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Hall-effekt-element.

Info

Publication number
DE3860045D1
DE3860045D1 DE19883860045 DE3860045A DE3860045D1 DE 3860045 D1 DE3860045 D1 DE 3860045D1 DE 19883860045 DE19883860045 DE 19883860045 DE 3860045 A DE3860045 A DE 3860045A DE 3860045 D1 DE3860045 D1 DE 3860045D1
Authority
DE
Grant status
Grant
Patent type
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE19883860045
Other languages
English (en)
Inventor
Richard W Nelson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used
    • H03K17/90Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used using galvano-magnetic devices, e.g. Hall effect devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/22Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using galvano-magnetic effects, e.g. Hall effects; using similar magnetic field effects
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/14Modifications for compensating variations of physical values, e.g. of temperature
DE19883860045 1987-03-30 1988-03-25 Hall-effekt-element. Expired - Lifetime DE3860045D1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US07032114 US4760285A (en) 1987-03-30 1987-03-30 Hall effect device with epitaxal layer resistive means for providing temperature independent sensitivity

Publications (1)

Publication Number Publication Date
DE3860045D1 true DE3860045D1 (de) 1990-04-05

Family

ID=21863181

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19883860045 Expired - Lifetime DE3860045D1 (de) 1987-03-30 1988-03-25 Hall-effekt-element.

Country Status (5)

Country Link
US (1) US4760285A (de)
JP (1) JPS641288A (de)
CA (1) CA1269761A (de)
DE (1) DE3860045D1 (de)
EP (1) EP0285016B1 (de)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5017804A (en) * 1987-07-23 1991-05-21 Siliconix Incorporated Hall sensing of bond wire current
DE3879187D1 (de) * 1988-04-21 1993-04-15 Landis & Gyr Betriebs Ag Integrierte halbleiterschaltung mit einem magnetfeldsensor aus halbleitermaterial.
US5068606A (en) * 1989-09-19 1991-11-26 Kawate Keith W Two wire modulated output current circuit for use with a magnetoresistive bridge speed/position sensor
US5055768A (en) * 1990-04-05 1991-10-08 Honeywell Inc. Temperature compensator for hall effect circuit
US5177657A (en) * 1991-05-16 1993-01-05 Felchar Manufacturing Corporation Ground fault interruptor circuit with electronic latch
DE59109002D1 (de) * 1991-07-31 1998-07-09 Micronas Intermetall Gmbh Hallsensor mit Selbstkompensation
JP2988795B2 (ja) * 1992-05-29 1999-12-13 シャープ株式会社 受光増幅装置
US5444369A (en) * 1993-02-18 1995-08-22 Kearney-National, Inc. Magnetic rotational position sensor with improved output linearity
JPH06289111A (ja) * 1993-04-02 1994-10-18 Stanley Electric Co Ltd ホール素子の駆動回路
US5543988A (en) * 1993-04-30 1996-08-06 International Business Machines Corporation Hall sensor with high spatial resolution in two directions concurrently
US6104231A (en) * 1994-07-19 2000-08-15 Honeywell International Inc. Temperature compensation circuit for a hall effect element
US6232832B1 (en) 1994-07-19 2001-05-15 Honeywell International Inc Circuit for limiting an output voltage to a percent of a variable supply voltage
US5497084A (en) * 1995-03-03 1996-03-05 Honeywell Inc. Geartooth sensor with means for selecting a threshold magnitude as a function of the average and minimum values of a signal of magnetic field strength
US5694040A (en) * 1996-07-02 1997-12-02 Honeywell Inc. Magnetic sensor circuit with two magnetically sensitive devices
US6154027A (en) * 1997-10-20 2000-11-28 Analog Devices, Inc. Monolithic magnetic sensor having externally adjustable temperature compensation
US6437634B1 (en) * 1997-11-27 2002-08-20 Nec Corporation Semiconductor circuit in which distortion caused by change in ambient temperature is compensated
DE10032527C1 (de) * 2000-07-05 2001-12-06 Infineon Technologies Ag Temperaturkompensationsschaltung für ein Hall-Element
US6879145B1 (en) 2002-02-15 2005-04-12 Larry L. Harris Voltage isolation buffer with hall effect magnetic field sensor
US7265543B2 (en) * 2003-04-15 2007-09-04 Honeywell International Inc. Integrated set/reset driver and magneto-resistive sensor
US7061311B2 (en) * 2004-07-23 2006-06-13 Honeywell International Inc. Differential amplifier for dual bridge transducer
KR100608111B1 (ko) * 2005-02-07 2006-07-26 삼성전자주식회사 센싱온도를 조절할 수 있는 온도센서
JP4624851B2 (ja) * 2005-05-17 2011-02-02 株式会社東海理化電機製作所 ワイパ用制御装置及びワイパ用制御装置における補正方法
US7265539B2 (en) * 2005-06-09 2007-09-04 Ford Motor Company Calibration of a hall effect sensor
US7405552B2 (en) * 2006-01-04 2008-07-29 Micron Technology, Inc. Semiconductor temperature sensor with high sensitivity
US7382120B2 (en) * 2006-04-26 2008-06-03 Honeywell International Inc. Rotary position sensor with rectangular magnet and hall sensors placed in association with the surface of the magnet
US7923996B2 (en) 2008-02-26 2011-04-12 Allegro Microsystems, Inc. Magnetic field sensor with automatic sensitivity adjustment
US7772661B2 (en) * 2008-07-23 2010-08-10 Honeywell International Inc. Hall-effect magnetic sensors with improved magnetic responsivity and methods for manufacturing the same
DE112010000848T5 (de) 2009-02-17 2012-06-28 Allegro Microsystems, Inc. Schaltungen und Verfahren zum Erzeugen eines Selbsttests eines Magnetfeldsensors
US8542010B2 (en) * 2009-07-22 2013-09-24 Allegro Microsystems, Llc Circuits and methods for generating a diagnostic mode of operation in a magnetic field sensor
JP5411818B2 (ja) * 2010-08-26 2014-02-12 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
US9013167B2 (en) 2010-11-09 2015-04-21 Texas Instruments Incorporated Hall effect device having voltage based biasing for temperature compensation
US8680846B2 (en) 2011-04-27 2014-03-25 Allegro Microsystems, Llc Circuits and methods for self-calibrating or self-testing a magnetic field sensor
US8604777B2 (en) 2011-07-13 2013-12-10 Allegro Microsystems, Llc Current sensor with calibration for a current divider configuration
US9201122B2 (en) 2012-02-16 2015-12-01 Allegro Microsystems, Llc Circuits and methods using adjustable feedback for self-calibrating or self-testing a magnetic field sensor with an adjustable time constant
US9817078B2 (en) 2012-05-10 2017-11-14 Allegro Microsystems Llc Methods and apparatus for magnetic sensor having integrated coil
US9383425B2 (en) 2012-12-28 2016-07-05 Allegro Microsystems, Llc Methods and apparatus for a current sensor having fault detection and self test functionality
US9810519B2 (en) 2013-07-19 2017-11-07 Allegro Microsystems, Llc Arrangements for magnetic field sensors that act as tooth detectors
US9645220B2 (en) 2014-04-17 2017-05-09 Allegro Microsystems, Llc Circuits and methods for self-calibrating or self-testing a magnetic field sensor using phase discrimination
US9735773B2 (en) 2014-04-29 2017-08-15 Allegro Microsystems, Llc Systems and methods for sensing current through a low-side field effect transistor
US9739846B2 (en) 2014-10-03 2017-08-22 Allegro Microsystems, Llc Magnetic field sensors with self test
US9720054B2 (en) 2014-10-31 2017-08-01 Allegro Microsystems, Llc Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element
US9719806B2 (en) 2014-10-31 2017-08-01 Allegro Microsystems, Llc Magnetic field sensor for sensing a movement of a ferromagnetic target object
US9823090B2 (en) 2014-10-31 2017-11-21 Allegro Microsystems, Llc Magnetic field sensor for sensing a movement of a target object
US9823092B2 (en) 2014-10-31 2017-11-21 Allegro Microsystems, Llc Magnetic field sensor providing a movement detector
US9841485B2 (en) 2014-11-14 2017-12-12 Allegro Microsystems, Llc Magnetic field sensor having calibration circuitry and techniques
US9804249B2 (en) 2014-11-14 2017-10-31 Allegro Microsystems, Llc Dual-path analog to digital converter
US9638764B2 (en) 2015-04-08 2017-05-02 Allegro Microsystems, Llc Electronic circuit for driving a hall effect element with a current compensated for substrate stress
US9851417B2 (en) 2015-07-28 2017-12-26 Allegro Microsystems, Llc Structure and system for simultaneous sensing a magnetic field and mechanical stress

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5220317B2 (de) * 1974-12-25 1977-06-02
JPS5636177A (en) * 1979-08-31 1981-04-09 Nippon Denso Co Ltd Temperature compensation circuit for hall element
US4371837A (en) * 1979-11-13 1983-02-01 American Can Company Temperature compensated input power and output offset circuits for a hall effect transducer
EP0162165A3 (de) * 1983-06-10 1986-07-16 Texas Instruments Incorporated Hall-Effekt-Bauelement und Verfahren zu seiner Herstellung
DE3322942C2 (de) * 1983-06-25 1986-03-20 Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De
DE3561267D1 (de) * 1984-04-18 1988-02-04 Landis & Gyr Ag Method and circuit for the temperature compensation of a hall element
US4929993A (en) * 1985-05-22 1990-05-29 Lgz Landis & Gyr Zug Ag Hall element device with depletion region protection barrier

Also Published As

Publication number Publication date Type
US4760285A (en) 1988-07-26 grant
CA1269761A1 (de) grant
EP0285016B1 (de) 1990-02-28 grant
EP0285016A1 (de) 1988-10-05 application
JPS641288A (en) 1989-01-05 application
CA1269761A (en) 1990-05-29 grant

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