DE2652032A1 - Einzelwandmagnetdomaenen-massenspeicher - Google Patents
Einzelwandmagnetdomaenen-massenspeicherInfo
- Publication number
- DE2652032A1 DE2652032A1 DE19762652032 DE2652032A DE2652032A1 DE 2652032 A1 DE2652032 A1 DE 2652032A1 DE 19762652032 DE19762652032 DE 19762652032 DE 2652032 A DE2652032 A DE 2652032A DE 2652032 A1 DE2652032 A1 DE 2652032A1
- Authority
- DE
- Germany
- Prior art keywords
- magnetic
- layer
- domain
- ion
- areas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005381 magnetic domain Effects 0.000 title claims description 69
- 238000003860 storage Methods 0.000 title claims description 50
- 230000005540 biological transmission Effects 0.000 claims description 15
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 14
- 238000005468 ion implantation Methods 0.000 claims description 12
- 239000000696 magnetic material Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 3
- 239000002223 garnet Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 241000692870 Inachis io Species 0.000 claims 1
- 230000005055 memory storage Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 19
- 239000010931 gold Substances 0.000 description 12
- 229910052737 gold Inorganic materials 0.000 description 11
- 230000006870 function Effects 0.000 description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 230000004044 response Effects 0.000 description 9
- 238000007747 plating Methods 0.000 description 7
- 230000006911 nucleation Effects 0.000 description 6
- 238000010899 nucleation Methods 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 230000006378 damage Effects 0.000 description 4
- 238000005272 metallurgy Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000008520 organization Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 108010076504 Protein Sorting Signals Proteins 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002343 gold Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000690623 Doras Species 0.000 description 1
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- 235000015076 Shorea robusta Nutrition 0.000 description 1
- 244000166071 Shorea robusta Species 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 210000002837 heart atrium Anatomy 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 239000003027 oil sand Substances 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0875—Organisation of a plurality of magnetic shift registers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0875—Organisation of a plurality of magnetic shift registers
- G11C19/0883—Means for switching magnetic domains from one path into another path, i.e. transfer switches, swap gates or decoders
Landscapes
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US64597575A | 1975-12-31 | 1975-12-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2652032A1 true DE2652032A1 (de) | 1977-07-14 |
Family
ID=24591228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762652032 Withdrawn DE2652032A1 (de) | 1975-12-31 | 1976-11-15 | Einzelwandmagnetdomaenen-massenspeicher |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4164029A (OSRAM) |
| JP (1) | JPS5283140A (OSRAM) |
| DE (1) | DE2652032A1 (OSRAM) |
| FR (1) | FR2337400A1 (OSRAM) |
| GB (1) | GB1527005A (OSRAM) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3217533A1 (de) * | 1981-05-11 | 1982-12-09 | Hitachi, Ltd., Tokyo | Magnetblasenspeicher-bauelement |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55153189A (en) * | 1979-05-17 | 1980-11-28 | Fujitsu Ltd | Manufacture of magnetic bubble unit |
| US4308592A (en) * | 1979-06-29 | 1981-12-29 | International Business Machines Corporation | Patterned kill of magnetoresistive layer in bubble domain chip |
| US4249249A (en) * | 1979-12-03 | 1981-02-03 | Bell Telephone Laboratories, Incorporated | Ion-implanted bubble memory |
| JPS5680876A (en) * | 1979-12-03 | 1981-07-02 | Fujitsu Ltd | Magnetic bubble memory chip |
| US4263662A (en) * | 1979-12-28 | 1981-04-21 | International Business Machines Corporation | Guard rail for contiguous element bubble chips |
| FR2480983A1 (fr) * | 1980-04-18 | 1981-10-23 | Commissariat Energie Atomique | Memoire a bulles magnetiques |
| JPS57170510A (en) * | 1981-04-15 | 1982-10-20 | Hitachi Ltd | Method of ion implantation |
| US4423489A (en) * | 1981-05-14 | 1983-12-27 | Rockwell International Corporation | Replicator for ion-implanted bubble domain devices using stretching action of charged wall |
| JPS5896705A (ja) * | 1981-12-04 | 1983-06-08 | Hitachi Ltd | 磁気バブルメモリ素子 |
| US4453217A (en) * | 1982-01-04 | 1984-06-05 | Bell Telephone Laboratories, Incorporated | Directory lookup method and apparatus |
| CA1197924A (en) * | 1982-06-23 | 1985-12-10 | Yoshio Satoh | Magnetic bubble memory device |
| JPS63146691A (ja) * | 1986-12-10 | 1988-06-18 | Matsushita Electric Ind Co Ltd | 動電型スピ−カ |
| JPH02172091A (ja) * | 1988-12-23 | 1990-07-03 | Hitachi Ltd | 磁気バブルメモリ素子 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3618054A (en) * | 1969-11-10 | 1971-11-02 | Bell Telephone Labor Inc | Magnetic domain storage organization |
| US3691540A (en) * | 1970-10-06 | 1972-09-12 | Ibm | Integrated magneto-resistive sensing of bubble domains |
| US3701125A (en) * | 1970-12-31 | 1972-10-24 | Ibm | Self-contained magnetic bubble domain memory chip |
| US3828329A (en) * | 1972-07-24 | 1974-08-06 | Bell Telephone Labor Inc | Single wall domain propagation arrangement |
| JPS5620683B2 (OSRAM) * | 1972-12-27 | 1981-05-15 | ||
| JPS5054252A (OSRAM) * | 1973-09-10 | 1975-05-13 | ||
| JPS5093083A (OSRAM) * | 1973-12-17 | 1975-07-24 | ||
| US4040019A (en) * | 1974-08-23 | 1977-08-02 | Texas Instruments Incorporated | Ion implanted magnetic bubble memory device having major and minor rows |
| US3967002A (en) * | 1974-12-31 | 1976-06-29 | International Business Machines Corporation | Method for making high density magnetic bubble domain system |
-
1976
- 1976-11-03 GB GB45669/76A patent/GB1527005A/en not_active Expired
- 1976-11-15 DE DE19762652032 patent/DE2652032A1/de not_active Withdrawn
- 1976-11-29 FR FR7636410A patent/FR2337400A1/fr active Granted
- 1976-12-10 JP JP14793376A patent/JPS5283140A/ja active Granted
-
1977
- 1977-10-05 US US05/839,720 patent/US4164029A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3217533A1 (de) * | 1981-05-11 | 1982-12-09 | Hitachi, Ltd., Tokyo | Magnetblasenspeicher-bauelement |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2337400B1 (OSRAM) | 1980-10-24 |
| FR2337400A1 (fr) | 1977-07-29 |
| JPS5652392B2 (OSRAM) | 1981-12-11 |
| US4164029A (en) | 1979-08-07 |
| JPS5283140A (en) | 1977-07-11 |
| GB1527005A (en) | 1978-10-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8139 | Disposal/non-payment of the annual fee |