DE3581558D1 - Magnetron-zerstaeubungs-vorrichtung mit ebenen und konkaven auftreffplatten. - Google Patents

Magnetron-zerstaeubungs-vorrichtung mit ebenen und konkaven auftreffplatten.

Info

Publication number
DE3581558D1
DE3581558D1 DE8585303330T DE3581558T DE3581558D1 DE 3581558 D1 DE3581558 D1 DE 3581558D1 DE 8585303330 T DE8585303330 T DE 8585303330T DE 3581558 T DE3581558 T DE 3581558T DE 3581558 D1 DE3581558 D1 DE 3581558D1
Authority
DE
Germany
Prior art keywords
planes
spraying device
rolling plates
concave rolling
magnetronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585303330T
Other languages
English (en)
Inventor
John Colville Helmer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Application granted granted Critical
Publication of DE3581558D1 publication Critical patent/DE3581558D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE8585303330T 1984-05-17 1985-05-10 Magnetron-zerstaeubungs-vorrichtung mit ebenen und konkaven auftreffplatten. Expired - Lifetime DE3581558D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61143384A 1984-05-17 1984-05-17

Publications (1)

Publication Number Publication Date
DE3581558D1 true DE3581558D1 (de) 1991-03-07

Family

ID=24449000

Family Applications (2)

Application Number Title Priority Date Filing Date
DE198585303330T Pending DE163445T1 (de) 1984-05-17 1985-05-10 Magnetron-zerstaeubungs-vorrichtung mit ebenen und konkaven auftreffplatten.
DE8585303330T Expired - Lifetime DE3581558D1 (de) 1984-05-17 1985-05-10 Magnetron-zerstaeubungs-vorrichtung mit ebenen und konkaven auftreffplatten.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE198585303330T Pending DE163445T1 (de) 1984-05-17 1985-05-10 Magnetron-zerstaeubungs-vorrichtung mit ebenen und konkaven auftreffplatten.

Country Status (4)

Country Link
EP (1) EP0163445B1 (de)
JP (1) JPS6139522A (de)
KR (1) KR890004171B1 (de)
DE (2) DE163445T1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4627904A (en) * 1984-05-17 1986-12-09 Varian Associates, Inc. Magnetron sputter device having separate confining magnetic fields to separate targets and magnetically enhanced R.F. bias
JPS61183467A (ja) * 1985-02-08 1986-08-16 Hitachi Ltd スパッタリング方法及びその装置
JPH07105303B2 (ja) * 1985-02-25 1995-11-13 株式会社東芝 薄膜形成方法
US4842707A (en) * 1986-06-23 1989-06-27 Oki Electric Industry Co., Ltd. Dry process apparatus
US4738761A (en) * 1986-10-06 1988-04-19 Microelectronics Center Of North Carolina Shared current loop, multiple field apparatus and process for plasma processing
GB2209769A (en) * 1987-09-16 1989-05-24 Ion Tech Ltd Sputter coating
US4810347A (en) * 1988-03-21 1989-03-07 Eaton Corporation Penning type cathode for sputter coating
JPH01173502U (de) * 1988-05-27 1989-12-08
US5045166A (en) * 1990-05-21 1991-09-03 Mcnc Magnetron method and apparatus for producing high density ionic gas discharge
DE4137483A1 (de) * 1991-11-14 1993-05-19 Leybold Ag Kathode zum beschichten eines substrats
DE4202349C2 (de) * 1992-01-29 1997-02-13 Leybold Ag Vorrichtung zur Kathodenzerstäubung
US5985115A (en) 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
US6217716B1 (en) 1998-05-06 2001-04-17 Novellus Systems, Inc. Apparatus and method for improving target erosion in hollow cathode magnetron sputter source
DE10234861A1 (de) * 2002-07-31 2004-02-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Einrichtung zur wechselweisen Abscheidung zweier Materialien durch Kathoden-Zerstäubung
KR20100040855A (ko) * 2007-06-15 2010-04-21 오씨 외를리콘 발처스 악티엔게젤샤프트 멀티타겟 스퍼터 소스 및 다층 증착 방법
TWI386507B (zh) * 2009-05-19 2013-02-21 Univ Nat Kaohsiung 1St Univ Sc Magnetron sputtering equipment
DE102017103746A1 (de) 2017-02-23 2018-08-23 VON ARDENNE Asset GmbH & Co. KG Elektronenstrahlverdampfer, Beschichtungsvorrichtung und Beschichtungsverfahren

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060470A (en) * 1974-12-06 1977-11-29 Clarke Peter J Sputtering apparatus and method
US4100055A (en) * 1977-06-10 1978-07-11 Varian Associates, Inc. Target profile for sputtering apparatus
US4219397A (en) * 1978-11-24 1980-08-26 Clarke Peter J Magnetron sputter apparatus
HU179482B (en) * 1979-02-19 1982-10-28 Mikroelektronikai Valalat Penning pulverizel source
US4457825A (en) * 1980-05-16 1984-07-03 Varian Associates, Inc. Sputter target for use in a sputter coating source
US4434038A (en) * 1980-09-15 1984-02-28 Vac-Tec Systems, Inc. Sputtering method and apparatus utilizing improved ion source
JPS5943546B2 (ja) * 1981-05-26 1984-10-23 日本真空技術株式会社 スパツタリング装置
US4391697A (en) * 1982-08-16 1983-07-05 Vac-Tec Systems, Inc. High rate magnetron sputtering of high permeability materials
JPS5976875A (ja) * 1982-10-22 1984-05-02 Hitachi Ltd マグネトロン型スパッタ装置とそれに用いるターゲット
US4428816A (en) * 1983-05-25 1984-01-31 Materials Research Corporation Focusing magnetron sputtering apparatus
JPS6451542A (en) * 1987-08-21 1989-02-27 Matsushita Electric Ind Co Ltd Cache memory controller

Also Published As

Publication number Publication date
DE163445T1 (de) 1986-05-22
JPH036221B2 (de) 1991-01-29
KR850008359A (ko) 1985-12-16
EP0163445A1 (de) 1985-12-04
EP0163445B1 (de) 1991-01-30
JPS6139522A (ja) 1986-02-25
KR890004171B1 (ko) 1989-10-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.(N.