012423A1 (de) * 2009-12-21 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Lumineszenzdiodenanordnung, Hinterleuchtungsvorrichtung und Anzeigevorrichtung
CN101950783A (zh) * 2010-08-23 2011-01-19 厦门市三安光电科技有限公司 氮化镓基高亮度发光二极管芯片的制作工艺
CN102456788B (zh) * 2010-10-20 2014-08-27 展晶科技(深圳)有限公司 发光二极管及其制造方法
CN102456778B (zh) * 2010-10-26 2014-11-05 展晶科技(深圳)有限公司 发光二极管芯片制造方法
CN102130230A (zh) * 2010-12-28 2011-07-20 中国科学院半导体研究所 发光二极管的制备方法

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JPH02260416A (en) * 1989-03-31 1990-10-23 Toshiba Corp Manufacture of semiconductor device
JP2943510B2 (ja) * 1991-08-09 1999-08-30 日本電気株式会社 可変波長半導体レーザ装置
JPH05251738A (ja) * 1992-03-05 1993-09-28 Fujitsu Ltd 半導体光素子アレイの作製方法
US5578839A (en) * 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
EP0599244B1 (de) * 1992-11-27 1999-04-14 Denso Corporation Tragbares elektronisches Gerät
JP2748354B2 (ja) * 1993-10-21 1998-05-06 日亜化学工業株式会社 窒化ガリウム系化合物半導体チップの製造方法
US5478774A (en) * 1994-06-15 1995-12-26 Motorola Method of fabricating patterned-mirror VCSELs using selective growth
JP3246207B2 (ja) * 1994-08-04 2002-01-15 松下電器産業株式会社 半導体レーザの製造方法
JPH08316582A (ja) * 1995-05-19 1996-11-29 Nec Corp 半導体レーザ
JPH0945987A (ja) * 1995-07-31 1997-02-14 Hitachi Ltd 半導体レーザ素子

Also Published As

Publication number Publication date Type
US6100104A (en) 2000-08-08 grant
EP0903792A3 (de) 2000-03-22 application
CN1218997A (zh) 1999-06-09 application
EP0903792B1 (de) 2010-11-03 grant
JPH11154648A (ja) 1999-06-08 application
EP0903792A2 (de) 1999-03-24 application

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