DE3069124D1 - Write/restore/erase signal generator for volatile/non-volatile memory system - Google Patents

Write/restore/erase signal generator for volatile/non-volatile memory system

Info

Publication number
DE3069124D1
DE3069124D1 DE8080900622T DE3069124T DE3069124D1 DE 3069124 D1 DE3069124 D1 DE 3069124D1 DE 8080900622 T DE8080900622 T DE 8080900622T DE 3069124 T DE3069124 T DE 3069124T DE 3069124 D1 DE3069124 D1 DE 3069124D1
Authority
DE
Germany
Prior art keywords
volatile
restore
write
non
signal generator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080900622T
Other languages
English (en)
Inventor
George Corbin Lockwood
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Corp
Original Assignee
NCR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US2012379A priority Critical
Application filed by NCR Corp filed Critical NCR Corp
Priority to PCT/US1980/000249 priority patent/WO1980001972A1/en
Application granted granted Critical
Publication of DE3069124D1 publication Critical patent/DE3069124D1/de
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C14/00Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by G11C11/00
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by G11C11/00
    • G11C5/14Power supply arrangements, e.g. Power down/chip (de)selection, layout of wiring/power grids, multiple supply levels
    • G11C5/145Applications of charge pumps ; Boosted voltage circuits ; Clamp circuits therefor
DE8080900622T 1979-03-13 1980-03-10 Write/restore/erase signal generator for volatile/non-volatile memory system Expired DE3069124D1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US2012379A true 1979-03-13 1979-03-13
PCT/US1980/000249 WO1980001972A1 (en) 1979-03-13 1980-03-10 Write/restore/erase signal generator for volatile/non-volatile memory system

Publications (1)

Publication Number Publication Date
DE3069124D1 true DE3069124D1 (en) 1984-10-18

Family

ID=21796893

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080900622T Expired DE3069124D1 (en) 1979-03-13 1980-03-10 Write/restore/erase signal generator for volatile/non-volatile memory system

Country Status (5)

Country Link
US (1) US4405868A (de)
EP (1) EP0027450B1 (de)
JP (1) JPS56500108A (de)
DE (1) DE3069124D1 (de)
WO (1) WO1980001972A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2094086B (en) * 1981-03-03 1985-08-14 Tokyo Shibaura Electric Co Non-volatile semiconductor memory system
JPH0157436B2 (de) * 1981-03-13 1989-12-05 Fujitsu Ltd
US4442481A (en) * 1982-04-07 1984-04-10 Honeywell Inc. Low power decoder circuit
IT1215224B (it) * 1983-08-04 1990-01-31 Ates Componenti Elettron Microcalcolatore a struttura integrata munito di memoria ram non volatile.
NL8400225A (nl) * 1984-01-25 1985-08-16 Philips Nv Schakeling voor het opwekken van de programmeerspanning van een uitwisbaar leesgeheugen.
EP0231872B1 (de) * 1986-02-03 1992-06-10 Siemens Aktiengesellschaft Geschaltete Stromquelle
DE3786614D1 (de) * 1986-08-18 1993-08-26 Canon Kk Anzeigevorrichtung.
US4752699A (en) * 1986-12-19 1988-06-21 International Business Machines Corp. On chip multiple voltage generation using a charge pump and plural feedback sense circuits
JPH01134497A (en) * 1987-11-20 1989-05-26 Semiconductor Energy Lab Co Ltd Power supply circuit for liquid crystal display device
JPH01259751A (en) * 1988-04-07 1989-10-17 Toshiba Corp Step-up circuit
US4888738A (en) * 1988-06-29 1989-12-19 Seeq Technology Current-regulated, voltage-regulated erase circuit for EEPROM memory
US5844842A (en) * 1989-02-06 1998-12-01 Hitachi, Ltd. Nonvolatile semiconductor memory device
WO1991018394A1 (en) * 1990-05-17 1991-11-28 International Business Machines Corporation Read/write/restore circuit for memory arrays
JP3000633B2 (ja) * 1990-07-18 2000-01-17 セイコーエプソン株式会社 電子機器
US5412309A (en) * 1993-02-22 1995-05-02 National Semiconductor Corporation Current amplifiers
WO1994028629A1 (en) * 1993-05-28 1994-12-08 Macronix International Co., Ltd. Negative voltage generator for flash eprom design
EP0646924B1 (de) * 1993-09-30 1999-12-01 SGS-THOMSON MICROELECTRONICS S.r.l. Spannungserhöhungsschaltung zur Erzeugung von positiven und negativen erhöhten Spannungen
JP2848235B2 (ja) * 1994-02-28 1999-01-20 日本電気株式会社 半導体記憶装置用電源回路
US6876582B2 (en) * 2002-05-24 2005-04-05 Hynix Semiconductor, Inc. Flash memory cell erase scheme using both source and channel regions
US7889523B2 (en) * 2007-10-10 2011-02-15 Freescale Semiconductor, Inc. Variable load, variable output charge-based voltage multipliers

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3676717A (en) * 1970-11-02 1972-07-11 Ncr Co Nonvolatile flip-flop memory cell
US3821627A (en) * 1971-07-26 1974-06-28 S Milovancevic D c voltage multipliers and polarity converters
CH553481A (fr) * 1972-06-27 1974-08-30 Battelle Memorial Institute Ensemble pour polariser le substrat d'un circuit integre.
US4016476A (en) * 1972-09-20 1977-04-05 Citizen Watch Co., Ltd. Booster circuits
GB1504867A (en) * 1974-06-05 1978-03-22 Rca Corp Voltage amplitude multiplying circuits
US3955353A (en) * 1974-07-10 1976-05-11 Optel Corporation Direct current power converters employing digital techniques used in electronic timekeeping apparatus
US3975671A (en) * 1975-02-24 1976-08-17 Intel Corporation Capacitive voltage converter employing CMOS switches
US4001664A (en) * 1975-03-03 1977-01-04 Seiko Instruments Incorporated D.c. potential multiplier
IT1073440B (it) * 1975-09-22 1985-04-17 Seiko Instr & Electronics Circuito elevatore di tensione realizzato in mos-fet
US4053821A (en) * 1976-01-26 1977-10-11 Fairchild Camera And Instrument Corporation Voltage multiplier circuit
JPS6113594B2 (de) * 1976-04-21 1986-04-14 Tokyo Shibaura Electric Co
JPS5367826A (en) * 1976-11-29 1978-06-16 Seiko Epson Corp Boosting circuit

Also Published As

Publication number Publication date
EP0027450A4 (de) 1982-01-08
WO1980001972A1 (en) 1980-09-18
JPS56500108A (de) 1981-02-05
EP0027450A1 (de) 1981-04-29
EP0027450B1 (de) 1984-09-12
US4405868A (en) 1983-09-20

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee