DE3382653D1 - Chinoxalin-polymere mit biphenylen-endgruppen und ihre verwendung als isolierueberzuege in halbleiterelementen. - Google Patents
Chinoxalin-polymere mit biphenylen-endgruppen und ihre verwendung als isolierueberzuege in halbleiterelementen.Info
- Publication number
- DE3382653D1 DE3382653D1 DE8383201633T DE3382653T DE3382653D1 DE 3382653 D1 DE3382653 D1 DE 3382653D1 DE 8383201633 T DE8383201633 T DE 8383201633T DE 3382653 T DE3382653 T DE 3382653T DE 3382653 D1 DE3382653 D1 DE 3382653D1
- Authority
- DE
- Germany
- Prior art keywords
- chinoxaline
- polymers
- semiconductor elements
- end groups
- insulating coats
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- IFVTZJHWGZSXFD-UHFFFAOYSA-N biphenylene Chemical group C1=CC=C2C3=CC=CC=C3C2=C1 IFVTZJHWGZSXFD-UHFFFAOYSA-N 0.000 title 1
- 229920000642 polymer Polymers 0.000 title 1
- 150000003252 quinoxalines Chemical class 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/0683—Polycondensates containing six-membered rings, condensed with other rings, with nitrogen atoms as the only ring hetero atoms
- C08G73/0694—Polycondensates containing six-membered rings, condensed with other rings, with nitrogen atoms as the only ring hetero atoms with only two nitrogen atoms in the ring, e.g. polyquinoxalines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/303—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups H01B3/38 or H01B3/302
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Medicinal Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Formation Of Insulating Films (AREA)
- Laminated Bodies (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/443,251 US4507333A (en) | 1982-11-22 | 1982-11-22 | Biphenylene end-capped quinoxaline polymers and their use as insulating coatings for semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3382653D1 true DE3382653D1 (de) | 1993-03-04 |
DE3382653T2 DE3382653T2 (de) | 1993-07-15 |
Family
ID=23760035
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383201633T Expired - Fee Related DE3382653T2 (de) | 1982-11-22 | 1983-11-17 | Chinoxalin-polymere mit biphenylen-endgruppen und ihre verwendung als isolierueberzuege in halbleiterelementen. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4507333A (de) |
EP (1) | EP0110465B1 (de) |
JP (1) | JPS5996133A (de) |
DE (1) | DE3382653T2 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS601846A (ja) * | 1983-06-18 | 1985-01-08 | Toshiba Corp | 多層配線構造の半導体装置とその製造方法 |
US4914177A (en) * | 1987-07-13 | 1990-04-03 | American Telephone And Telegraph Company | Polyquinoxaline polymers, and articles comprising same |
JP2557898B2 (ja) * | 1987-07-31 | 1996-11-27 | 株式会社東芝 | 半導体装置 |
US5024969A (en) * | 1990-02-23 | 1991-06-18 | Reche John J | Hybrid circuit structure fabrication methods using high energy electron beam curing |
US5550405A (en) * | 1994-12-21 | 1996-08-27 | Advanced Micro Devices, Incorporated | Processing techniques for achieving production-worthy, low dielectric, low interconnect resistance and high performance ICS |
US6248171B1 (en) * | 1998-09-17 | 2001-06-19 | Silicon Valley Group, Inc. | Yield and line width performance for liquid polymers and other materials |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3852243A (en) * | 1969-07-31 | 1974-12-03 | Boeing Co | Polyphenylquinoxalines containing latent crosslinking groups |
US3966729A (en) * | 1975-05-19 | 1976-06-29 | The United States Of America As Represented By The Secretary Of The Air Force | Addition curable phenyl-quinoxaline compositions and their synthesis |
DD131831A3 (de) * | 1975-06-03 | 1978-07-26 | Heinz Raubach | Verwendung von polyimidchinoxalinen,insbesondere polyimidphenylchinoxalinen,als ueberzugsmaterial fuer waermebestaendige elektroisolierungen |
US4022746A (en) * | 1975-09-10 | 1977-05-10 | The United States Of America As Represented By The Secretary Of The Air Force | Bis-ethynyl heterocyclic compositions and method of snythesis |
US4125725A (en) * | 1976-04-06 | 1978-11-14 | The United States Of America As Represented By The Secretary Of The Navy | Phenylated carboxyquinoxalines |
US4098825A (en) * | 1977-01-24 | 1978-07-04 | The United States Of America As Represented By The Secretary Of The Air Force | Acetylene-substituted aromatic benzils and acetylene-terminated quinoxaline compositions |
FR2453873A1 (fr) * | 1979-01-19 | 1980-11-07 | Inst Francais Du Petrole | Resines de polyarylquinoxalines thermodurcissables utilisables notamment dans des vernis d'emaillage |
US4507462A (en) * | 1981-08-03 | 1985-03-26 | Polymer Science | Low molecular weight aromatic polymers with biphenylene end groups |
US4375536A (en) * | 1981-11-12 | 1983-03-01 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Polyphenylquinoxalines containing pendant phenylethynyl and ethynyl groups |
-
1982
- 1982-11-22 US US06/443,251 patent/US4507333A/en not_active Expired - Fee Related
-
1983
- 1983-09-19 JP JP58171421A patent/JPS5996133A/ja active Granted
- 1983-11-17 DE DE8383201633T patent/DE3382653T2/de not_active Expired - Fee Related
- 1983-11-17 EP EP83201633A patent/EP0110465B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0110465A2 (de) | 1984-06-13 |
JPS5996133A (ja) | 1984-06-02 |
EP0110465B1 (de) | 1993-01-20 |
EP0110465A3 (en) | 1987-09-09 |
DE3382653T2 (de) | 1993-07-15 |
JPS6241877B2 (de) | 1987-09-04 |
US4507333A (en) | 1985-03-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |