DE3811313C2 - - Google Patents

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Publication number
DE3811313C2
DE3811313C2 DE3811313A DE3811313A DE3811313C2 DE 3811313 C2 DE3811313 C2 DE 3811313C2 DE 3811313 A DE3811313 A DE 3811313A DE 3811313 A DE3811313 A DE 3811313A DE 3811313 C2 DE3811313 C2 DE 3811313C2
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Germany
Prior art keywords
substrate
housing
characterized
housing according
thick
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3811313A
Other languages
German (de)
Other versions
DE3811313A1 (en
Inventor
Horst Dipl.-Ing. 8206 Bruckmuehl De Riedelbauch
Siegfried 8016 Feldkirchen De Guber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TEMIC TELEFUNKEN MICROELECTRONIC GMBH, 74072 HEILB
Original Assignee
Airbus Defence and Space GmbH
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Publication date
Application filed by Airbus Defence and Space GmbH filed Critical Airbus Defence and Space GmbH
Priority to DE3811313A priority Critical patent/DE3811313C2/de
Publication of DE3811313A1 publication Critical patent/DE3811313A1/en
Application granted granted Critical
Publication of DE3811313C2 publication Critical patent/DE3811313C2/de
Anticipated expiration legal-status Critical
Application status is Expired - Fee Related legal-status Critical

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Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K5/00Casings, cabinets or drawers for electric apparatus
    • H05K5/0091Housing specially adapted for small components
    • H05K5/0095Housing specially adapted for small components hermetically-sealed
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/055Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5384Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of H01L27/00 - H01L49/00 and H01L51/00, e.g. forming hybrid circuits
    • H01L25/165Containers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0216Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/0218Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01012Magnesium [Mg]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01014Silicon [Si]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Description

Die Erfindung betrifft ein Gehäuse für das hermetische Kapseln von Hybrid-Schaltungen, insbesondere für elektronische oder optronische Dickschichtschaltungen auf einem isolierten Substrat, das zugleich den Gehäuseboden bildet, und an seinem äußeren Randbereich eine oder mehrere Schichten trägt, von denen wenigstens eine aus einem im thermischen Aus dehnungskoeffizienten dem Substrat angepaßten Material zum Verbinden mit einem metallischen Bauteil besteht und daß auf dem Substrat auf der dem Innenraum abgekehrten Seite eine Metallschicht aufgebracht ist. The invention relates to a housing for the hermetic capsules of hybrid circuits, particularly for electronic or optronic thick-film circuits on an insulated substrate, which also forms the housing bottom, and carries at its outer edge area of ​​one or more layers of which at least one of an in thermal consisting of coefficient of expansion matched to the substrate material for connection to a metal component and that a metal layer is deposited on the substrate on the side remote from the interior side.

Derartige hermetisch und elektromagnetisch dichte Gehäuse für Hybridbausteine finden Anwendung vor allem in der Flugzeug- und Raumfahrtelektronik sowie in der Wehrtechnik. Such hermetic and electromagnetically sealed packages for hybrid devices are used mainly in the aircraft and aerospace electronics, and in defense technology. Es ist bekannt, Hybrid-Schaltungen aus passiven und aktiven elektronischen Bauteilen in einem metallischen Ge häuse unterzubringen und dieses unter Füllung mit Schutzgas dicht zu verschließen. It is known hybrid circuits of passive and active electronic components in a metallic Ge housing to accommodate and to close this under filling with inert gas tight. Die Bauelemente sind dabei gemeinsam auf einem isolieren den, gesonderten Substrat aufgebracht. The components are applied together isolate the, separate substrate on a. Das Substrat wird auf einen me tallischen Gehäuseboden aufgeklebt, der mit eingeglasten elektrischen Durchführungsstiften (Pins oder andere elektrische Verbindungspfosten) versehen ist. The substrate is adhered to a me-metallic housing bottom, which is provided with glazed-electrical feedthrough pins (pins or other electrical connection post). Die elektrischen Verbindungen bei Halbleiter-Bauelementen und Anschlußstiften des Gehäuses werden üblicherweise in Wire-Bond-Tech nik ausgeführt, wobei Probleme auftreten, sowohl hinsichtlich der Haft festigkeit der Verbindungen als auch wegen der erforderlichen Bewegungs freiheit, die die Montagewerkzeuge haben müssen. The electrical connections in semiconductor components and terminal pins of the package are typically carried out in wire bonding Tech nik, said problems, both in terms of adhesive strength of the compounds as well as due to the necessary freedom of movement, which must have the mounting tools.

