DE3221304A1 - Process for producing dielectrically insulated solid-state circuits - Google Patents

Process for producing dielectrically insulated solid-state circuits

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Publication number
DE3221304A1
DE3221304A1 DE19823221304 DE3221304A DE3221304A1 DE 3221304 A1 DE3221304 A1 DE 3221304A1 DE 19823221304 DE19823221304 DE 19823221304 DE 3221304 A DE3221304 A DE 3221304A DE 3221304 A1 DE3221304 A1 DE 3221304A1
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Germany
Prior art keywords
silicon
layer
silicon dioxide
areas
monocrystalline
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19823221304
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German (de)
Inventor
Fritz Günter Dipl.-Phys. Dr.rer.nat 7800 Freiburg Adam
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
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Deutsche ITT Industries GmbH
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Application filed by Deutsche ITT Industries GmbH filed Critical Deutsche ITT Industries GmbH
Priority to DE19823221304 priority Critical patent/DE3221304A1/en
Publication of DE3221304A1 publication Critical patent/DE3221304A1/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76267—Vertical isolation by silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76281—Lateral isolation by selective oxidation of silicon

Abstract

To produce dielectrically insulated solid-state circuits, specified regions of the principal faces of a silicon single-crystal substrate are converted into silicon dioxide layers and the entire surface is then coated with a polysilicon layer. Laser or electron beam treatment is used to epitaxially recrystallise those regions of the polysilicon layer which adjoin the single-crystal substrate horizontally between the silicon dioxide layers. The recrystallisation process is extended to the entire polysilicon layer and the single-crystal silicon layer produced at the surface regions situated above the regions where the single-crystal silicon layer is joined to the silicon substrate is converted into silicon dioxide, thereby producing single-crystal silicon islands which are surrounded by silicon dioxide and in which the solid-state circuits can then be arranged. <IMAGE>

Description

Verfahren zum Herstellen dielektrisch isolierterProcess for producing dielectrically isolated

Festkörperschaltkreise Die vorliegende Erfindung betrifft ein Verfahren zum Herstellen dielektrisch isolierter Festkörperschaltkreise, die in einem einkristallinen Siliciumträger angeordnet sind.Solid State Circuits The present invention relates to a method for the production of dielectrically isolated solid-state circuits in a single-crystal Silicon carriers are arranged.

Bei der Herstellung von dielektrisch isolierten Festkörperschaltkreisen für Hochfrequenz- oder Hochvolt-Anwendungen wird vielfach von Saphirsubstraten ausgegangen. Diese sind jedoch teuer.In the manufacture of dielectrically isolated solid-state circuits for high-frequency or high-voltage applications, sapphire substrates are often assumed. However, these are expensive.

Aus "IEEE Transactions on Electron Devices", Januar 1980, Seite 290 ist ein Verfahren zum Herstellen von integrierten Schaltkreisen bekannt, wobei deren aktive Teile in Zonen (Inseln) aus mit Laserstrahlen getemperten Polysilicium angeordnet sind, die von Umrandungen bildenden Zonen aus Siliciumdioxid umgeben sind.From "IEEE Transactions on Electron Devices", January 1980, p. 290 a method for producing integrated circuits is known, the active parts arranged in zones (islands) made of polysilicon annealed with laser beams which are surrounded by border-forming zones of silicon dioxide.

Ausgehend von einem Siliciumsubstrat wird dabei zunächst eine Siliciumnitridschicht als Isolierung und auf dieser wiederum eine Schicht aus Polysilicium abgeschieden. Mit Hilfe einer Siliciumnitridmaske wird dann die Polysiliciumschicht nach dem LOCOS-Verfahren an den vorgesehenen Stellen oxidiert, so daß die angestrebten Polysiliciuminseln erhalten blieben.Starting from a silicon substrate, a silicon nitride layer is initially created as insulation and on this in turn a layer of polysilicon is deposited. With the aid of a silicon nitride mask, the polysilicon layer is then formed using the LOCOS method oxidized at the intended locations, so that the desired polysilicon islands remained.

Ein weiteres Verfahren ist aus "IEEE Electronic Devices Letters", Nr. 10, Oktober 1980, Seite 214 bekannt. Ausgehend von einem Quarz substrat und einer darauf abgeschiedenen Polysiliciumschicht wird wiederum mittels LOCOS-Verfahren an bestimmten Stellen das Polysilicium in SiO2 umgewandelt, so daß Inseln aus Polysilicium entstehen, die dann mittels Laserbestrahlung rekristallisiert werden. In diesen isolierten polykristallinen Siliciuminseln werden denn die Bauelemente wie z.B. MOS-FETs ausgebildet.Another method is from "IEEE Electronic Devices Letters", No. 10, October 1980, page 214. Starting from a quartz substrate and one separated on it Polysilicon layer is in turn by means of LOCOS process converts the polysilicon into SiO2 at certain points, so that Polysilicon islands are created, which are then recrystallized by means of laser irradiation will. The components are then located in these isolated polycrystalline silicon islands such as MOS-FETs.

Die vorliegende Erfindung, wie sie in den Ansprüchen gekennzeichnet ist, löst dagegen die Aufgabe, ein Verfahren zum Herstellen dielektrisch isolierter Festkörperschaltkreise anzugeben, die in einkristallinen Siliciuminseln angeordnet sind.The present invention as characterized in the claims is, however, solves the problem of a method for producing dielectrically isolated Specify solid-state circuits arranged in single-crystal silicon islands are.

Die Erfindung wird an einem Ausführungsbeispiel in Verbindung mit den Figuren der beigefügten Zeichnung erläutert.The invention is based on an embodiment in connection with the figures of the accompanying drawing explained.

Die Fig. 1 bis 6 stellen einzelne Stufen der Herstellung des Ausführungsbeispiels dar.FIGS. 1 to 6 show individual stages in the production of the exemplary embodiment represent.

Ausgehend von einem einkristallinen Siliciumsubstrat 1 werden zunächst bestimmte inselförmige Bereiche der einen Hauptflache desselben in Siliciumdioxidschichten 2 umgewandelt.Starting from a monocrystalline silicon substrate 1, certain island-shaped areas of one major surface of the same in silicon dioxide layers 2 converted.

Dies kann zum einen durch lokale Oxidation mit Hilfe einer Siliciutnnitridmaske nach dem bekannten LOCOS-Verfahren geschehen oder zum anderen durch Aufbringen einer Oxidschicht über einer der auptflche des Siliciumsubstrates, und zwar thermisch oder durch CVD (chemical vapor deposition chemische Abscheidung aus der Dampfphase), dem sich ein maskiertes Abcitzen des Oxids bis hinunter auf die SiliciumsubstratoberflAche anschließt.This can be done on the one hand by local oxidation with the aid of a silicon nitride mask done according to the known LOCOS process or on the other hand by applying a Oxide layer over one of the main surfaces of the silicon substrate, namely thermally or by CVD (chemical vapor deposition), masked abrasion of the oxide down to the silicon substrate surface connects.

Sodann wird nach einer der herkömmlichen Verfahren eine polykristallille Siliciumschicht 3 über den inselförmigen Siliciumoxidschichten 2 und den freiliegenden, die Inseln umgebenden Bcreichen 4 der OberflAche des Siliciumsubstrats 1 abgeschieden (Fig. 1).Then, according to one of the conventional methods, a polycrystalline Silicon layer 3 over the island-shaped silicon oxide layers 2 and the exposed, The areas surrounding the islands 4 of the surface of the silicon substrate 1 are deposited (Fig. 1).

Innerhalb dieser Kanalnetz- oder fensterrclhmcnfornlign Bereiche 4 befindet sich die polykristalline Siliciumschicht 3 somit im direkten Kontakt mit dem Siliciumsubstrat 1.Within this sewer network or window area 4 the polycrystalline silicon layer 3 is thus in direct contact with the silicon substrate 1.

Als nächster Schritt erfolgt eine lokale Laser- oder Elektronenstrahlbehandlung der Polysil iciumschichü 3 in de Bereichen,die direkten Kontakt mit dem einkristallinen Siliciumsubstrat 1 haben. Unter Mitwirkung des letzteren als Kristallkeim wird dabei die bestrahlte und aufgeschmolzene Zone der Polysiliciumschicht 3 in einkristallines Silicium verwandelt. Durch entsprechende Führung des Strahles wird eine epitaktische Rekristallisierung auch der Teile der Polysilciumschicht 3 bewirkt, die über den Siliciumoxidschichten 2 liegen (Fig. 3), so daß letztlich die gesamte Polysiliciumschicht 3 in den einkristallinen Zustand tbergeführt wird.The next step is local laser or electron beam treatment the polysilicon layer 3 in the areas that are in direct contact with the monocrystalline Have silicon substrate 1. With the participation of the latter as a crystal nucleus is thereby the irradiated and melted zone of the polysilicon layer 3 in monocrystalline Transforms silicon. Appropriate guidance of the beam becomes epitaxial Recrystallization also causes the parts of the polysilicon layer 3, which over the Silicon oxide layers 2 are (Fig. 3), so that ultimately the entire polysilicon layer 3 is converted into the monocrystalline state.

Durch eine zweite lokale Oxidation unter Verwendung einer Siliciumnitridmaske 6 werden die Bereiche der einkristallinen Siliciumschicht 5 in Siliciumdioxidzonen 2' verwandelt, die an das Siliciumsubstrat 1 angrenzen (Fig. 4, Fig. 5).By a second local oxidation using a silicon nitride mask 6 become the regions of the single crystal silicon layer 5 in silicon dioxide zones 2 ', which adjoin the silicon substrate 1 (Fig. 4, Fig. 5).

Nach Abätzen der Siliciumnitridmaske resultiert die in Fig. 6 gezeigte Struktur, die völlig isolierte einkristalline Siliciuminseln 7 zeigt, in denen Schaltkreise oder Schaltkreisteile nach bekannten Verfahrensschritten angeordnet werden können. Dickere Inselbereiche können im Anschluß daran durch weitere Siliciumbeschichtungen, und zwar direkt epitaktisch oder über Polysilicium mit Rekristallisierung und wiederholte lokale Oxidation unter Ausbildung der Umrandungszonen aus Siliciumdioxid erhalten werden.After the silicon nitride mask has been etched off, that shown in FIG. 6 results Structure showing completely isolated monocrystalline silicon islands 7 in which circuits or circuit parts can be arranged according to known method steps. Thicker island areas can then be replaced by further silicon coatings, directly epitaxially or via polysilicon with recrystallization and repeated local oxidation obtained with the formation of the peripheral zones of silicon dioxide will.

Das vorliegende Verfahren ermöc;lichst also die Herstellung einer Oxid-isolierten einkrista]#linen Siliciumzoiie oder Insel, die gegenüber einem einkristallinen Siliciumsubstrat wie auch wie auch gegenüber weiteren Siliciuminseln isoliert ist.The present process therefore enables the production of a Oxide-isolated single crystal or island, which is opposite to a monocrystalline silicon substrate as well as against other silicon islands is isolated.

Claims (3)

Patentansprüche Verfahren zum Herstellen dielektrisch isolierter, in einem einkristallinen Siliciumkörper angeordneter Festkörperschaltkreise, gekennzeichnet durch folgende Schritte: - Umwandeln festgelegter Bereiche der Hauptflächen eines einkristallinen Siliciumsubstrats (1) in Siliciumdioxidschichten (2) - Abscheiden einer Polysiliciumschicht (3) auf den Siliciumdioxidschichten (2)und den von diesen nichtabgedeckten Bereichen (4) der Oberfläche des Siliciumsubstrates (1), - epitaktische Rekristallisation durch Laser- oder Elektronenstrahlbehandlung der zwischen den Siliciumdioxidsciiichten (2) an das einkristalline Substrat (1) anstoßenden Schichtbereichen der Polysiliciumschicht (3), - Ausdehnung der Rekristallisation auf die gesamte Polysiliciumschicht zur Ausbildung einer einkristallinen Schicht (5) - Umwandeln der einkristallinen Siliciumschicht (5) in SiliciumdioxidzoneA2lXnerhalb der Oberflächenbereiche die über den Verbindungsbereichen der einkristallinen Siliciumschicht (5) zum Siliciumsubstrat (1) liegen. Claims method for producing dielectrically isolated, Solid-state circuits arranged in a monocrystalline silicon body, characterized by the following steps: - Converting specified areas of the main surfaces of a Monocrystalline silicon substrate (1) in silicon dioxide layers (2) - deposit a polysilicon layer (3) on the silicon dioxide layers (2) and those of them uncovered areas (4) of the surface of the silicon substrate (1), - epitaxial Recrystallization by laser or electron beam treatment of the between the Silicon dioxide layers (2) on layer areas adjoining the monocrystalline substrate (1) the polysilicon layer (3), - extension of the recrystallization to the entire Polysilicon layer to form a single-crystal layer (5) - converting of the monocrystalline silicon layer (5) in silicon dioxide zone A2lX within the surface areas those over the connection areas of the single-crystal silicon layer (5) to the silicon substrate (1) lie. 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß die auf bestimmte Bereiche begrenzte Umwandlung des einkristallinen Siliciumsubstrats (1) (erster Verfahrensschritt) oder der einkristallinen Siliciumschicht (5) (letzter Verfahrensschritt) unter Zuhilfenahme einer Siliciumnitridmaske durch lokale Oxidation oder durch Erzeugen einer die ganze Oberfläche der jeweiligen Siliciumschicht deckenden Siliciumdioxidschicht und nachfolgenden Durchätzen bis auf die Siliciumschicht unter Zuhilfenahme einer Siliciumnitridmaske bewirkt wird.2. The method according to claim 1, characterized in that the on Conversion of the monocrystalline silicon substrate limited to certain areas (1) (first process step) or the monocrystalline silicon layer (5) (last Process step) with the aid of a silicon nitride mask by local oxidation or by producing one covering the entire surface of the respective silicon layer Silicon dioxide layer and subsequent through-etching except for Silicon layer is effected with the aid of a silicon nitride mask. 3. Verfahren nach Anspruch 1 und 2, dadurch gekennzichnet, daß zwecks Erzeugung einer dickeren Schicht (5) der letzte Verfahrensschritt jedesmal wiederholt wird, nachdem eine oder mehrere weitere Si-Schichten epitaktisch aufgebracht worden sind.3. The method according to claim 1 and 2, characterized in that for the purpose Production of a thicker layer (5) repeats the last process step each time is after one or more further Si layers have been epitaxially applied are.
DE19823221304 1982-06-05 1982-06-05 Process for producing dielectrically insulated solid-state circuits Withdrawn DE3221304A1 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986002198A1 (en) * 1984-10-05 1986-04-10 Michel Haond Method for making monocrystalline silicon islands electrically isolated from each other
US5338692A (en) * 1989-04-27 1994-08-16 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface
US5385865A (en) * 1990-04-26 1995-01-31 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2535813C2 (en) * 1975-08-11 1980-11-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of monocrystalline layers of semiconductor material on an electrically insulating substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2535813C2 (en) * 1975-08-11 1980-11-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of monocrystalline layers of semiconductor material on an electrically insulating substrate

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
US-Z: Electronics, 3. Juli 1980, H.3, S.44,45 *
US-Z: Electronics, 8. Juni 1980, Bd.43, H.12, S. 88 bis 94 *
US-Z: IBM Technical Dislcosure Bulletin, Bd.24, H.6, 1981, S.2955-2957 *
US-Z: IEEE Transactions on Electron Devices, 1980, Bd. ED-27, H.1, S.290 bis 293 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986002198A1 (en) * 1984-10-05 1986-04-10 Michel Haond Method for making monocrystalline silicon islands electrically isolated from each other
FR2571544A1 (en) * 1984-10-05 1986-04-11 Haond Michel PROCESS FOR THE PRODUCTION OF MONOCRYSTALLINE SILICON ILOTS ISOLATED ELECTRICALLY FROM ONE OF OTHERS
US5338692A (en) * 1989-04-27 1994-08-16 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface
US5396089A (en) * 1989-04-27 1995-03-07 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface
US5385865A (en) * 1990-04-26 1995-01-31 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface

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