DE3201146A1 - Photoleitfaehiges element - Google Patents

Photoleitfaehiges element

Info

Publication number
DE3201146A1
DE3201146A1 DE19823201146 DE3201146A DE3201146A1 DE 3201146 A1 DE3201146 A1 DE 3201146A1 DE 19823201146 DE19823201146 DE 19823201146 DE 3201146 A DE3201146 A DE 3201146A DE 3201146 A1 DE3201146 A1 DE 3201146A1
Authority
DE
Germany
Prior art keywords
photoconductive element
element according
layer
amorphous
content
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19823201146
Other languages
German (de)
English (en)
Other versions
DE3201146C2 (https=
Inventor
Tadaji Yokohama Kanagawa Fukuda
Junichiro Kanbe
Shigeru Yamato Kanagawa Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP56005524A external-priority patent/JPS57119356A/ja
Priority claimed from JP56005526A external-priority patent/JPS57119358A/ja
Priority claimed from JP56005525A external-priority patent/JPS57119357A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3201146A1 publication Critical patent/DE3201146A1/de
Application granted granted Critical
Publication of DE3201146C2 publication Critical patent/DE3201146C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G03G5/08228—Silicon-based comprising one or two silicon based layers at least one with varying composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
DE19823201146 1981-01-16 1982-01-15 Photoleitfaehiges element Granted DE3201146A1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP56005524A JPS57119356A (en) 1981-01-16 1981-01-16 Photoconductive member
JP56005526A JPS57119358A (en) 1981-01-16 1981-01-16 Photoconductive member
JP56005525A JPS57119357A (en) 1981-01-16 1981-01-16 Photoconductive member

Publications (2)

Publication Number Publication Date
DE3201146A1 true DE3201146A1 (de) 1982-09-30
DE3201146C2 DE3201146C2 (https=) 1988-02-18

Family

ID=27276794

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19823201146 Granted DE3201146A1 (de) 1981-01-16 1982-01-15 Photoleitfaehiges element

Country Status (3)

Country Link
US (3) US4539283A (https=)
DE (1) DE3201146A1 (https=)
GB (1) GB2094550B (https=)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3411475A1 (de) * 1983-03-28 1984-10-04 Canon K.K., Tokio/Tokyo Lichtempfangendes aufzeichnungselement
FR2549613A1 (fr) * 1983-07-18 1985-01-25 Canon Kk Element photoconducteur
DE3430940A1 (de) * 1983-08-23 1985-03-14 Sharp K.K., Osaka Photorezeptor fuer die elektrophotographie
EP0139961A1 (en) * 1983-08-16 1985-05-08 Kanegafuchi Chemical Industry Co., Ltd. Photoreceptor for electrophotography
DE3521950A1 (de) * 1984-06-21 1986-01-02 Stanley Electric Co. Ltd., Tokio/Tokyo Lichtempfaenger fuer elektrofotografie und verfahren zu seiner herstellung
EP0211421A1 (en) * 1985-08-03 1987-02-25 Matsushita Electric Industrial Co., Ltd. Electrophotographic photoreceptor
EP0250916A1 (en) * 1986-06-10 1988-01-07 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer and process for preparing same
EP0261651A1 (en) * 1986-09-26 1988-03-30 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
US5108860A (en) * 1989-07-19 1992-04-28 Siemens Aktiengesellschaft Electrophotographic recording material and method for the manufacture thereof
EP0531625A1 (en) * 1991-05-30 1993-03-17 Canon Kabushiki Kaisha Light-receiving member