Aus der deutschen Offenlegungsschrift DE 35 27 818 A1 ist ein Gehäuse für einen Hybridschaltkreis bekannt mit reihenweise angeordneten Kontaktstiften mit Isolierdurchführungen durch einen Randbereich. From the German Offenlegungsschrift DE 35 27 818 A1 a housing for a hybrid circuit is known with serially arranged contact pins with Isolierdurchführungen through an edge region. Auch hierbei handelt es sich um Glasdurchführungen, deren Herstellung Probleme aufwirft. Here, too, is glass seals, their production raises problems. Ferner dient zur Fixierung der Schaltkreisträger am Gehäuseboden ein Kleber. Also serves to fix the circuit substrate on the housing bottom, an adhesive. Klebeverbindungen neigen zum Ausgasen und begrenzen daher temperaturmäßig den Einsatzbereich solcher Schaltungen. Adhesive bonds tend to outgas and thus limit in terms of temperature the application of such circuits.

Aus der deutschen Offenlegungsschrift DE 36 04 882 A1 - von der im Ober begriff des Patentanspruchs 1 ausgegangen wird - ist eine Ausführung ( Fig. 18) bekannt, bei der ein metallisches Bauteil ( 310 ) als Rahmen ausgeführt ist. 36 04 882 A1 from the German Offenlegungsschrift DE - starting from the conceptual in the upper part of claim 1 - is known, an embodiment (Fig. 18) in which a metallic member (310) is designed as a frame. Die elektrischen Anschlüsse ( 7 ) werden nach oben aus dem Deckel herausgeführt und deshalb ist das Vergießen des Moduls mit einer Hartvergußmasse ( 23 ) zwecks Isolation nötig. The electrical connections (7) are led out upwards from the lid and therefore, the casting of the module is provided with a Hartvergußmasse (23) for the insulating purpose necessary. Das Vergießen des Gehäuse innenraumes mit Vergußmasse ist aufwendig, muß den Raum oberhalb des Rahmens vollständig ausfüllen und begrenzt ebenfalls den Einsatzbereich des Moduls temperaturmäßig. The casting of the housing interior with potting compound is expensive, must fill the space above the frame completely and also limited in terms of temperature the range of use of the module. Ferner ist eine solche Abdichtung nicht als dampfdruckdicht anzusehen. Furthermore, such a seal is not to be regarded as steam pressure-tight.

Aufgabe der Erfindung ist es, ein Gehäuse zu schaffen mit vereinfachtem Aufbau und leichterer Herstellbarkeit, jedoch in hohem Qualitätsstandard insbesondere hinsichtlich der hergestellten Verbindungen und der Dicht heit des Gehäuses. The object of the invention is to provide a housing with a simplified structure and easier manufacturability, but in particular with regard to a high quality standard of the compounds prepared and the tightness of the housing.

Gelöst wird diese Aufgabe erfindungsgemäß durch die in Anspruch 1 aufgeführten Merkmale. This object is achieved according to the invention by the features listed in claim 1. Aus- und Weiterbildungen der Erfindung sind den weiteren Ansprüchen zu entnehmen. And developments of the invention are given in the further claims.

Im Ausführungsbeispiel zeigt: In the embodiment shows:

Fig. 1 einen Querschnitt durch das Gehäuse mit Hybrid-Schaltung; 1 shows a cross section through the housing with the hybrid circuit.

Fig. 2 eine Draufsicht auf die Hybrid-Schaltung; Fig. 2 is a plan view of the hybrid circuit;

Fig. 3 eine Unteransicht einer Durchkontaktierung; Fig. 3 is a bottom view of a via;

Fig. 4 einen Querschnitt gemäß Fig. 3; Fig. 4 is a cross-section of FIG. 3;

Fig. 5 eine Draufsicht gemäß Fig. 3. Fig. 5 is a plan view of FIG. 3.

