DE2640641C3 - - Google Patents
Info
- Publication number
- DE2640641C3 DE2640641C3 DE19762640641 DE2640641A DE2640641C3 DE 2640641 C3 DE2640641 C3 DE 2640641C3 DE 19762640641 DE19762640641 DE 19762640641 DE 2640641 A DE2640641 A DE 2640641A DE 2640641 C3 DE2640641 C3 DE 2640641C3
- Authority
- DE
- Germany
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19762640641 DE2640641B2 (de) | 1976-09-09 | 1976-09-09 | Verfahren zum Einstellen einer stabilen Schmelzzone beim tiegelf reien Zonenschmelzen eines Halbleiterkristallstabes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19762640641 DE2640641B2 (de) | 1976-09-09 | 1976-09-09 | Verfahren zum Einstellen einer stabilen Schmelzzone beim tiegelf reien Zonenschmelzen eines Halbleiterkristallstabes |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2640641A1 DE2640641A1 (de) | 1978-03-16 |
| DE2640641B2 DE2640641B2 (de) | 1978-06-29 |
| DE2640641C3 true DE2640641C3 (US07582779-20090901-C00044.png) | 1982-12-02 |
Family
ID=5987552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762640641 Granted DE2640641B2 (de) | 1976-09-09 | 1976-09-09 | Verfahren zum Einstellen einer stabilen Schmelzzone beim tiegelf reien Zonenschmelzen eines Halbleiterkristallstabes |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE2640641B2 (US07582779-20090901-C00044.png) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2319700C3 (de) * | 1973-04-18 | 1980-11-27 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Beeinflussung des radialen Widerstandsverlaufs in einem Halbleitereinkristallstab beim tiegellosen Zonenschmelzen und Vorrichtungen zur Durchführung des Verfahrens |
-
1976
- 1976-09-09 DE DE19762640641 patent/DE2640641B2/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2640641B2 (de) | 1978-06-29 |
| DE2640641A1 (de) | 1978-03-16 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OAP | Request for examination filed | ||
| OD | Request for examination | ||
| C3 | Grant after two publication steps (3rd publication) | ||
| AG | Has addition no. |
Ref country code: DE Ref document number: 2808401 Format of ref document f/p: P |
|
| AG | Has addition no. |
Ref country code: DE Ref document number: 2808401 Format of ref document f/p: P |
|
| 8339 | Ceased/non-payment of the annual fee |