DE3880699D1 - Thyristor vom nulldurchgangstyp. - Google Patents
Thyristor vom nulldurchgangstyp.Info
- Publication number
- DE3880699D1 DE3880699D1 DE8888100533T DE3880699T DE3880699D1 DE 3880699 D1 DE3880699 D1 DE 3880699D1 DE 8888100533 T DE8888100533 T DE 8888100533T DE 3880699 T DE3880699 T DE 3880699T DE 3880699 D1 DE3880699 D1 DE 3880699D1
- Authority
- DE
- Germany
- Prior art keywords
- thyristor
- zero
- crossing type
- crossing
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Thyristor Switches And Gates (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62014231A JPS63182861A (ja) | 1987-01-26 | 1987-01-26 | ゼロクロス型サイリスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3880699D1 true DE3880699D1 (de) | 1993-06-09 |
DE3880699T2 DE3880699T2 (de) | 1993-08-19 |
Family
ID=11855298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888100533T Expired - Lifetime DE3880699T2 (de) | 1987-01-26 | 1988-01-15 | Thyristor vom nulldurchgangstyp. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4956690A (de) |
EP (1) | EP0276703B1 (de) |
JP (1) | JPS63182861A (de) |
DE (1) | DE3880699T2 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5381026A (en) | 1990-09-17 | 1995-01-10 | Kabushiki Kaisha Toshiba | Insulated-gate thyristor |
JP2782638B2 (ja) * | 1990-12-28 | 1998-08-06 | 富士電機株式会社 | Mosコントロールサイリスタ |
US5294816A (en) * | 1992-06-10 | 1994-03-15 | North Carolina State University At Raleigh | Unit cell arrangement for emitter switched thyristor with base resistance control |
US5198687A (en) * | 1992-07-23 | 1993-03-30 | Baliga Bantval J | Base resistance controlled thyristor with single-polarity turn-on and turn-off control |
FR2697674B1 (fr) * | 1992-10-29 | 1995-01-13 | Sgs Thomson Microelectronics | Thyristor et assemblage de thyristors à cathode commune. |
US5293054A (en) * | 1992-11-23 | 1994-03-08 | North Carolina State University At Raleigh | Emitter switched thyristor without parasitic thyristor latch-up susceptibility |
US5241194A (en) * | 1992-12-14 | 1993-08-31 | North Carolina State University At Raleigh | Base resistance controlled thyristor with integrated single-polarity gate control |
US5306930A (en) * | 1992-12-14 | 1994-04-26 | North Carolina State University At Raleigh | Emitter switched thyristor with buried dielectric layer |
US5396087A (en) * | 1992-12-14 | 1995-03-07 | North Carolina State University | Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up |
FR2708811B1 (fr) * | 1993-08-06 | 1995-10-20 | Sgs Thomson Microelectronics | Thyristor à amplification de gachette à courant de maintien accru. |
US5493134A (en) * | 1994-11-14 | 1996-02-20 | North Carolina State University | Bidirectional AC switching device with MOS-gated turn-on and turn-off control |
FR2734429B1 (fr) * | 1995-05-19 | 1997-08-01 | Sgs Thomson Microelectronics | Module interrupteur et d'alimentation-application au demarrage d'un tube fluorescent |
JP4126872B2 (ja) * | 2000-12-12 | 2008-07-30 | サンケン電気株式会社 | 定電圧ダイオード |
US10741548B2 (en) * | 2015-04-13 | 2020-08-11 | Infineon Technologies Ag | Protection devices with trigger devices and methods of formation thereof |
DE102016204699B4 (de) | 2015-04-13 | 2020-07-30 | Infineon Technologies Ag | Schutzvorrichtungen mit Trigger-Vorrichtungen und Verfahren zu deren Bildung |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1193465A (en) * | 1967-08-09 | 1970-06-03 | Associated Semiconductor Mft | Improvements in Semiconductor Integrated Circuits |
US4050083A (en) * | 1976-09-22 | 1977-09-20 | Cutler-Hammer, Inc. | Integrated thermally sensitive power switching semiconductor device, including a thermally self-protected version |
US4529998A (en) * | 1977-12-14 | 1985-07-16 | Eaton Corporation | Amplified gate thyristor with non-latching amplified control transistors across base layers |
JPS56148864A (en) * | 1980-04-21 | 1981-11-18 | Nec Corp | Thyristor |
JPS6074678A (ja) * | 1983-09-30 | 1985-04-26 | Toshiba Corp | 半導体装置 |
JPH0697692B2 (ja) * | 1984-01-17 | 1994-11-30 | 株式会社東芝 | 半導体装置 |
-
1987
- 1987-01-26 JP JP62014231A patent/JPS63182861A/ja active Granted
-
1988
- 1988-01-15 EP EP88100533A patent/EP0276703B1/de not_active Expired - Lifetime
- 1988-01-15 DE DE8888100533T patent/DE3880699T2/de not_active Expired - Lifetime
-
1990
- 1990-01-26 US US07/471,025 patent/US4956690A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS63182861A (ja) | 1988-07-28 |
EP0276703B1 (de) | 1993-05-05 |
JPH0449266B2 (de) | 1992-08-11 |
EP0276703A3 (en) | 1988-11-02 |
DE3880699T2 (de) | 1993-08-19 |
EP0276703A2 (de) | 1988-08-03 |
US4956690A (en) | 1990-09-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) |