Wie aus Fig. 1 ersichtlich, besteht das Gehäuse aus einem Gehäuseboden- Substrat 1 aus Isoliermaterial mit durchmetallisierten Bohrungen 4 und eingelöteten Anschlußstiften 3 und wird abgeschlossen von einem Metall deckel 2 . As seen from Fig. 1, the housing consists of a Gehäuseboden- substrate 1 of insulating material having plated through holes 4 and soldered connection pins 3 and is closed by a metal lid 2.

Um eine hermetische Dichtheit des Gehäuses zu erreichen, sind die Durch führungsbohrungen im Siebdruck beidseitig durchmetallisiert, wie Fig. 4 zeigt, und die Anschlußstifte werden mit einem hochschmelzenden Lot in die Metallisierungen eingelötet. To obtain a hermetic seal of the housing, the durchmetallisiert on both sides by guide holes in the screen printing as shown in FIG. 4, and the terminal pins are soldered with a high-melting solder in the metallizations. Um eine elektromagnetisch dichte Ab schirmung zu erhalten, ist das Substrat 1 beschichtet: Es ist auf seiner Außenseite mit einer Metallschicht versehen, wobei die Durchführungen in der Schicht 5 ringförmig elektrisch isolierend ausgespart (bei 6 um die Lötaugen herum gemäß Fig. 3 beabstandet) sind, jedoch in mindestens einem Fall elektrischer Kontakt durch Nichtbeabstandung gegeben ist. In order to obtain an electromagnetically tight From shielding, the substrate 1 is coated: It is provided on its outer side with a metal layer, wherein the penetrations in the layer 5 recessed annular electrically insulating (. Spaced at 6 to the pad around according to Fig 3) , however, is placed in at least one case electrical contact by Nichtbeabstandung. Um den Metalldeckel 2 auf das Gehäuse aufbringen zu können, besitzt das Substrat 1 eine, die gesamte Hybrid-Anordnung einschließende, bis an den Rand reichende Metallisierung ( 7 ) aus einer oder mehreren Schichten, von denen wenigstens eine aus einem Material zur Verbindung mit dem Deckel 2 besteht. In order to apply the metal cover 2 to the housing, has the substrate 1 a, enclosing the entire hybrid arrangement to the edge reaching metallization (7) from one or more layers, of which at least one of a material for connection to the lid 2 consists.

Das Substrat 1 , welches den Gehäuseboden bildet, ist aus einem Isolier material, wie Keramik oder Glas bestehend, wobei übliche elektrisch-iso lierende Werkstoffe, wie Aluminiumoxid, Aluminiumnitrit, Berilliumoxid, Magnesiumoxid oder ähnlich geeignete Substrate verwendet werden. The substrate 1, which forms the housing bottom, is composed of an insulating material such as ceramic or glass, using conventional electrically-iso-regulating materials such as alumina, aluminum nitride, beryllium oxide, magnesium oxide or similar suitable substrates may be used.