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5582947A (en) * 1981-01-16 1996-12-10 Canon Kabushiki Kaisha Glow discharge process for making photoconductive member
US5258250A (en) * 1981-01-16 1993-11-02 Canon Kabushiki Kaisha Photoconductive member
US4795688A (en) * 1982-03-16 1989-01-03 Canon Kabushiki Kaisha Layered photoconductive member comprising amorphous silicon
JPH0658966B2 (ja) * 1982-05-17 1994-08-03 キヤノン株式会社 半導体素子
US4591892A (en) * 1982-08-24 1986-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectric conversion device
DE3370565D1 (en) * 1982-09-27 1987-04-30 Toshiba Kk Thin film electroluminescence device and method of manufacturing the same
US4617246A (en) * 1982-11-04 1986-10-14 Canon Kabushiki Kaisha Photoconductive member of a Ge-Si layer and Si layer
AU549925B2 (en) * 1983-11-28 1986-02-20 Nitsuko Ltd. Automatic telephone hold releasing circuit
JPS6123158A (ja) * 1984-07-11 1986-01-31 Stanley Electric Co Ltd 電子写真用感光体
JPH0711706B2 (ja) * 1984-07-14 1995-02-08 ミノルタ株式会社 電子写真感光体
JPH0740138B2 (ja) * 1984-07-14 1995-05-01 ミノルタ株式会社 電子写真感光体
US4666803A (en) * 1984-11-26 1987-05-19 Kabushiki Kaisha Toshiba Photoconductive member for exhibiting photoconductivity upon illumination by electromagnetic light in the visible to ultraviolet range
JP2962851B2 (ja) * 1990-04-26 1999-10-12 キヤノン株式会社 光受容部材
JP2876545B2 (ja) * 1990-10-24 1999-03-31 キヤノン株式会社 光受容部材
US5284730A (en) * 1990-10-24 1994-02-08 Canon Kabushiki Kaisha Electrophotographic light-receiving member
US5392098A (en) * 1991-05-30 1995-02-21 Canon Kabushiki Kaisha Electrophotographic apparatus with amorphous silicon-carbon photosensitive member driven relative to light source
JP2809543B2 (ja) * 1992-03-10 1998-10-08 シャープ株式会社 光導電型液晶ライトバルブ
US6197463B1 (en) 1998-05-15 2001-03-06 Mitsubishi Chemical Corporation Electrophotographic photosensitive bodies
TW200825563A (en) * 2006-12-11 2008-06-16 Innolux Display Corp Light supply device and liquid crystal display device using the same
JP5544343B2 (ja) * 2010-10-29 2014-07-09 東京エレクトロン株式会社 成膜装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2746967A1 (de) * 1977-10-19 1979-04-26 Siemens Ag Drucktrommel fuer elektrostatisches kopierverfahren
DE2855718A1 (de) * 1977-12-22 1979-06-28 Canon Kk Lichtempfindliches element fuer die elektrophotographie und verfahren zu dessen herstellung
GB2029642A (en) * 1978-08-18 1980-03-19 Hitachi Ltd Solid state imaging device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4217379A (en) 1976-07-06 1980-08-12 Salvador Silvano E Method for creating a simulated brick surface or the like
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
US4471042A (en) * 1978-05-04 1984-09-11 Canon Kabushiki Kaisha Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium
JPS554040A (en) * 1978-06-26 1980-01-12 Hitachi Ltd Photoconductive material
US4254429A (en) * 1978-07-08 1981-03-03 Shunpei Yamazaki Hetero junction semiconductor device
US4251289A (en) * 1979-12-28 1981-02-17 Exxon Research & Engineering Co. Gradient doping in amorphous silicon
US4253882A (en) * 1980-02-15 1981-03-03 University Of Delaware Multiple gap photovoltaic device
US4460669A (en) * 1981-11-26 1984-07-17 Canon Kabushiki Kaisha Photoconductive member with α-Si and C, U or D and dopant
US4460670A (en) * 1981-11-26 1984-07-17 Canon Kabushiki Kaisha Photoconductive member with α-Si and C, N or O and dopant

