DE3447874C2 - - Google Patents

Info

Publication number
DE3447874C2
DE3447874C2 DE3447874A DE3447874A DE3447874C2 DE 3447874 C2 DE3447874 C2 DE 3447874C2 DE 3447874 A DE3447874 A DE 3447874A DE 3447874 A DE3447874 A DE 3447874A DE 3447874 C2 DE3447874 C2 DE 3447874C2
Authority
DE
Germany
Prior art keywords
substrate
silicon
metal atoms
elements
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3447874A
Other languages
German (de)
English (en)
Other versions
DE3447874A1 (de
Inventor
Franz 7030 Boeblingen De Kuenstler
Lotar 7303 Neuhausen De Liebing
Kurt 7500 Karlsruhe De Langer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Deutsches Zentrum fuer Luft und Raumfahrt eV
Original Assignee
Deutsches Zentrum fuer Luft und Raumfahrt eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsches Zentrum fuer Luft und Raumfahrt eV filed Critical Deutsches Zentrum fuer Luft und Raumfahrt eV
Priority to DE3447874A priority Critical patent/DE3447874A1/de
Publication of DE3447874A1 publication Critical patent/DE3447874A1/de
Application granted granted Critical
Publication of DE3447874C2 publication Critical patent/DE3447874C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H10F77/1645—Polycrystalline semiconductors including only Group IV materials including microcrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
DE3447874A 1984-12-31 1984-12-31 Verfahren zur herstellung von photozellen mit mehreren elementen in serie Granted DE3447874A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE3447874A DE3447874A1 (de) 1984-12-31 1984-12-31 Verfahren zur herstellung von photozellen mit mehreren elementen in serie

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3447874A DE3447874A1 (de) 1984-12-31 1984-12-31 Verfahren zur herstellung von photozellen mit mehreren elementen in serie

Publications (2)

Publication Number Publication Date
DE3447874A1 DE3447874A1 (de) 1986-07-03
DE3447874C2 true DE3447874C2 (OSRAM) 1989-08-10

Family

ID=6254160

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3447874A Granted DE3447874A1 (de) 1984-12-31 1984-12-31 Verfahren zur herstellung von photozellen mit mehreren elementen in serie

Country Status (1)

Country Link
DE (1) DE3447874A1 (OSRAM)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4174561A (en) * 1976-02-09 1979-11-20 Semicon, Inc. Method of fabricating high intensity solar energy converter
US4320247A (en) * 1980-08-06 1982-03-16 Massachusetts Institute Of Technology Solar cell having multiple p-n junctions and process for producing same

Also Published As

Publication number Publication date
DE3447874A1 (de) 1986-07-03

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: DEUTSCHE FORSCHUNGSANSTALT FUER LUFT- UND RAUMFAHR

8339 Ceased/non-payment of the annual fee