DE3478170D1 - A c-mos device and process for manufacturing the same - Google Patents
A c-mos device and process for manufacturing the sameInfo
- Publication number
- DE3478170D1 DE3478170D1 DE8484108241T DE3478170T DE3478170D1 DE 3478170 D1 DE3478170 D1 DE 3478170D1 DE 8484108241 T DE8484108241 T DE 8484108241T DE 3478170 T DE3478170 T DE 3478170T DE 3478170 D1 DE3478170 D1 DE 3478170D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- same
- mos device
- mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76294—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using selective deposition of single crystal silicon, i.e. SEG techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58128919A JPS6021560A (ja) | 1983-07-15 | 1983-07-15 | 相補型mos半導体装置及びその製造方法 |
JP58138801A JPS6030167A (ja) | 1983-07-29 | 1983-07-29 | 相補型mos半導体装置及びその製造方法 |
JP58138802A JPS6030168A (ja) | 1983-07-29 | 1983-07-29 | 相補型mos半導体装置及びその製造方法 |
JP58138803A JPS6030169A (ja) | 1983-07-29 | 1983-07-29 | 相補型mos半導体装置及びその製造方法 |
JP58182655A JPS6074664A (ja) | 1983-09-30 | 1983-09-30 | 相補型mos半導体装置の製造方法 |
JP58180544A JPS6074564A (ja) | 1983-09-30 | 1983-09-30 | 半導体記憶装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3478170D1 true DE3478170D1 (en) | 1989-06-15 |
Family
ID=27552731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484108241T Expired DE3478170D1 (en) | 1983-07-15 | 1984-07-13 | A c-mos device and process for manufacturing the same |
Country Status (3)
Country | Link |
---|---|
US (1) | US5079183A (de) |
EP (1) | EP0134504B1 (de) |
DE (1) | DE3478170D1 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0178649B1 (de) * | 1984-10-17 | 1991-07-24 | Hitachi, Ltd. | Komplementäre Halbleiteranordnung |
KR890017771A (ko) * | 1988-05-20 | 1989-12-18 | 강진구 | 반도체장치 제조방법 |
US5010034A (en) * | 1989-03-07 | 1991-04-23 | National Semiconductor Corporation | CMOS and bipolar fabrication process using selective epitaxial growth scalable to below 0.5 micron |
JPH03296247A (ja) * | 1990-04-13 | 1991-12-26 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP3556679B2 (ja) * | 1992-05-29 | 2004-08-18 | 株式会社半導体エネルギー研究所 | 電気光学装置 |
JPH05183159A (ja) * | 1992-01-07 | 1993-07-23 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US5340754A (en) * | 1992-09-02 | 1994-08-23 | Motorla, Inc. | Method for forming a transistor having a dynamic connection between a substrate and a channel region |
US6445043B1 (en) * | 1994-11-30 | 2002-09-03 | Agere Systems | Isolated regions in an integrated circuit |
JP3223895B2 (ja) * | 1998-12-15 | 2001-10-29 | 日本電気株式会社 | 半導体装置の製造方法 |
US7348652B2 (en) * | 2003-03-07 | 2008-03-25 | Micron Technology, Inc. | Bulk-isolated PN diode and method of forming a bulk-isolated PN diode |
JP2005244020A (ja) * | 2004-02-27 | 2005-09-08 | Toshiba Corp | 半導体装置及びその製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3861968A (en) * | 1972-06-19 | 1975-01-21 | Ibm | Method of fabricating integrated circuit device structure with complementary elements utilizing selective thermal oxidation and selective epitaxial deposition |
JPS51135385A (en) * | 1975-03-06 | 1976-11-24 | Texas Instruments Inc | Method of producing semiconductor device |
US4145803A (en) * | 1977-07-22 | 1979-03-27 | Texas Instruments Incorporated | Lithographic offset alignment techniques for RAM fabrication |
US4319395A (en) * | 1979-06-28 | 1982-03-16 | Motorola, Inc. | Method of making self-aligned device |
JPS571225A (en) * | 1980-06-03 | 1982-01-06 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS5768049A (en) * | 1980-10-15 | 1982-04-26 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
JPS5776830A (en) * | 1980-10-31 | 1982-05-14 | Fujitsu Ltd | Semiconductor substrate |
JPS5893252A (ja) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | 半導体装置及びその製造方法 |
US4412868A (en) * | 1981-12-23 | 1983-11-01 | General Electric Company | Method of making integrated circuits utilizing ion implantation and selective epitaxial growth |
JPS58114419A (ja) * | 1981-12-28 | 1983-07-07 | Fujitsu Ltd | 半導体装置用基板の製造方法 |
JPS58115832A (ja) * | 1981-12-28 | 1983-07-09 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS58114422A (ja) * | 1981-12-28 | 1983-07-07 | Fujitsu Ltd | 半導体装置用基板の製造方法 |
US4554570A (en) * | 1982-06-24 | 1985-11-19 | Rca Corporation | Vertically integrated IGFET device |
US4571818A (en) * | 1983-09-29 | 1986-02-25 | At&T Bell Laboratories | Isolation process for high-voltage semiconductor devices |
US4536945A (en) * | 1983-11-02 | 1985-08-27 | National Semiconductor Corporation | Process for producing CMOS structures with Schottky bipolar transistors |
-
1984
- 1984-07-13 DE DE8484108241T patent/DE3478170D1/de not_active Expired
- 1984-07-13 EP EP84108241A patent/EP0134504B1/de not_active Expired
-
1989
- 1989-01-06 US US07/478,044 patent/US5079183A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0134504A1 (de) | 1985-03-20 |
US5079183A (en) | 1992-01-07 |
EP0134504B1 (de) | 1989-05-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) |