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2746967A1 (de) * 1977-10-19 1979-04-26 Siemens Ag Drucktrommel fuer elektrostatisches kopierverfahren
DE2855718A1 (de) * 1977-12-22 1979-06-28 Canon Kk Lichtempfindliches element fuer die elektrophotographie und verfahren zu dessen herstellung
GB2029642A (en) * 1978-08-18 1980-03-19 Hitachi Ltd Solid state imaging device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3411475A1 (de) * 1983-03-28 1984-10-04 Canon K.K., Tokio/Tokyo Lichtempfangendes aufzeichnungselement
FR2549613A1 (fr) * 1983-07-18 1985-01-25 Canon Kk Element photoconducteur
EP0139961A1 (en) * 1983-08-16 1985-05-08 Kanegafuchi Chemical Industry Co., Ltd. Photoreceptor for electrophotography
DE3430940A1 (de) * 1983-08-23 1985-03-14 Sharp K.K., Osaka Photorezeptor fuer die elektrophotographie
DE3521950A1 (de) * 1984-06-21 1986-01-02 Stanley Electric Co. Ltd., Tokio/Tokyo Lichtempfaenger fuer elektrofotografie und verfahren zu seiner herstellung
EP0211421A1 (en) * 1985-08-03 1987-02-25 Matsushita Electric Industrial Co., Ltd. Electrophotographic photoreceptor
EP0250916A1 (en) * 1986-06-10 1988-01-07 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer and process for preparing same
EP0261651A1 (en) * 1986-09-26 1988-03-30 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
US5108860A (en) * 1989-07-19 1992-04-28 Siemens Aktiengesellschaft Electrophotographic recording material and method for the manufacture thereof
EP0531625A1 (en) * 1991-05-30 1993-03-17 Canon Kabushiki Kaisha Light-receiving member
US5582944A (en) * 1991-05-30 1996-12-10 Canon Kabushiki Kaisha Light receiving member

Also Published As

Publication number Publication date
US5141836A (en) 1992-08-25
US4609601A (en) 1986-09-02
GB2094550A (en) 1982-09-15
DE3201146C2 (https=) 1988-02-18
US4539283A (en) 1985-09-03
GB2094550B (en) 1985-04-17

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8380 Miscellaneous part iii

Free format text: SPALTE 2, ZEILE 68 "(SI(PFEIL ABWAERTS)C(PFEIL ABWAERTS)C(PFEIL ABWAERTS)1(PFEIL ABWAERTS)(PFEIL ABWAERTS)-(PFEIL ABWAERTS)(PFEIL ABWAERTS)B(PFEIL ABWAERTS))(PFEIL ABWAERTS)C(PFEIL ABWAERTS)H(PFEIL ABWAERTS)1(PFEIL ABWAERTS)(PFEIL ABWAERTS)-(PFEIL ABWAERTS)(PFEIL ABWAERTS)C(PFEIL ABWAERTS), WORIN B = 0,1 BIS 0,5" AENDERN IN "(SI(PFEIL ABWAERTS)B(PFEIL ABWAERTS)C(PFEIL ABWAERTS)1(PFEIL ABWAERTS)(PFEIL ABWAERTS)-(PFEIL ABWAERTS)(PFEIL ABWAERTS)B(PFEIL ABWAERTS))(PFEIL ABWAERTS)C(PFEIL ABWAERTS)H(P

8363 Opposition against the patent
8380 Miscellaneous part iii

Free format text: SPALTE 2, ZEILE 68 "DURCH DIE FORMEL (SI(PFEIL ABWAERTS)C(PFEIL ABWAERTS)C(PFEIL ABWAERTS)1(PFEIL ABWAERTS)(PFEIL ABWAERTS)-(PFEIL ABWAERTS)(PFEIL ABWAERTS)B(PFEIL ABWAERTS))(PFEIL ABWAERTS)C(PFEIL ABWAERTS)H(PFEIL ABWAERTS)1(PFEIL ABWAERTS)(PFEIL ABWAERTS)-(PFEIL ABWAERTS)(PFEIL ABWAERTS)C(PFEIL ABWAERTS) WORIN B = 0,1 BIS 0,5" AENDERN IN "DURCH DIE FORMEL (SI(PFEIL ABWAERTS)B(PFEIL ABWAERTS)C(PFEIL ABWAERTS)1(PFEIL ABWAERTS)(PFEIL ABWAERTS)-(PFEIL ABWAERTS)(PFEIL ABWAERTS)B(PFEIL ABWAERTS))(P

8365 Fully valid after opposition proceedings