Wesentlich ist eine ausreichende Dichtheit und Temperaturbeständigkeit für die Zwecke der Erfindung, dies gilt auch für das zu verwendende Glas. It is essential sufficient tightness and temperature resistance for the purposes of the invention, this also applies to the glass to be used. Selbstverständlich kann auch Quarzglas, SiO 2 , oder eine Glas keramik oder eine Siliziumkeramik verwendet werden, wie Si 3 N 4 oder SiC. Of course, also of quartz glass, SiO 2, or ceramic, a glass or a silicon ceramic can be used, such as Si 3 N 4 or SiC. Mischsubstrate sind anwendbar, ebenso bereits vorgefertigte, ein seitig metallisierte Keramik- oder Glassubstrate. Mixed substrates are applicable also prefabricated, one-sided metallized ceramic or glass substrates. Als Metall für den Deckel 2 werden mit der Keramik gut verbindbare Metalle bevorzugt, ins besondere eine Legierung, wie sie unter dem Handelsnamen "Kovar" erhält lich ist. As the metal for the lid 2 can be connected well with the ceramic metals are preferred, in particular an alloy as it gets under the trade name "Kovar" is Lich. Diese oder ähnliche Legierungen werden bevorzugt, weil sie einen der Keramik angeglichenen thermischen Ausdehnungskoeffizienten aufweisen. These or similar alloys are preferred because they have one of the ceramic approximated coefficient of thermal expansion. Zur Verbindung des Deckels mit dem Substrat dient eine Lot schicht, insbesondere aus einem Zinnbasislot mit vorzugsweise Schmelz punkt von unter 200°C. a solder layer is used for connecting the lid to the substrate, in particular a Zinnbasislot preferably having melting point below 200 ° C. Das Lot kann entweder direkt oder über eine oder mehrere Zwischenschichten mit dem Substrat 1 im Randbereich 7 verbunden werden. The solder can be connected either directly or via one or more intermediate layers to the substrate 1 in the peripheral region. 7 Diese eine oder mehrere Verbindungsschichten 7 sind vorzugsweise zusammen in einem Arbeitsgang mit der Dickschichtschaltung im Siebdruck auf der Oberseite des Substrats aufgebracht, vgl. These one or more tie layers 7 are preferably applied together in a single operation with the thick film circuit by screen printing on the upper surface of the substrate, see FIG. Fig. 1 und Fig. 2. Selbstverständlich sind auch andere Materialien, wie sie zur Verbindung zwischen Metall und Metall-Keramik-Schichten und zur Verbindung zwischen Metall und Metall-Glas-Schichten bekannt sind, anwendbar. Fig. 1 and Fig. 2 are of course also other materials, such as are known for connecting between the metal and metal-ceramic layers and for connection between the metal and metal-glass layers, applicable. Dieses nämlich wird um etwa 150°C höher schmelzend gewählt, insbesonders ein Lot auf einer Bleibasis. This namely is selected higher melting at about 150 ° C, especially a solder on a lead base. Es gibt auch andere Lote mit Schmelzpunkten über 250°C, insbesonders 300°C bis 400°C, die geeignet sind. There are other alloys with melting points above 250 ° C, especially 300 ° C to 400 ° C, are suitable. Bei der Wahl des Verbindungsmaterials sollte man beachten, daß beim hermetisch dich ten Verschließen des Gehäuses mit Hilfe des Deckels 2 frühere Kontaktie rungen, Lotverbindungen und andere Verbindungen (Bonddrähte) nicht mehr als notwendig erhitzt werden dürfen. When choosing the bonding material you should note that when you hermetically th closing the housing 2 earlier PLEASE CONTACT conclusions with the help of the cover, solder joints and other connections (bond wires) may no longer be heated as necessary.

Bei der Herstellung wird zunächst auf dem Substrat 1 , das als Gehäuse boden dient, die Dickschichtschaltung im Siebdruckverfahren mittels be kannter Dickschichtmaterialien aufgebracht, insbesondere unter Verwen dung edelmetallhaltiger Siebdruckpasten. In the production is first on the substrate 1, which serves as a housing bottom, the applied thick-film circuit by screen printing by means of known per be thick-film materials, especially under USAGE dung precious metal screen printing pastes. Diese werden dann in einem ge eigneten Ofen eingebrannt, eine Einzelheit, wie die Durchtrittsmateria lien oder das Lot in die Bohrungen 4 eingebracht werden, um im Quer schnitt runde, quadratische oder rechteckige Pins 3 einzulöten, ist in Fig. 4 ersichtlich, dabei wird deutlich, daß die Durchmetallisierung von beiden Seiten des Substrats erfolgt. These are then baked in a GE suitable furnace, a detail of how the passage Materia lien or the solder will be placed in the holes 4 to the cross-round, square or rectangular pins cut soldered 3, in Fig. 4 can be seen, this is clearly that the metalization is carried out from both sides of the substrate. Auch diese Lotverbindung ist absolut dicht. These solder joint is absolutely tight. Dann erfolgt mittels des SMD-Montageroboters (Surface Mounter Device) die Bestückung mit den Halbleiterbauelementen auf dem Dickschichtmuster 11 . Then the assembly with the semiconductor components by means of the SMD mounting robot (surface mounter device) on the thick-film pattern. 11 Deren Verbindungen können mittels Bonddrähten 10 vom Bauteil 8 zum Dickschichtmuster 11 erfolgen. Their compounds can be made by means of bonding wires 10 from the component 8 to the thick-film pattern. 11 In Verlängerung des Dickschichtmusters sind nach Fig. 5 Lötaugen auf der Innenraumseite des Substrats 1 entstanden. In the extension of the thick film pattern 5 pads are formed on the interior side of the substrate 1 of FIG..

