DE3277352D1 - Improved emitter structure for semiconductor devices - Google Patents

Improved emitter structure for semiconductor devices

Info

Publication number
DE3277352D1
DE3277352D1 DE8282103228T DE3277352T DE3277352D1 DE 3277352 D1 DE3277352 D1 DE 3277352D1 DE 8282103228 T DE8282103228 T DE 8282103228T DE 3277352 T DE3277352 T DE 3277352T DE 3277352 D1 DE3277352 D1 DE 3277352D1
Authority
DE
Germany
Prior art keywords
semiconductor devices
emitter structure
improved emitter
improved
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282103228T
Other languages
English (en)
Inventor
Azuma Makoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP6596681A external-priority patent/JPS57181159A/ja
Priority claimed from JP6595181A external-priority patent/JPS57181162A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3277352D1 publication Critical patent/DE3277352D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE8282103228T 1981-04-30 1982-04-16 Improved emitter structure for semiconductor devices Expired DE3277352D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6596681A JPS57181159A (en) 1981-04-30 1981-04-30 Transistor
JP6595181A JPS57181162A (en) 1981-04-30 1981-04-30 Gate turn off thyristor

Publications (1)

Publication Number Publication Date
DE3277352D1 true DE3277352D1 (en) 1987-10-22

Family

ID=26407117

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282103228T Expired DE3277352D1 (en) 1981-04-30 1982-04-16 Improved emitter structure for semiconductor devices

Country Status (2)

Country Link
EP (1) EP0064614B1 (de)
DE (1) DE3277352D1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3424222A1 (de) * 1984-06-30 1986-01-09 Brown, Boveri & Cie Ag, 6800 Mannheim Abschaltbarer thyristor
EP0285923B1 (de) * 1987-04-07 1993-10-06 BBC Brown Boveri AG Gate-Ausschaltthyristor und Verfahren zu dessen Herstellung
EP0438700A1 (de) * 1990-01-25 1991-07-31 Asea Brown Boveri Ag Abschaltbares, MOS-gesteuertes Leistungshalbleiter-Bauelement sowie Verfahren zu dessen Herstellung
DE19640242C2 (de) * 1996-09-30 2002-01-10 Infineon Technologies Ag Kathodenanordnung für GTO-Thyristor
DE19821240C1 (de) * 1998-05-12 1999-08-12 Siemens Ag Abschaltbarer Thyristor
EP1193766A4 (de) * 1999-04-30 2007-05-30 Rohm Co Ltd Halbleiteranordnung mit bipolaren transistoren
EP1619724A4 (de) * 2003-04-09 2008-11-12 Kansai Electric Power Co Gate-ausschalt-thyristor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1519530A (fr) * 1965-03-17 1968-04-05 Rca Corp Dispositif semi-conducteur
FR2374743A1 (fr) * 1976-12-20 1978-07-13 Radiotechnique Compelec Transistor multicouche a emetteur compose
FR2417854A1 (fr) * 1978-02-21 1979-09-14 Radiotechnique Compelec Transistor comportant une zone resistive integree dans sa region d'emetteur
GB2026236B (en) * 1978-07-20 1983-02-02 Gen Electric Power transistor

Also Published As

Publication number Publication date
EP0064614A3 (en) 1984-11-07
EP0064614B1 (de) 1987-09-16
EP0064614A2 (de) 1982-11-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee