DE2805905A1 - Linear semiconductor temp. sensor - has sensing transistor shunted by voltage divider with tap coupled to base - Google Patents
Linear semiconductor temp. sensor - has sensing transistor shunted by voltage divider with tap coupled to baseInfo
- Publication number
- DE2805905A1 DE2805905A1 DE19782805905 DE2805905A DE2805905A1 DE 2805905 A1 DE2805905 A1 DE 2805905A1 DE 19782805905 DE19782805905 DE 19782805905 DE 2805905 A DE2805905 A DE 2805905A DE 2805905 A1 DE2805905 A1 DE 2805905A1
- Authority
- DE
- Germany
- Prior art keywords
- sensor
- base
- voltage divider
- transistor
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P5/00—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft
- G01P5/10—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft by measuring thermal variables
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
Abstract
Description
Linearer Halbleitertemperaturfuhler" Linear semiconductor temperature sensor "
Die Erfindung beinhaltet einen Halbleitertemperaturfühler, bei den die Spannung linear von der Temperatur abhängt. Die Nachteile bekannter Anordungen mit NTC- bzw. PTC-Widerständen werden dabei eliminiert.The invention includes a semiconductor temperature sensor in which the voltage depends linearly on the temperature. The disadvantages of known arrangements with NTC or PTC resistors are eliminated.
Diese Nachteile sind im wesentlichen: Logarithmische Keunlinie (nicht linear). Keine Alterungsbeständigkeit. Die Aufgabe bestand darin, diese Nachteile zu beseitigen, Lösung: Dies geschieht erfindungsgemäss dadurch, dass der Emitter-Collektor-Strecke eines als Tomperaturfühler dienenden Transistors ein ohmscher Spannungsteiler ( R 1, R 2) parallelgeschaltet ist, dessen Abgriff mit der Basis des Transistors verbunden ist, Es ist allgemein bekannt, dass die Basis-Emitterkennlinie eines Transistors einen negativen Temperaturkoeffizienten von etwa 2 m V t K aufweist. Dieser Parameter ist alterungsbeständig.These disadvantages are essentially: Logarithmic Keun line (not linear). No aging resistance. The task was to address these disadvantages to eliminate, solution: This is done according to the invention in that the emitter-collector path of a transistor serving as a temperature sensor an ohmic voltage divider ( R 1, R 2) is connected in parallel, the tap of which is connected to the base of the transistor It is well known that the base-emitter characteristic of a transistor has a negative temperature coefficient of about 2 m V t K. This parameter is resistant to aging.
Die neue Fuhlerschaltung besteht aus eine Silizium Planar Transistor und zwei ohnschen liderständen (wig 1). Die Spannung U wird durch die gleichung Gl. 1 beschrieben. The new sensor circuit consists of a silicon planar transistor and two ohnschen resistors (tig 1). The voltage U is given by the equation Eq. 1 described.
UBE ist die Basis-Emitter-Spannung des Transistors. Die temperaturabhängige Grösse # # der Spannung # folgt der Gleichung Gl. 2. UBE is the base-emitter voltage of the transistor. The temperature-dependent quantity # # of the voltage # follows the equation Eq. 2.
Aus der Gleichung Gl. 2 geht hervor, dass # # unmittelbar von der Aenderung der UBE und vom Verhältnis der beiden Widerstände R 1, R 2 abhängt.From the equation Eq. 2 shows that # # follows directly from the Change of UBE and the ratio of the two resistors R 1, R 2 depends.
Unter der Voraussetzung, dass der in die Fühlerschaltung eingespeiste Strom konstant ist, ergibt sich die lineare AbhSngigkeit der Spannung von der Kristalltemperatur des Transistors. (Fig.2) Die Verlust leistung im Kristall wird sehr niedrig gehalten, um eine mOgllehst geringe Temperaturdifferenz zwischen Kristall und Gehäuse zu erreichen, Eine gezielte Erhöhung der Kristalltemperatur durch Stromerhöhung ergibt auch eine Erhöhung der Gehäusetenperatur und dieses wiederum simuliert eine höhere Umgebungstemperatur, Bei ruhender Luft in der Umgebung des Gehäuses stellt sich ein Gleichgewichtszustand ein. Bei bewegter Luft (Wind) wird über das Transistor-Gehäuse mehr farneenergie abgeführt, Das hat eine Erniedrigung der Kristalltemperatur zur Folge und somit eine Spannungsänderung.Provided that the fed into the sensor circuit If the current is constant, there is a linear dependence of the voltage on the crystal temperature of the transistor. (Fig. 2) The power loss in the crystal is kept very low, in order to achieve the lowest possible temperature difference between crystal and housing, A targeted increase in the crystal temperature by increasing the current also results in a Increase in the housing temperature and this in turn simulates a higher ambient temperature, When the air is still in the vicinity of the housing, a state of equilibrium is established a. With moving air (wind), more farne energy is generated through the transistor housing dissipated, this has a lowering of the crystal temperature and thus a voltage change.
Ein so betriebener Fühler ist im Stande, Luftbewegungen zuletzlich zu registrieren. Dieser Effekt wird beim Aussnfühler einer witterungsgeführten Vorlauftemperaturregelung in der Heizungstechnik ausgenutzt, um den Windeinfluss zu erfassen.A sensor operated in this way is capable of permitting air movements to register. With the outside sensor, this effect becomes a weather-compensated flow temperature control used in heating technology to record the influence of wind.
Ein Anwendungsbeispiel zeigt Fig. 3 Fühler A ist der Witterungsfühler, FUhler V ist der Vorlauftemperaturfühler. Mit dem folgenden Summierverstärker kann der Einfluss beider Fühler eingestellt werden (Heizkurve).An application example is shown in Fig. 3 Sensor A is the outside sensor, SENSOR V is the flow temperature sensor. With the following summing amplifier you can the influence of both sensors can be set (heating curve).
Vergleichen mit dem derzeitgigen Stand der Technik, wo überwiegend NTC- bzw. PTC-Widerstände verwendet werden, bietet dieser Halbleitertemperaturfühler einige wesentliche Vorteile: 1. Die TemperaturabhEngigkeit ist streng linear 2. Die Grösse der temperaturabhängigen Spannung kann auf sehr einfache Art verändert werden.Compare with the current state of the art where predominantly This semiconductor temperature sensor offers NTC or PTC resistors some essential advantages: 1. The temperature dependence is strictly linear 2. The size of the temperature-dependent voltage can be changed in a very simple way will.
3, Die Messung eines Windeinflusses ist ohne Mehraufwand möglich. 3, The measurement of a wind influence is possible without additional effort.
4. Die Alterungsbeständigkeit ist sehr gut. 4. The aging resistance is very good.
LeerseiteBlank page
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19782805905 DE2805905A1 (en) | 1978-02-13 | 1978-02-13 | Linear semiconductor temp. sensor - has sensing transistor shunted by voltage divider with tap coupled to base |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19782805905 DE2805905A1 (en) | 1978-02-13 | 1978-02-13 | Linear semiconductor temp. sensor - has sensing transistor shunted by voltage divider with tap coupled to base |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2805905A1 true DE2805905A1 (en) | 1979-08-16 |
Family
ID=6031767
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19782805905 Withdrawn DE2805905A1 (en) | 1978-02-13 | 1978-02-13 | Linear semiconductor temp. sensor - has sensing transistor shunted by voltage divider with tap coupled to base |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE2805905A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3048096A1 (en) * | 1979-12-19 | 1981-09-24 | Eluw Electronic AB, 95128 Luleå | DEVICE FOR MEASURING AND / OR MONITORING THE FLOW RATE OF A FLOWING MEDIUM |
DE3232336A1 (en) * | 1981-09-01 | 1983-03-10 | Kabushiki Kaisha Daini Seikosha, Tokyo | THERMOELECTRIC SEMICONDUCTOR DEVICE |
US4449244A (en) * | 1981-03-05 | 1984-05-15 | Bbc Brown, Boveri & Company Limited | Data transmission network employing optical wave guide |
DE3408739A1 (en) * | 1983-03-10 | 1984-09-13 | Dwyer Instruments Inc., Michigan City, Ind. | ANEMOMETER |
-
1978
- 1978-02-13 DE DE19782805905 patent/DE2805905A1/en not_active Withdrawn
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3048096A1 (en) * | 1979-12-19 | 1981-09-24 | Eluw Electronic AB, 95128 Luleå | DEVICE FOR MEASURING AND / OR MONITORING THE FLOW RATE OF A FLOWING MEDIUM |
US4449244A (en) * | 1981-03-05 | 1984-05-15 | Bbc Brown, Boveri & Company Limited | Data transmission network employing optical wave guide |
DE3232336A1 (en) * | 1981-09-01 | 1983-03-10 | Kabushiki Kaisha Daini Seikosha, Tokyo | THERMOELECTRIC SEMICONDUCTOR DEVICE |
DE3408739A1 (en) * | 1983-03-10 | 1984-09-13 | Dwyer Instruments Inc., Michigan City, Ind. | ANEMOMETER |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8139 | Disposal/non-payment of the annual fee |