Vorteile der Erfindung: Advantages of the invention:

Die mit der Erfindung erzielten Vorteile bestehen insbesondere darin, daß The advantages achieved with the invention consist in particular in that

  • - der Aufbau der Gehäuse vereinfacht ist, - the construction of the housing is simplified,
  • - hohe Herstellungskosten für die Gehäuse gesenkt werden - high production costs for the housing to be reduced
  • - und hohe Werkzeugkosten für Sonderabmaße entfallen. - and high tooling costs for Sonderabmaße omitted.
  • - Das kostspielige Einglasen der Durchführungsstifte entfällt, - The costly vitrification of feedthrough pins omitted,
  • - thermische Übergangswiderstände, wie sie beim Einkleben durch die Kleberschicht entstehen, fallen weg. - thermal contact resistance as they arise when gluing by the adhesive layer, are eliminated.
    Die Zuverlässigkeit wird erhöht durch Wegfall der Kleberausgasung. Increases reliability by eliminating Kleberausgasung.
  • - Die Wire-Bond-Verbindungen 10 vom Substrat 1 zu den Durchführungs stiften 3 entfallen, bzw. werden durch die viel zuverlässigeren siebgedruckten Leiterbahnverbindungen 11 ersetzt. - The wire-bond connections 10 from the substrate 1 to the feedthrough pins 3 are omitted, or be replaced by the much more reliable screen-printed conductor track connections. 11
  • - Die Anschlußstifte können gegebenenfalls unmittelbar dort angebracht werden, wo sie gebraucht werden, dh optimal kurze elektrische Wege können von dem Bauteil heraus auf eine nicht dargestellte Träger platine für das Gehäuse erreicht werden, - The pins may optionally be mounted directly where they are needed, ie optimally short electrical paths can from the component out motherboard to a not shown support for the housing can be achieved,
  • - bei gleicher Grundfläche des Substrats steht mehr Platz für Leiter bahnen und Bauteile zur Verfügung, - the same footprint of the substrate is more space for printed circuit tracks and components available,
  • - und insgesamt wird eine beträchtliche Gewichtseinsparung erreicht, da der Metallgehäuseboden entfällt. - and overall a considerable weight saving is achieved because the metal case back is eliminated.

Claims (5)

1. Gehäuse für das hermetische Kapseln von Hybrid-Schaltungen, ins besondere für elektronische oder optronische Dickschichtschaltungen, auf isolierten Substrat, das zugleich den Gehäuseboden bildet, und an seinem äußeren Randbereich eine oder mehrere Schichten trägt, von denen wenigstens eine aus einem in thermischen Ausdehnungskoeffizienten dem Substrat angepaßten Material zum Verbinden mit einem metallischen Bauteil besteht und daß auf dem Substrat auf der dem Innenraum abgekehrten Seite eine Metallschicht aufgebaut ist, dadurch gekennzeichnet, daß das Bauteil ein Gehäusedeckel ( 2 ) ist und das Substrat ( 1 ) mit beidseitig durchmetallisierten, elektrischen Durchführungen ( 4 ) versehen ist, in die Anschlußstifte ( 3 ) einlötbar sind, wobei die Metallschicht ( 5 ) an den Durchführungen der Außenseite des Substrats ( 1 ) ringförmig ( 6 ) elektrisch isolierend ausgespart ist. 1. Housing for the hermetic capsules of hybrid circuits, in particular electronic or optical, thick-film circuits on insulated substrate which also forms the housing bottom, and carries one or more layers at the outer edge region of which at least one of an in coefficient of thermal expansion matched to the substrate material for connection to a metal component, and in that a metal layer is constructed on the substrate on the side remote from the interior side, characterized in that the component is a housing cover (2) and the substrate (1) with plated on both sides, electrical bushings (4) is provided in the terminal pins (3) are solderable, wherein the metal layer (5) at the ducts of the outer side of the substrate (1) a ring (6) is electrically insulating recessed.
2. Gehäuse nach Anspruch 1, dadurch gekennzeichnet, daß das den Boden bildende Substrat ( 1 ) aus Keramik besteht, die auf der dem Innen raum zugekehrten Seite das Dickschichtmuster ( 11 ) für monolithisch inte grierte Schaltkreise für passive und aktive elektronische Bauelemente ( 8, 9 ) trägt. 2. Housing according to claim 1, characterized in that the substrate forming the base (1) consists of ceramic, which on the interior side facing the thick film pattern (11) for monolithic inte grated circuits for passive and active electronic components (8, 9) bears.
3. Gehäuse nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß das Dickschichtmuster ( 11 ) von der einen und die Metallschicht ( 5 ) von der anderen Seite des Substrats und die elektrischen Durchführungen ( 4 ) von beiden Seiten des Substrats im Siebdruckverfahren aufgebracht wird. 3. Housing according to claim 1 or 2, characterized in that the thick film pattern (11) from one side and the metal layer (5) from the other side of the substrate and the electrical feed-throughs (4) is applied from both sides of the substrate by screen printing.
4. Gehäuse nach einem der vorhergehenden Ansprüche, dadurch gekenn zeichnet, daß die Lötaugen (nach Fig. 5) auf der der Metallschicht ( 5 ) abgekehrten Seite des Substrats ( 1 ) in Verlängerung des Dickschichtmusters ( 11 ) gebildet sind. 4. Housing according to one of the preceding claims, characterized in that the lands on which the metal layer (5) facing away from (FIG. 5) side of the substrate (1) in extension of the thick film pattern (11) are formed.
5. Gehäuse nach einem der vorhergehenden Ansprüche, dadurch gekenn zeichnet, daß alle Durchführungen ( 4 ) für die Anschlußstifte ( 3 ) innerhalb der Fläche des Substrats ( 1 ) und des Deckels ( 2 ) mit Abstand zum Außenrand derselben angeordnet sind. 5. Housing according to one of the preceding claims, characterized in that all the passages (4) for the terminal pins (3) within the area of the substrate (1) and the lid (2) at a distance to the outer periphery thereof are arranged.
DE3811313A 1988-04-02 1988-04-02 Expired - Fee Related DE3811313C2 (en)

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DE3811313A DE3811313C2 (en) 1988-04-02 1988-04-02
FR8900216A FR2629664B1 (en) 1988-04-02 1989-01-10 Case for hybrid circuits

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DE3811313A1 DE3811313A1 (en) 1989-10-19
DE3811313C2 true DE3811313C2 (en) 1992-12-10

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Publication number Priority date Publication date Assignee Title
DE19516548A1 (en) * 1995-05-05 1996-11-14 Blaupunkt Werke Gmbh Cap for electronic component

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FR2654891A1 (en) * 1989-11-20 1991-05-24 Alcatel Radiotelephone Shield for radio frequency circuit.
DE3941680A1 (en) * 1989-12-18 1991-06-20 Telefunken Electronic Gmbh Kunststoffgehaeuse for electronic components
US5177595A (en) * 1990-10-29 1993-01-05 Hewlett-Packard Company Microchip with electrical element in sealed cavity
FI109960B (en) * 1991-09-19 2002-10-31 Nokia Corp Electronic device
DE4345594B4 (en) * 1993-06-14 2011-08-11 EMI-tec Elektronische Materialien GmbH, 12277 Dispensed, electrically-conductive, resilient plastic seal completing electromagnetic screening, comprises screening profile consisting of overlapping and adjacent strands
DE4436903C2 (en) * 1994-10-15 2003-10-30 Daimler Chrysler Ag Arrangement for electromagnetic shielding of electronic circuits and methods for producing such an arrangement

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GB1361176A (en) * 1971-07-05 1974-07-24 Smiths Industries Ltd Electrical devices
CH660258A5 (en) * 1983-01-20 1987-03-31 Landis & Gyr Ag Keramikgehaeuse for a hybrid circuit.
DE3527818C2 (en) * 1985-08-02 1993-08-05 Technotron Elektrotechnische Geraete Und Komponenten Gmbh, 8450 Amberg, De
DE3604882A1 (en) * 1986-02-15 1987-08-20 Bbc Brown Boveri & Cie The power semiconductor module and method for manufacturing the module

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19516548A1 (en) * 1995-05-05 1996-11-14 Blaupunkt Werke Gmbh Cap for electronic component

Also Published As

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FR2629664A1 (en) 1989-10-06
DE3811313A1 (en) 1989-10-19
FR2629664B1 (en) 1993-12-03

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