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Flüssigkristall-Anzeigevorrichtung.

Info

Publication number
DE3887447D1
DE3887447D1 DE19883887447 DE3887447A DE3887447D1 DE 3887447 D1 DE3887447 D1 DE 3887447D1 DE 19883887447 DE19883887447 DE 19883887447 DE 3887447 A DE3887447 A DE 3887447A DE 3887447 D1 DE3887447 D1 DE 3887447D1
Authority
DE
Grant status
Grant
Patent type
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19883887447
Other languages
English (en)
Other versions
DE3887447T2 (de )
Inventor
Hiroaki Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centro Ricerche Fiat SpA
Sharp Corp
Original Assignee
Centro Ricerche Fiat SpA
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742Thin film unipolar transistors
    • H01L29/6675Amorphous silicon or polysilicon transistors
    • H01L29/66765Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
DE19883887447 1987-11-06 1988-09-30 Flüssigkristall-Anzeigevorrichtung. Expired - Fee Related DE3887447D1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28138387A JP2596949B2 (ja) 1987-11-06 1987-11-06 液晶表示装置の製造方法

Publications (1)

Publication Number Publication Date
DE3887447D1 true DE3887447D1 (de) 1994-03-10

Family

ID=17638373

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19883887447 Expired - Lifetime DE3887447T2 (de) 1987-11-06 1988-09-30 Flüssigkristall-Anzeigevorrichtung.
DE19883887447 Expired - Fee Related DE3887447D1 (de) 1987-11-06 1988-09-30 Flüssigkristall-Anzeigevorrichtung.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE19883887447 Expired - Lifetime DE3887447T2 (de) 1987-11-06 1988-09-30 Flüssigkristall-Anzeigevorrichtung.

Country Status (4)

Country Link
US (1) US4961629A (de)
JP (1) JP2596949B2 (de)
DE (2) DE3887447T2 (de)
EP (1) EP0315319B1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5166086A (en) * 1985-03-29 1992-11-24 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing same
EP0196915B1 (de) * 1985-03-29 1991-08-14 Matsushita Electric Industrial Co., Ltd. Dünnschicht-Transistorenanordnung und Methode zu deren Herstellung
JPH03161938A (en) * 1989-11-20 1991-07-11 Seiko Instr Inc Manufacture of thin-film transistor
US5058995A (en) * 1990-03-15 1991-10-22 Thomson Consumer Electronics, Inc. Pixel electrode structure for liquid crystal display devices
JP2650780B2 (ja) * 1990-11-30 1997-09-03 シャープ株式会社 アクティブマトリクス基板
US5499124A (en) * 1990-12-31 1996-03-12 Vu; Duy-Phach Polysilicon transistors formed on an insulation layer which is adjacent to a liquid crystal material
US5256562A (en) * 1990-12-31 1993-10-26 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US5666175A (en) * 1990-12-31 1997-09-09 Kopin Corporation Optical systems for displays
US5206749A (en) 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
US6593978B2 (en) * 1990-12-31 2003-07-15 Kopin Corporation Method for manufacturing active matrix liquid crystal displays
US5528397A (en) * 1991-12-03 1996-06-18 Kopin Corporation Single crystal silicon transistors for display panels
US5362671A (en) * 1990-12-31 1994-11-08 Kopin Corporation Method of fabricating single crystal silicon arrayed devices for display panels
US6143582A (en) * 1990-12-31 2000-11-07 Kopin Corporation High density electronic circuit modules
US6627953B1 (en) 1990-12-31 2003-09-30 Kopin Corporation High density electronic circuit modules
US5376561A (en) 1990-12-31 1994-12-27 Kopin Corporation High density electronic circuit modules
JPH05243579A (ja) * 1992-02-28 1993-09-21 Canon Inc 半導体装置
JP3587537B2 (ja) 1992-12-09 2004-11-10 株式会社半導体エネルギー研究所 半導体装置
US5600459A (en) * 1993-12-20 1997-02-04 Roy; Howard S. Multiple-shutter flat-panel display having individually controlled pixels and method for making same
JP5671948B2 (ja) 2010-11-04 2015-02-18 三菱電機株式会社 薄膜トランジスタアレイ基板、及び液晶表示装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61161764A (en) * 1985-01-11 1986-07-22 Nec Corp Manufacture of thin film transistor
JPH0422498B2 (de) * 1985-02-20 1992-04-17 Sharp Kk
US4686553A (en) * 1985-08-02 1987-08-11 General Electric Company Low capacitance amorphous silicon field effect transistor structure
JPH0563026B2 (de) * 1986-03-27 1993-09-09 Sharp Kk
US4857907A (en) * 1986-04-30 1989-08-15 501 Sharp Kabushiki Kaisha Liquid-crystal display device
JPS62265756A (en) * 1986-05-14 1987-11-18 Oki Electric Ind Co Ltd Thin film transistor matrix
US4778258A (en) * 1987-10-05 1988-10-18 General Electric Company Protective tab structure for use in the fabrication of matrix addressed thin film transistor liquid crystal displays

Also Published As

Publication number Publication date Type
US4961629A (en) 1990-10-09 grant
JPH01123475A (en) 1989-05-16 application
EP0315319A2 (de) 1989-05-10 application
JP2596949B2 (ja) 1997-04-02 grant
EP0315319B1 (de) 1994-01-26 grant
EP0315319A3 (en) 1990-07-25 application
DE3887447T2 (de) 1994-05-26 grant

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Legal Events

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8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8339 Ceased/non-payment of the annual fee