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Plasmaangeregtes chemisches gasphasenabscheide-verfahren zum abscheiden von siliziumnitrid oder siliziumoxinitrid in einem mim-kondensator

Info

Publication number
DE50313348D1
DE50313348D1 DE2003513348 DE50313348A DE50313348D1 DE 50313348 D1 DE50313348 D1 DE 50313348D1 DE 2003513348 DE2003513348 DE 2003513348 DE 50313348 A DE50313348 A DE 50313348A DE 50313348 D1 DE50313348 D1 DE 50313348D1
Authority
DE
Grant status
Grant
Patent type
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE2003513348
Other languages
English (en)
Inventor
Mirko Vogt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/314Inorganic layers
    • H01L21/318Inorganic layers composed of nitrides
    • H01L21/3185Inorganic layers composed of nitrides of siliconnitrides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308Oxynitrides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34Nitrides
    • C23C16/345Silicon nitride
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L28/00Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40Capacitors
DE2003513348 2002-05-29 2003-05-14 Plasmaangeregtes chemisches gasphasenabscheide-verfahren zum abscheiden von siliziumnitrid oder siliziumoxinitrid in einem mim-kondensator Active DE50313348D1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE2002123954 DE10223954A1 (de) 2002-05-29 2002-05-29 Plasmaangeregtes chemisches Gasphasenabscheide-Verfahren zum Abscheiden von Siliziumnitrid oder Siliziumoxinitrid, Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung
DE2003513348 DE50313348D1 (de) 2002-05-29 2003-05-14 Plasmaangeregtes chemisches gasphasenabscheide-verfahren zum abscheiden von siliziumnitrid oder siliziumoxinitrid in einem mim-kondensator
PCT/DE2003/001552 WO2003102264A3 (de) 2002-05-29 2003-05-14 Verfahren zum abscheiden von siliziumnitrid oder siliziumoxinitrid sowie entsprechendes erzeugnis,

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2003513348 DE50313348D1 (de) 2002-05-29 2003-05-14 Plasmaangeregtes chemisches gasphasenabscheide-verfahren zum abscheiden von siliziumnitrid oder siliziumoxinitrid in einem mim-kondensator

Publications (1)

Publication Number Publication Date
DE50313348D1 true DE50313348D1 (de) 2011-02-03

Family

ID=29432440

Family Applications (2)

Application Number Title Priority Date Filing Date
DE2002123954 Withdrawn DE10223954A1 (de) 2002-05-29 2002-05-29 Plasmaangeregtes chemisches Gasphasenabscheide-Verfahren zum Abscheiden von Siliziumnitrid oder Siliziumoxinitrid, Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung
DE2003513348 Active DE50313348D1 (de) 2002-05-29 2003-05-14 Plasmaangeregtes chemisches gasphasenabscheide-verfahren zum abscheiden von siliziumnitrid oder siliziumoxinitrid in einem mim-kondensator

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE2002123954 Withdrawn DE10223954A1 (de) 2002-05-29 2002-05-29 Plasmaangeregtes chemisches Gasphasenabscheide-Verfahren zum Abscheiden von Siliziumnitrid oder Siliziumoxinitrid, Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung

Country Status (5)

Country Link
US (1) US7294553B2 (de)
JP (1) JP4825418B2 (de)
DE (2) DE10223954A1 (de)
EP (1) EP1507888B1 (de)
WO (1) WO2003102264A3 (de)

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* Cited by examiner, † Cited by third party
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WO2005031850A3 (en) * 2003-09-26 2006-01-05 California Inst Of Techn Detection and reduction of dielectric breakdown in semiconductor devices
DE102004003337A1 (de) * 2004-01-22 2005-08-18 Infineon Technologies Ag Plasmaangeregtes chemisches Gasphasenabscheide-Verfahren, Silizium-Sauerstoff-Stickstoff-haltiges Material und Schicht-Anordnung
US7097779B2 (en) * 2004-07-06 2006-08-29 Tokyo Electron Limited Processing system and method for chemically treating a TERA layer
DE102004050391B4 (de) * 2004-10-15 2007-02-08 Infineon Technologies Ag Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung
US7268038B2 (en) * 2004-11-23 2007-09-11 Newport Fab, Llc Method for fabricating a MIM capacitor having increased capacitance density and related structure
JP5186776B2 (ja) * 2007-02-22 2013-04-24 富士通株式会社 半導体装置及びその製造方法
US7606021B2 (en) * 2007-02-26 2009-10-20 United Microelectronics Corp. Metal-insulator-metal capacitor and method for fabricating the same
US20090071371A1 (en) * 2007-09-18 2009-03-19 College Of William And Mary Silicon Oxynitride Coating Compositions
US7678715B2 (en) * 2007-12-21 2010-03-16 Applied Materials, Inc. Low wet etch rate silicon nitride film
US7943527B2 (en) * 2008-05-30 2011-05-17 The Board Of Trustees Of The University Of Illinois Surface preparation for thin film growth by enhanced nucleation
KR101017763B1 (ko) * 2008-10-16 2011-02-28 주식회사 동부하이텍 Mim 커패시터 및 그 제조 방법
US8563095B2 (en) * 2010-03-15 2013-10-22 Applied Materials, Inc. Silicon nitride passivation layer for covering high aspect ratio features
JP5922352B2 (ja) * 2011-08-11 2016-05-24 Sppテクノロジーズ株式会社 窒化膜の製造装置及びその製造方法、並びにその製造プログラム
CN103094076B (zh) * 2011-11-02 2015-12-16 无锡华润上华半导体有限公司 用于提高0.18μm工艺MIM电容性能的方法
CN103060778B (zh) * 2013-01-23 2015-03-11 深圳市劲拓自动化设备股份有限公司 平板式pecvd装置
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
JP2015149404A (ja) * 2014-02-06 2015-08-20 富士フイルム株式会社 シリコンオキシナイトライド膜およびその製造方法、トランジスタ

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4618541A (en) * 1984-12-21 1986-10-21 Advanced Micro Devices, Inc. Method of forming a silicon nitride film transparent to ultraviolet radiation and resulting article
GB2186116B (en) * 1986-02-03 1989-11-22 Intel Corp Plasma enhanced chemical vapor deposited vertical resistor
US4786612A (en) * 1986-02-03 1988-11-22 Intel Corporation Plasma enhanced chemical vapor deposited vertical silicon nitride resistor
US5164339A (en) * 1988-09-30 1992-11-17 Siemens-Bendix Automotive Electronics L.P. Fabrication of oxynitride frontside microstructures
GB8909807D0 (en) * 1989-04-28 1989-06-14 Philips Electronic Associated Mim devices,their method of fabrication and display devices incorporating such devices
US5284789A (en) * 1990-04-25 1994-02-08 Casio Computer Co., Ltd. Method of forming silicon-based thin film and method of manufacturing thin film transistor using silicon-based thin film
GB9206086D0 (en) * 1992-03-20 1992-05-06 Philips Electronics Uk Ltd Manufacturing electronic devices comprising,e.g.tfts and mims
US6083852A (en) * 1997-05-07 2000-07-04 Applied Materials, Inc. Method for applying films using reduced deposition rates
US6316820B1 (en) * 1997-07-25 2001-11-13 Hughes Electronics Corporation Passivation layer and process for semiconductor devices
US6287951B1 (en) * 1998-12-07 2001-09-11 Motorola Inc. Process for forming a combination hardmask and antireflective layer
US6221794B1 (en) * 1998-12-08 2001-04-24 Advanced Micro Devices, Inc. Method of reducing incidence of stress-induced voiding in semiconductor interconnect lines
JP3575307B2 (ja) * 1998-12-28 2004-10-13 トヨタ自動車株式会社 排ガス浄化用触媒及びその製造方法
US6309932B1 (en) * 1999-01-14 2001-10-30 Agere Systems Guardian Corp Process for forming a plasma nitride film suitable for gate dielectric application in sub-0.25 μm technologies
US6171978B1 (en) * 1999-05-27 2001-01-09 Taiwan Semiconductor Manufacturing Company Method of manufacturing capacitor dielectric
US6242367B1 (en) * 1999-07-13 2001-06-05 Advanced Micro Devices, Inc. Method of forming silicon nitride films
US6372668B2 (en) * 2000-01-18 2002-04-16 Advanced Micro Devices, Inc. Method of forming silicon oxynitride films
US6383874B1 (en) * 2001-03-07 2002-05-07 Advanced Micro Devices, Inc. In-situ stack for high volume production of isolation regions

Also Published As

Publication number Publication date Type
US7294553B2 (en) 2007-11-13 grant
WO2003102264A3 (de) 2004-04-08 application
JP4825418B2 (ja) 2011-11-30 grant
EP1507888A2 (de) 2005-02-23 application
JP2005530924A (ja) 2005-10-13 application
WO2003102264A2 (de) 2003-12-11 application
US20060084236A1 (en) 2006-04-20 application
EP1507888B1 (de) 2010-12-22 grant
DE10223954A1 (de) 2003-12-11 application

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