DE3850582D1 - Gallium-Nitrid Halbleiter-Lumisneszenzdiode sowie Verfahren zu deren Herstellung. - Google Patents
Gallium-Nitrid Halbleiter-Lumisneszenzdiode sowie Verfahren zu deren Herstellung.Info
- Publication number
- DE3850582D1 DE3850582D1 DE3850582T DE3850582T DE3850582D1 DE 3850582 D1 DE3850582 D1 DE 3850582D1 DE 3850582 T DE3850582 T DE 3850582T DE 3850582 T DE3850582 T DE 3850582T DE 3850582 D1 DE3850582 D1 DE 3850582D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- nitride semiconductor
- gallium nitride
- luminescence diode
- semiconductor luminescence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2112487A JPH079999B2 (ja) | 1987-01-31 | 1987-01-31 | 窒化ガリウム系化合物半導体発光素子 |
JP62021126A JPS63188938A (ja) | 1987-01-31 | 1987-01-31 | 窒化ガリウム系化合物半導体の気相成長方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3850582D1 true DE3850582D1 (de) | 1994-08-18 |
DE3850582T2 DE3850582T2 (de) | 1994-11-10 |
Family
ID=26358145
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19883850582 Expired - Lifetime DE3850582T2 (de) | 1987-01-31 | 1988-01-28 | Gallium-Nitrid Halbleiter-Lumisneszenzdiode sowie Verfahren zu deren Herstellung. |
DE19883852402 Expired - Lifetime DE3852402T2 (de) | 1987-01-31 | 1988-01-28 | Galliumnitridartige Halbleiterverbindung und daraus bestehende lichtemittierende Vorrichtung sowie Verfahren zu deren Herstellung. |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19883852402 Expired - Lifetime DE3852402T2 (de) | 1987-01-31 | 1988-01-28 | Galliumnitridartige Halbleiterverbindung und daraus bestehende lichtemittierende Vorrichtung sowie Verfahren zu deren Herstellung. |
Country Status (2)
Country | Link |
---|---|
EP (2) | EP0277597B1 (de) |
DE (2) | DE3850582T2 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2704181B2 (ja) * | 1989-02-13 | 1998-01-26 | 日本電信電話株式会社 | 化合物半導体単結晶薄膜の成長方法 |
JP3026087B2 (ja) * | 1989-03-01 | 2000-03-27 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体の気相成長方法 |
US6830992B1 (en) | 1990-02-28 | 2004-12-14 | Toyoda Gosei Co., Ltd. | Method for manufacturing a gallium nitride group compound semiconductor |
US5278433A (en) * | 1990-02-28 | 1994-01-11 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer |
DE69126152T2 (de) * | 1990-02-28 | 1997-11-13 | Toyoda Gosei Kk | Lichtemittierende Halbleitervorrichtung mit Gallium-Nitrid-Verbindung |
US6362017B1 (en) | 1990-02-28 | 2002-03-26 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
JP3078821B2 (ja) * | 1990-05-30 | 2000-08-21 | 豊田合成株式会社 | 半導体のドライエッチング方法 |
US5281830A (en) * | 1990-10-27 | 1994-01-25 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
US7235819B2 (en) | 1991-03-18 | 2007-06-26 | The Trustees Of Boston University | Semiconductor device having group III nitride buffer layer and growth layers |
JP3352712B2 (ja) * | 1991-12-18 | 2002-12-03 | 浩 天野 | 窒化ガリウム系半導体素子及びその製造方法 |
EP1313153A3 (de) * | 1992-07-23 | 2005-05-04 | Toyoda Gosei Co., Ltd. | Lichtemittierende Vorrichtung aus einer Verbindung der Galliumnitridgruppe |
JPH06295862A (ja) * | 1992-11-20 | 1994-10-21 | Mitsubishi Electric Corp | 化合物半導体製造装置及び有機金属材料容器 |
US5739554A (en) * | 1995-05-08 | 1998-04-14 | Cree Research, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
JPH08316582A (ja) * | 1995-05-19 | 1996-11-29 | Nec Corp | 半導体レーザ |
AU6946196A (en) * | 1995-09-18 | 1997-04-09 | Hitachi Limited | Semiconductor material, method of producing the semiconductor material, and semiconductor device |
DE19640594B4 (de) * | 1996-10-01 | 2016-08-04 | Osram Gmbh | Bauelement |
CN100428410C (zh) * | 2002-01-09 | 2008-10-22 | 南京大学 | 一种改进氢化物气相外延生长GaN材料均匀性的方法和装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4404265A (en) * | 1969-10-01 | 1983-09-13 | Rockwell International Corporation | Epitaxial composite and method of making |
US3683240A (en) * | 1971-07-22 | 1972-08-08 | Rca Corp | ELECTROLUMINESCENT SEMICONDUCTOR DEVICE OF GaN |
US4152182A (en) * | 1978-05-15 | 1979-05-01 | International Business Machines Corporation | Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide |
JPS56150880A (en) * | 1980-04-23 | 1981-11-21 | Matsushita Electric Ind Co Ltd | Gallium nitride light emitting element chip and manufacture thereof |
JPS6055996B2 (ja) * | 1979-12-05 | 1985-12-07 | 松下電器産業株式会社 | 電場発光半導体装置 |
JPS57102081A (en) * | 1980-12-17 | 1982-06-24 | Matsushita Electric Ind Co Ltd | Manufacture of luminous element |
FR2514566A1 (fr) * | 1982-02-02 | 1983-04-15 | Bagratishvili Givi | Dispositif emetteur de lumiere semi-conducteur a base de nitrure de gallium et procede de fabrication dudit dispositif |
JPS59228776A (ja) * | 1983-06-10 | 1984-12-22 | Nippon Telegr & Teleph Corp <Ntt> | 半導体ヘテロ接合素子 |
JPS60175468A (ja) * | 1984-02-21 | 1985-09-09 | Matsushita Electric Ind Co Ltd | 窒化ガリウム半導体装置の製造方法 |
-
1988
- 1988-01-28 EP EP88101267A patent/EP0277597B1/de not_active Expired - Lifetime
- 1988-01-28 DE DE19883850582 patent/DE3850582T2/de not_active Expired - Lifetime
- 1988-01-28 DE DE19883852402 patent/DE3852402T2/de not_active Expired - Lifetime
- 1988-01-28 EP EP91113265A patent/EP0460710B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0277597B1 (de) | 1994-07-13 |
EP0460710A2 (de) | 1991-12-11 |
DE3852402T2 (de) | 1995-05-04 |
EP0460710A3 (de) | 1991-12-18 |
DE3852402D1 (de) | 1995-01-19 |
EP0277597A3 (en) | 1989-09-20 |
EP0460710B1 (de) | 1994-12-07 |
EP0277597A2 (de) | 1988-08-10 |
DE3850582T2 (de) | 1994-11-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |