DE3684075D1 - Halbleiterlaservorrichtung. - Google Patents

Halbleiterlaservorrichtung.

Info

Publication number
DE3684075D1
DE3684075D1 DE8686307333T DE3684075T DE3684075D1 DE 3684075 D1 DE3684075 D1 DE 3684075D1 DE 8686307333 T DE8686307333 T DE 8686307333T DE 3684075 T DE3684075 T DE 3684075T DE 3684075 D1 DE3684075 D1 DE 3684075D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686307333T
Other languages
English (en)
Inventor
Takahiro Suyama
Kohsei Takahashi
Saburo Yamamoto
Toshiro Hayakawa
Masafumi Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3684075D1 publication Critical patent/DE3684075D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8686307333T 1985-09-26 1986-09-24 Halbleiterlaservorrichtung. Expired - Lifetime DE3684075D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60213519A JPS6273690A (ja) 1985-09-26 1985-09-26 半導体レ−ザ−素子

Publications (1)

Publication Number Publication Date
DE3684075D1 true DE3684075D1 (de) 1992-04-09

Family

ID=16640529

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686307333T Expired - Lifetime DE3684075D1 (de) 1985-09-26 1986-09-24 Halbleiterlaservorrichtung.

Country Status (4)

Country Link
US (1) US4769822A (de)
EP (1) EP0217627B1 (de)
JP (1) JPS6273690A (de)
DE (1) DE3684075D1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01186688A (ja) * 1987-09-02 1989-07-26 Sharp Corp 半導体レーザ装置
JP2572082B2 (ja) * 1987-10-28 1997-01-16 富士写真フイルム株式会社 光半導体デバイス
FR2625036B1 (fr) * 1987-12-18 1990-10-26 Thomson Csf Procede de realisation d'un reseau de diffraction sur un materiau semi-conducteur, et dispositif opto-electronique comportant un reseau de diffraction realise selon ce procede
JPH0240984A (ja) * 1988-07-30 1990-02-09 Tokyo Univ 半導体分布帰還型レーザ装置
CA2249053A1 (en) * 1997-09-30 1999-03-30 Mitsui Chemicals, Incorporated Semiconductor laser device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4190813A (en) * 1977-12-28 1980-02-26 Bell Telephone Laboratories, Incorporated Strip buried heterostructure laser
US4302729A (en) * 1979-05-15 1981-11-24 Xerox Corporation Channeled substrate laser with distributed feedback
JPS57170584A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Semiconductor laser device
JPS58196089A (ja) * 1982-05-12 1983-11-15 Hitachi Ltd 半導体レ−ザ−素子
JPS5917293A (ja) * 1982-07-20 1984-01-28 Sharp Corp 半導体レ−ザ素子
JPS59119888A (ja) * 1982-12-27 1984-07-11 Fujitsu Ltd 分布帰還型半導体レ−ザ
JPS59139691A (ja) * 1983-01-31 1984-08-10 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ装置
US4594718A (en) * 1983-02-01 1986-06-10 Xerox Corporation Combination index/gain guided semiconductor lasers
JPS6065588A (ja) * 1983-09-21 1985-04-15 Agency Of Ind Science & Technol 半導体レ−ザの製造方法
JPS6066484A (ja) * 1983-09-22 1985-04-16 Toshiba Corp 半導体レ−ザ装置及びその製造方法

Also Published As

Publication number Publication date
EP0217627A2 (de) 1987-04-08
EP0217627B1 (de) 1992-03-04
EP0217627A3 (en) 1988-07-20
JPS6273690A (ja) 1987-04-04
US4769822A (en) 1988-09-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee