DE3484811D1 - Pinch-effekt-gleichrichter. - Google Patents

Pinch-effekt-gleichrichter.

Info

Publication number
DE3484811D1
DE3484811D1 DE8484107496T DE3484811T DE3484811D1 DE 3484811 D1 DE3484811 D1 DE 3484811D1 DE 8484107496 T DE8484107496 T DE 8484107496T DE 3484811 T DE3484811 T DE 3484811T DE 3484811 D1 DE3484811 D1 DE 3484811D1
Authority
DE
Germany
Prior art keywords
pinch effect
effect rectifier
rectifier
pinch
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8484107496T
Other languages
English (en)
Inventor
Bantval Jayant Baliga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of DE3484811D1 publication Critical patent/DE3484811D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8122—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
DE8484107496T 1983-08-08 1984-06-28 Pinch-effekt-gleichrichter. Expired - Fee Related DE3484811D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/510,520 US4641174A (en) 1983-08-08 1983-08-08 Pinch rectifier

Publications (1)

Publication Number Publication Date
DE3484811D1 true DE3484811D1 (de) 1991-08-22

Family

ID=24031095

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484107496T Expired - Fee Related DE3484811D1 (de) 1983-08-08 1984-06-28 Pinch-effekt-gleichrichter.

Country Status (4)

Country Link
US (1) US4641174A (de)
EP (1) EP0134456B1 (de)
JP (1) JPS6074582A (de)
DE (1) DE3484811D1 (de)

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DE3631136A1 (de) * 1986-09-12 1988-03-24 Siemens Ag Diode mit weichem abrissverhalten
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US4827321A (en) * 1987-10-29 1989-05-02 General Electric Company Metal oxide semiconductor gated turn off thyristor including a schottky contact
US4969027A (en) * 1988-07-18 1990-11-06 General Electric Company Power bipolar transistor device with integral antisaturation diode
US4967243A (en) * 1988-07-19 1990-10-30 General Electric Company Power transistor structure with high speed integral antiparallel Schottky diode
JP2667477B2 (ja) * 1988-12-02 1997-10-27 株式会社東芝 ショットキーバリアダイオード
US5111253A (en) * 1989-05-09 1992-05-05 General Electric Company Multicellular FET having a Schottky diode merged therewith
US5814832A (en) * 1989-09-07 1998-09-29 Canon Kabushiki Kaisha Electron emitting semiconductor device
JPH0750791B2 (ja) * 1989-09-20 1995-05-31 株式会社日立製作所 半導体整流ダイオード及びそれを使つた電源装置並びに電子計算機
US4982260A (en) * 1989-10-02 1991-01-01 General Electric Company Power rectifier with trenches
US4994883A (en) * 1989-10-02 1991-02-19 General Electric Company Field controlled diode (FCD) having MOS trench gates
JPH065736B2 (ja) * 1989-12-15 1994-01-19 株式会社東芝 ショットキー・ダイオード
CA2064146C (en) * 1991-03-28 1997-08-12 Hisashi Ariyoshi Schottky barrier diode and a method of manufacturing thereof
US5345100A (en) * 1991-03-29 1994-09-06 Shindengen Electric Manufacturing Co., Ltd. Semiconductor rectifier having high breakdown voltage and high speed operation
US5262669A (en) * 1991-04-19 1993-11-16 Shindengen Electric Manufacturing Co., Ltd. Semiconductor rectifier having high breakdown voltage and high speed operation
JP2809253B2 (ja) * 1992-10-02 1998-10-08 富士電機株式会社 注入制御型ショットキーバリア整流素子
JP2719295B2 (ja) * 1993-04-09 1998-02-25 リコー応用電子研究所株式会社 半導体整流装置
US5365102A (en) * 1993-07-06 1994-11-15 North Carolina State University Schottky barrier rectifier with MOS trench
US5612567A (en) * 1996-05-13 1997-03-18 North Carolina State University Schottky barrier rectifiers and methods of forming same
US5859465A (en) * 1996-10-15 1999-01-12 International Rectifier Corporation High voltage power schottky with aluminum barrier metal spaced from first diffused ring
JP3742204B2 (ja) * 1996-11-21 2006-02-01 日世株式会社 成形焼き菓子の製造方法
DE19723176C1 (de) * 1997-06-03 1998-08-27 Daimler Benz Ag Leistungshalbleiter-Bauelement und Verfahren zu dessen Herstellung
US6362495B1 (en) 1998-03-05 2002-03-26 Purdue Research Foundation Dual-metal-trench silicon carbide Schottky pinch rectifier
DE19819590C1 (de) * 1998-04-30 1999-06-24 Siemens Ag MOS-Leistungstransistor
US6977420B2 (en) * 1998-09-30 2005-12-20 National Semiconductor Corporation ESD protection circuit utilizing floating lateral clamp diodes
JP4160752B2 (ja) * 1999-09-22 2008-10-08 サイスド エレクトロニクス デヴェロプメント ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニ コマンディートゲゼルシャフト 炭化珪素からなる半導体装置とその製造方法
JP2001168351A (ja) 1999-12-13 2001-06-22 Fuji Electric Co Ltd 半導体装置
US6462393B2 (en) 2001-03-20 2002-10-08 Fabtech, Inc. Schottky device
DE10259373B4 (de) * 2002-12-18 2012-03-22 Infineon Technologies Ag Überstromfeste Schottkydiode mit niedrigem Sperrstrom
US20040188703A1 (en) * 2003-03-07 2004-09-30 Tongwei Cheng Switch
DE10326739B3 (de) * 2003-06-13 2005-03-24 Infineon Technologies Ag Halbleiterbauelement mit Schottky-Metallkontakt
DE10337457B3 (de) * 2003-08-14 2005-01-20 Infineon Technologies Ag Transistorbauelement mit verbessertem Rückstromverhalten
US7262467B2 (en) * 2003-09-10 2007-08-28 Ixys Corporation Over charge protection device
JP4623259B2 (ja) * 2003-12-05 2011-02-02 サンケン電気株式会社 ショットキバリアを有する半導体装置
JP4610207B2 (ja) * 2004-02-24 2011-01-12 三洋電機株式会社 半導体装置およびその製造方法
US7244970B2 (en) 2004-12-22 2007-07-17 Tyco Electronics Corporation Low capacitance two-terminal barrier controlled TVS diodes
JP2006295062A (ja) * 2005-04-14 2006-10-26 Rohm Co Ltd 半導体装置
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
JP2007281231A (ja) * 2006-04-07 2007-10-25 Shindengen Electric Mfg Co Ltd 半導体装置
US7781802B2 (en) 2006-04-28 2010-08-24 Nissan Motor Co., Ltd. Semiconductor device and manufacturing method thereof
JP5272323B2 (ja) * 2006-04-28 2013-08-28 日産自動車株式会社 半導体装置とその製造方法
US9437729B2 (en) 2007-01-08 2016-09-06 Vishay-Siliconix High-density power MOSFET with planarized metalization
US9947770B2 (en) 2007-04-03 2018-04-17 Vishay-Siliconix Self-aligned trench MOSFET and method of manufacture
US7750426B2 (en) 2007-05-30 2010-07-06 Intersil Americas, Inc. Junction barrier Schottky diode with dual silicides
US8368166B2 (en) * 2007-05-30 2013-02-05 Intersil Americas Inc. Junction barrier Schottky diode
TW200847448A (en) * 2007-05-30 2008-12-01 Intersil Inc Junction barrier schottky diode
JP4333782B2 (ja) * 2007-07-05 2009-09-16 株式会社デンソー ジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
ITBO20070791A1 (it) * 2007-11-30 2009-06-01 Spal Automotive Srl Macchina elettrica rotante e metodo di assemblaggio della stessa.
US7714365B2 (en) * 2008-02-21 2010-05-11 Infineon Technologies Austria Ag Semiconductor component with Schottky zones in a drift zone
US20090224354A1 (en) * 2008-03-05 2009-09-10 Cree, Inc. Junction barrier schottky diode with submicron channels
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US8174067B2 (en) * 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8304829B2 (en) 2008-12-08 2012-11-06 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8227855B2 (en) * 2009-02-09 2012-07-24 Fairchild Semiconductor Corporation Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same
US8148749B2 (en) * 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
US8049276B2 (en) * 2009-06-12 2011-11-01 Fairchild Semiconductor Corporation Reduced process sensitivity of electrode-semiconductor rectifiers
US9443974B2 (en) 2009-08-27 2016-09-13 Vishay-Siliconix Super junction trench power MOSFET device fabrication
DE102009047808B4 (de) * 2009-09-30 2018-01-25 Infineon Technologies Austria Ag Bipolares Halbleiterbauelement und Verfahren zur Herstellung einer Halbleiterdiode
US9431530B2 (en) 2009-10-20 2016-08-30 Vishay-Siliconix Super-high density trench MOSFET
US9117739B2 (en) * 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
JP5557581B2 (ja) * 2010-04-08 2014-07-23 株式会社日立製作所 半導体装置および電力変換装置
US8432000B2 (en) 2010-06-18 2013-04-30 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
EP2763302A4 (de) * 2011-09-26 2015-04-29 Mitsubishi Electric Corp Gleichrichter eines wechselstromgenerators für fahrzeuge
CN103094356B (zh) * 2011-11-04 2015-08-19 上海华虹宏力半导体制造有限公司 功率二极管的器件结构
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US9722041B2 (en) 2012-09-19 2017-08-01 Vishay-Siliconix Breakdown voltage blocking device
JP2014207460A (ja) * 2014-05-28 2014-10-30 株式会社日立製作所 半導体装置および電力変換装置
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
CN106575666B (zh) 2014-08-19 2021-08-06 维西埃-硅化物公司 超结金属氧化物半导体场效应晶体管
US10234486B2 (en) 2014-08-19 2019-03-19 Vishay/Siliconix Vertical sense devices in vertical trench MOSFET
CN106158982B (zh) * 2015-04-08 2019-02-05 瀚薪科技股份有限公司 碳化硅接面能障萧特基整流器

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Also Published As

Publication number Publication date
JPH0370907B2 (de) 1991-11-11
EP0134456A2 (de) 1985-03-20
US4641174A (en) 1987-02-03
EP0134456A3 (en) 1987-01-14
JPS6074582A (ja) 1985-04-26
EP0134456B1 (de) 1991-07-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8128 New person/name/address of the agent

Representative=s name: SIEB, R., DIPL.-CHEM. DR.RER.NAT., PAT.-ANW., 6947

8339 Ceased/non-payment of the annual fee