DE3842099C2 - - Google Patents
Info
- Publication number
- DE3842099C2 DE3842099C2 DE19883842099 DE3842099A DE3842099C2 DE 3842099 C2 DE3842099 C2 DE 3842099C2 DE 19883842099 DE19883842099 DE 19883842099 DE 3842099 A DE3842099 A DE 3842099A DE 3842099 C2 DE3842099 C2 DE 3842099C2
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- particles
- silane
- zone
- reaction zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002245 particle Substances 0.000 claims description 104
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 103
- 238000006243 chemical reaction Methods 0.000 claims description 87
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 77
- 229910000077 silane Inorganic materials 0.000 claims description 77
- 229910052710 silicon Inorganic materials 0.000 claims description 59
- 239000010703 silicon Substances 0.000 claims description 59
- 239000011856 silicon-based particle Substances 0.000 claims description 49
- 239000011863 silicon-based powder Substances 0.000 claims description 42
- 238000000354 decomposition reaction Methods 0.000 claims description 36
- 238000005243 fluidization Methods 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 238000000197 pyrolysis Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 155
- 239000000047 product Substances 0.000 description 23
- 229910052739 hydrogen Inorganic materials 0.000 description 13
- 239000001257 hydrogen Substances 0.000 description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 11
- 239000012159 carrier gas Substances 0.000 description 11
- 239000006227 byproduct Substances 0.000 description 8
- 230000002829 reductive effect Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- HICCMIMHFYBSJX-UHFFFAOYSA-N [SiH4].[Cl] Chemical compound [SiH4].[Cl] HICCMIMHFYBSJX-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
- B01J8/24—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Silicon Compounds (AREA)
- Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13249087A | 1987-12-14 | 1987-12-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3842099A1 DE3842099A1 (de) | 1989-06-22 |
| DE3842099C2 true DE3842099C2 (enrdf_load_stackoverflow) | 1992-11-05 |
Family
ID=22454295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19883842099 Granted DE3842099A1 (de) | 1987-12-14 | 1988-12-14 | Wirbelschichtreaktor zur herstellung von polykristallinem silicium |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2562360B2 (enrdf_load_stackoverflow) |
| CA (1) | CA1336937C (enrdf_load_stackoverflow) |
| DE (1) | DE3842099A1 (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10060469A1 (de) * | 2000-12-06 | 2002-07-04 | Solarworld Ag | Verfahren zur Herstellung von hochreinem, granularem Silizium |
| DE102004027563A1 (de) * | 2004-06-04 | 2005-12-22 | Joint Solar Silicon Gmbh & Co. Kg | Silizium sowie Verfahren zu dessen Herstellung |
| DE202008013839U1 (de) | 2008-12-23 | 2009-04-09 | G+R Polysilicon Gmbh | Rohrwärmetauscher für eine Einrichtung zur Herstellung von Polysilizium |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3910343A1 (de) * | 1988-03-31 | 1989-10-12 | Union Carbide Corp | Aussenbeheizter wirbelschicht-reaktor |
| DE102004010055A1 (de) * | 2004-03-02 | 2005-09-22 | Degussa Ag | Verfahren zur Herstellung von Silicium |
| US8534904B2 (en) * | 2010-03-10 | 2013-09-17 | Lord Ltd., Lp | Apparatus for restarting a gas-solids contactor |
| DE102013210039A1 (de) * | 2013-05-29 | 2014-12-04 | Wacker Chemie Ag | Verfahren zur Herstellung von granularem Polysilicium |
| CN116272693B (zh) * | 2023-01-31 | 2025-09-26 | 内蒙古鄂尔多斯多晶硅业有限公司 | 一种适用于冷氢化流化床的硅粉颗粒选取方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4314525A (en) * | 1980-03-03 | 1982-02-09 | California Institute Of Technology | Fluidized bed silicon deposition from silane |
-
1988
- 1988-12-14 DE DE19883842099 patent/DE3842099A1/de active Granted
- 1988-12-14 JP JP63313978A patent/JP2562360B2/ja not_active Expired - Lifetime
- 1988-12-14 CA CA 585897 patent/CA1336937C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10060469A1 (de) * | 2000-12-06 | 2002-07-04 | Solarworld Ag | Verfahren zur Herstellung von hochreinem, granularem Silizium |
| DE102004027563A1 (de) * | 2004-06-04 | 2005-12-22 | Joint Solar Silicon Gmbh & Co. Kg | Silizium sowie Verfahren zu dessen Herstellung |
| DE202008013839U1 (de) | 2008-12-23 | 2009-04-09 | G+R Polysilicon Gmbh | Rohrwärmetauscher für eine Einrichtung zur Herstellung von Polysilizium |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3842099A1 (de) | 1989-06-22 |
| CA1336937C (en) | 1995-09-12 |
| JPH026392A (ja) | 1990-01-10 |
| JP2562360B2 (ja) | 1996-12-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8125 | Change of the main classification |
Ipc: B01J 8/24 |
|
| 8125 | Change of the main classification |
Ipc: C01B 33/027 |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: ADVANCED SILICON MATERIALS INC., MOSES LAKE, WASH. |
|
| 8328 | Change in the person/name/address of the agent |
Free format text: FRHR. VON PECHMANN, E., DIPL.-CHEM. DR.RER.NAT., 8000 MUENCHEN BEHRENS, D., DR.-ING., 81541 MUENCHEN BRANDES, J., DIPL.-CHEM. DR.RER.NAT. GOETZ, R., DIPL.-ING. DIPL.-WIRTSCH.-ING. VON HELLFELD, A., DIPL.-PHYS. DR.RER.NAT., PAT.-ANWAELTE WUERTENBERGER, G., RECHTSANW., 8000 MUENCHEN |
|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: ADVANCED SILICON MATERIALS LLC,(N.D.GES.D.STAATES |