DE4220158A1 - Selective precipitation of aluminium structures from the gas phase - using locally applied thin aluminium@ layers as catalysts in the pptn. process - Google Patents

Selective precipitation of aluminium structures from the gas phase - using locally applied thin aluminium@ layers as catalysts in the pptn. process

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Publication number
DE4220158A1
DE4220158A1 DE19924220158 DE4220158A DE4220158A1 DE 4220158 A1 DE4220158 A1 DE 4220158A1 DE 19924220158 DE19924220158 DE 19924220158 DE 4220158 A DE4220158 A DE 4220158A DE 4220158 A1 DE4220158 A1 DE 4220158A1
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Prior art keywords
aluminium
layers
thin
process
phase
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Withdrawn
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DE19924220158
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German (de)
Inventor
Herbert Dr Stafast
Erich Golusda
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Battelle Institut Ev
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Battelle Institut Ev
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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C23C16/20Deposition of aluminium only
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04Coating on selected surface areas, e.g. using masks
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562Selective deposition

Abstract

Method comprises a) applying aluminium locally as thin layers onto a substrate; and b) precipitating aluminium from the gas phase selectively onto the caalytically acting layers until a desired height of the structure has been attained. The thin selective aluminium layers - prior to the second process step - are pref. either protected against oxidn. caused by air, or subjected to oxidn.. Selective application of thin aluminium layers in the first process step takes place as laser-aided coating from the gas phase, as thermal vaporisation with the use of masks, or as metallisation. USE/ADVANTAGE - For manufacture of semiconductor components and products. It simplifies the manufacturing process, and eliminates the need for palladium, platinum or gold as catalyst materials.

Description

Die Erfindung betrifft ein Verfahren zur lokalen Abscheidung von Aluminiumstrukturen aus der Gasphase. The invention relates to a method for local deposition of aluminum structures from the gas phase. Eine selektive Abscheidung von Aluminiumstrukturen definierter Breite und Höhe ist z. A selective deposition of aluminum structures of defined width and height z. B. dann erforderlich, wenn als Kontakte für MIS- I-Solarzellen feine Aluminiumgitterstrukturen auf Silizium aufzubringen sind. As necessary if fine as contacts for MIS solar cell I-aluminum grid structures to be applied to silicon. Die bisher hierfür angewandten Verfahren (thermische Bedampfung durch Kontaktmasken und lokalisierte photochemische Beschichtung durch Projektionsmasken) sind aufwendig und erbringen zudem häufig keine zufriedenstellen den Strukturen bezüglich Haftfestigkeit, Fertigungstoleran zen der Strukturbreite und ausreichender Höhe. The previous methods used for this purpose (thermal evaporation by contact masks and localized photochemical coating by projection masks) are complicated and often also provide not satisfy the structures with respect to adhesive strength, Fertigungstoleran zen the structure width and a sufficient amount.

Der Erfindung lag daher die Aufgabe zugrunde, ein verbesser tes Verfahren zur selektiven Abscheidung von Aluminiumstruk turen anzugeben. The invention was therefore based on the object of specifying a Improvement tes process for the selective deposition of aluminum structural structures.

Diese Aufgabe wird durch den Gegenstand des Patentanspruchs 1 gelöst. This object is achieved by the subject of claim 1.

Die Erfinder versuchten bei der Lösung dieser Aufgabe zu nächst, ein bekanntes katalytisches Abscheideverfahren aus der Gasphase (kurz katalytische CVD) zu nutzen, wobei eine Oberfläche räumlich selektiv nur dort mit einem Festkörper beschichtet wird, wo zuvor ein geeigneter Katalysator auf ge bracht wurde. The inventors tried to use (short catalytic CVD) in the solution of this task to the next, a known catalytic deposition from the gas phase, wherein a surface is spatially selectively coated only there with a solid body where a suitable catalyst has been placed on ge before. Ein entsprechendes Zwei-Stufen-Verfahren ist von O. Gottsleben, HW Roesky und M. Stuke in Advanced Materials, 1991, Band 3, Heft Nr. 4, auf den Seiten 201 bis 202 beschrieben. A corresponding two-step process is described by O. God life, HW Roesky and M. Stuke in Advanced Materials, 1991, Volume 3, Issue no. 4 on pages 201-202. Hier wird in einem ersten Verfahrens schritt auf laserchemischem Weg aus einer metallorganischen Oberflächenschicht lokal elementares Palladium abgeschieden, die unverbrauchte metallorganische Schicht abgespült und auf diese Weise eine dünne Palladiumoberflächenstruktur erzeugt. Here, in a first process step is deposited on laser chemically from an organometallic surface layer locally elemental palladium, rinsed the unused organometallic layer, and in this way produces a thin palladium surface structure.

Auf dieser Struktur wird in einem zweiten Verfahrensschritt räumlich selektiv Aluminium in mehreren Mikrometern Höhe durch thermische CVD aus Trimethylamin-Trihydroaluminium katalytisch abgeschieden. In this structure, aluminum is in a second method step spatially selectively catalytically deposited in several micrometers height by thermal CVD of trimethylamine-Trihydroaluminium. Dabei scheint im Prozeß, nachdem nach der Abscheidung von einigen Nanometern Schichtdicke das Palladium bereits durch Aluminium bedeckt ist, die weitere Abscheidung autokatalytisch abzulaufen. In this case, appears in the process after the palladium layer thickness of several nanometers is covered by aluminum after deposition already, the further deposition autocatalytically expire.

Die Erfinder stellten nun fest, daß eine anfänglich örtlich selektive katalytische Wirkung nicht durch ein typisches Katalysatormaterial wie Palladium, Platin oder Gold hervor gerufen werden muß, sondern daß statt dessen eine dünne räumlich selektiv aufgebrachte Aluminium- oder Aluminium oxidschicht eine nachfolgende Abscheidung von Aluminium aus der Gasphase bereits derart begünstigt bzw. "katalysiert", daß die Festkörperabscheidung an den auf dem Substrat durch die anfängliche dünne Al-Schicht vorgegebenen Stellen er folgt. The inventors have now found that an initially locally selective catalytic effect need not be produced by a typical catalyst material such as palladium, platinum or gold forth, but that instead a thin spatially selectively deposited aluminum or aluminum oxide layer has a subsequent deposition of aluminum from the gas phase already favors such or "catalyzed" means that the solid deposition on the predetermined on the substrate by the initial thin Al layer places he follows.

Die Möglichkeit einer solchen katalytischen Abscheidung mit dem gleichen Festkörpermaterial in beiden Verfahrensschrit ten erbringt für die elektronischen Eigenschaften der resul tierenden Strukturen Substrat/Palladium/Aluminium bzw. Substrat/Aluminium (wobei das Substrat aus einem Halbleiter oder einem Halbleiter mit einer Isolatorschicht auf der Oberfläche bestehen kann) deutliche Unterschiede. The possibility of such catalytic deposition of the same solid material in both Verfahrensschrit th provides for the electronic properties of the resul animal structures substrate / palladium / aluminum or substrate / aluminum (wherein the substrate is made of a semiconductor or a semiconductor with an insulator layer on the surface can) significant differences. ZB im Fall von herzustellenden Aluminiumkontakten bringt die erfindungsgemäß hergestellte Struktur einen entscheidenden Fortschritt und ermöglicht funktionsgerechte Al-Gitterstruk turen für MIS-I-Solarzellen überhaupt. For example, in the case of manufactured aluminum contacts brings the structure according to the invention produced a significant step forward and enables functionally appropriate Al-lattice structures for structural MIS-I solar cells at all. Jedoch ist es auch für andere Anwendungsfälle von Vorteil, wenn direkt Alumini um auf die Halbleiter- bzw. Isolatorschicht aufgebracht wird. However, it is also suitable for other applications advantageous if directly Alumini is applied around the semiconductor or insulator layer.

Im Fall eines Halbleitersubstrats werden Schottky-Kontakte der Art Halbleiter/Palladium bzw. Halbleiter/Aluminium gebildet. In the case of a semiconductor substrate Schottky contacts of the type semiconductor / palladium or semiconductor / aluminum are formed. Bei Vorliegen einer Isolatorschicht entstehen Tunnelkontakte (MIS-Kontakte) der Art Halbleiter/Isolator/Palladium bzw. Halbleiter/Isolator/Aluminium. Tunnel junctions are formed (MIS-contact) of the type semiconductor / insulator / palladium or semiconductor / insulator / aluminum in the presence of an insulator layer. Wegen der stark unterschiedlichen Autrittsarbeiten von Aluminium mit 4,2 eV in der (III)-Ebene und Palladium mit 5,6 eV in der (III)-Ebene weisen die gebildeten Schottky- und Tunnelkon takte bei sonst identischen Halbleiter- bzw. Halbleiter- und Isolatormaterialien erheblich voneinander abweichende elek tronische Eigenschaften auf. Because of the widely varying Autrittsarbeiten of aluminum with 4.2 eV in the (III) plane and palladium of 5.6 eV in the (III) plane have the Schottky contacts and Tunnelkon formed under otherwise identical semiconductor or semiconductor and insulator materials greatly differing elec tronic properties.

Im folgenden wird die Erfindung anhand eines Ausführungsbei spiels erläutert, wobei die Figur das damit gewonnene Schichtdickenprofil einer Aluminiumstruktur zeigt. In the following the invention is explained with reference of an exemplary embodiment game, wherein the figure shows the film thickness profile of an aluminum structure thus obtained.

In einer ersten Prozeßstufe wurden Aluminiumpunkte von 2 mm Durchmesser auf konventionelle Weise durch eine Maske auf einen Siliziumwafer mit einer wenige Nanometer dicken Sili ziumoxidschicht aufgedampft, wobei etwa 100 nm dicke kreis runde Schichten entstanden. In a first process step aluminum dots were evaporated ziumoxidschicht of 2 mm diameter in a conventional manner by a mask on a silicon wafer having a few nanometers thick Sili, with about 100 nm thick circular layers formed. Es war sogar möglich, diese Aluminium-Basisschichten bei der Überführung aus der Bedamp fungsanlage in die CVD-Anlage der Umgebungsluft auszusetzen und damit oberflächlich zu oxidieren, bevor in der zweiten Prozeßstufe mittels CVD aus Trimethylamin-Trihydroaluminium auf diesen Punkten Schichtdicken bis zu 25 µm abgeschieden wurden. It was even possible, this aluminum-based layers in the transfer from the Bedamp deposition installation in the CVD apparatus of the ambient air to suspend and thus to oxidize the surface, before the second process stage by means of CVD from trimethylamine Trihydroaluminium on these points layer thicknesses up to 25 microns deposited were. Infolgedessen ist es z. Consequently, it is for. B. möglich, vorbereitete, im ersten Verfahrensschritt selektiv beschichtete Substrate ohne größeren Aufwand für eine spätere CVD-Strukturierung zu lagern. As possible, prepared to store selectively coated in the first step substrates without major effort for subsequent CVD structuring. Aus der Figur geht hervor, daß die Schichtkanten der resultierenden selektiven Aluminiumstruktur steil und defi niert sind. From the figure it is apparent that the layer edges of the resulting selective aluminum structure are steep and defi ned. Dies bedeutet, daß auf diese Weise auch Struktu ren mit einem kleinen Verhältnis Strukturbreite : Struktur höhe hergestellt werden können. This means that in this way also struc reindeer with a small ratio structure width: height structure can be produced. Auch die übrigen Eigenschaf ten wie Haftung, elektrische Kontakteigenschaften usw. er wiesen sich als zufriedenstellend. The other char acteristics such as adhesion, electrical contact properties, etc. he reported to be satisfactory.

Für den ersten Verfahrensschritt können alternativ neben einer lokalen Laser-CVD und thermischer Bedampfung mit Maskentechnik auch andersartige lokale Modifikationen (z. B. Metallisierung) einer vorhandenen Substratschicht angewandt werden. For the first process step, alternatively, other types of local modifications (eg. B. metallization) an existing substrate layer can be applied in addition to a local laser CVD and thermal vapor deposition with a mask technique. Die anfängliche dünne Schicht kann auch andere Schichtdicken von mehr oder weniger als 100 nm haben. The initial thin layer can also have different layer thicknesses of more or less than 100 nm.

Bei der folgenden katalytischen CVD kann auch aus anderen Stoffzusammensetzungen wie Triethylamin-Trihydroaluminium oder äquivalenten, thermisch leicht zersetzbaren Aluminium verbindungen ohne direkte Aluminium-Kohlenstoff-Bedingungen abgeschieden werden. In the following catalytic CVD can also be deposited in other compositions such as triethylamine Trihydroaluminium or equivalent thermally readily decomposable aluminum compounds without direct aluminum-carbon conditions.

Claims (3)

  1. 1. Verfahren zur selektiven Abscheidung von Aluminiumstruk turen, in welchem in einem ersten Verfahrensschritt auf einem Substrat Alu minium lokal in dünnen Schichten aufgebracht wird und in einem zweiten Verfahrensschritt Aluminium mittels Ab scheidung aus der Gasphase selektiv auf den katalytisch wirkenden Schichten bis auf eine gewünschte Strukturhöhe abgeschieden wird. 1. A method for the selective deposition of aluminum structural structures in which is applied in a first process step on a substrate alu minium locally in thin layers and in a second process step aluminum by Ab decision from the gas phase selectively on the catalytic layers up to a desired structure height is deposited.
  2. 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß die dünnen selektiven Aluminiumschichten vor dem zweiten Verfahrensschritt entweder vor Oxidation durch Luftsauerstoff geschützt werden oder der Oxidation ausge setzt werden. 2. The method of claim 1, characterized in that the thin selective layers of aluminum are protected before the second process step, either prior to oxidation by atmospheric oxygen or out of the oxidation begins.
  3. 3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß die selektive Aufbringung dünner Aluminiumschichten im ersten Schritt durch lokale laserunterstützte Be schichtung aus der Gasphase, durch thermische Bedampfung unter Einsatz von Masken oder durch Metallisierung er folgt. 3. The method of claim 1 or 2, characterized in that the selective application of thin aluminum layers in the first step by local laser-assisted Be coating from the gas phase, by thermal vapor deposition using masks, or by metallization he follows.
DE19924220158 1992-06-19 1992-06-19 Selective precipitation of aluminium structures from the gas phase - using locally applied thin aluminium@ layers as catalysts in the pptn. process Withdrawn DE4220158A1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010127764A2 (en) * 2009-05-05 2010-11-11 Universitaet Stuttgart Method for contacting a semiconductor substrate
WO2014022635A1 (en) * 2012-08-03 2014-02-06 Stuart Martin A Slab laser and amplifier and method of use

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DE1614773A1 (en) * 1967-02-25 1970-12-10 Telefunken Patent Method of contacting of semiconductor devices
US4615904A (en) * 1982-06-01 1986-10-07 Massachusetts Institute Of Technology Maskless growth of patterned films
WO1986006756A1 (en) * 1985-05-03 1986-11-20 American Telephone & Telegraph Company Method of making a device comprising a patterned aluminum layer
DE2920384C2 (en) * 1978-05-25 1987-03-26 Deutsche Itt Industries Gmbh, 7800 Freiburg, De
DE3815512A1 (en) * 1988-05-06 1989-11-16 Telefunken Electronic Gmbh Solar cell with reduced effective recombination rate of the charge carriers
WO1989012321A1 (en) * 1988-06-10 1989-12-14 Mobil Solar Energy Corporation An improved method of fabricating contacts for solar cells
US5010040A (en) * 1988-12-30 1991-04-23 Mobil Solar Energy Corporation Method of fabricating solar cells
US5091210A (en) * 1989-09-26 1992-02-25 Canon Kabushiki Kaisha Plasma CVD of aluminum films

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Publication number Priority date Publication date Assignee Title
DE1614773A1 (en) * 1967-02-25 1970-12-10 Telefunken Patent Method of contacting of semiconductor devices
DE2920384C2 (en) * 1978-05-25 1987-03-26 Deutsche Itt Industries Gmbh, 7800 Freiburg, De
US4615904A (en) * 1982-06-01 1986-10-07 Massachusetts Institute Of Technology Maskless growth of patterned films
WO1986006756A1 (en) * 1985-05-03 1986-11-20 American Telephone & Telegraph Company Method of making a device comprising a patterned aluminum layer
DE3815512A1 (en) * 1988-05-06 1989-11-16 Telefunken Electronic Gmbh Solar cell with reduced effective recombination rate of the charge carriers
WO1989012321A1 (en) * 1988-06-10 1989-12-14 Mobil Solar Energy Corporation An improved method of fabricating contacts for solar cells
US5010040A (en) * 1988-12-30 1991-04-23 Mobil Solar Energy Corporation Method of fabricating solar cells
US5091210A (en) * 1989-09-26 1992-02-25 Canon Kabushiki Kaisha Plasma CVD of aluminum films

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N.N.: Aluminum Surges Ahead at VMIC. In: SOLID STATE TECHNOLOGY, Aug.1991, S.47-48 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010127764A2 (en) * 2009-05-05 2010-11-11 Universitaet Stuttgart Method for contacting a semiconductor substrate
WO2010127764A3 (en) * 2009-05-05 2011-04-21 Universitaet Stuttgart Method for contacting a semiconductor substrate
US9246299B2 (en) 2011-08-04 2016-01-26 Martin A. Stuart Slab laser and amplifier
US9287112B2 (en) 2011-08-04 2016-03-15 Martin A. Stuart Slab laser and amplifier and method of use
US9525262B2 (en) 2011-08-04 2016-12-20 Martin A. Stuart Slab laser and amplifier and method of use
WO2014022635A1 (en) * 2012-08-03 2014-02-06 Stuart Martin A Slab laser and amplifier and method of use
RU2650807C2 (en) * 2012-08-03 2018-04-17 Мартин А. СТЮАРТ Slab laser and amplifier and method of use

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