DE2544438A1 - Integrierte ueberspannungs-schutzschaltung - Google Patents

Integrierte ueberspannungs-schutzschaltung

Info

Publication number
DE2544438A1
DE2544438A1 DE19752544438 DE2544438A DE2544438A1 DE 2544438 A1 DE2544438 A1 DE 2544438A1 DE 19752544438 DE19752544438 DE 19752544438 DE 2544438 A DE2544438 A DE 2544438A DE 2544438 A1 DE2544438 A1 DE 2544438A1
Authority
DE
Germany
Prior art keywords
diode
gate
substrate
protective element
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19752544438
Other languages
German (de)
English (en)
Inventor
Claude L Bertin
Francisco H De La Moneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2544438A1 publication Critical patent/DE2544438A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/125—Shapes of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H10P30/212—Through-implantation

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Protection Of Static Devices (AREA)
DE19752544438 1974-10-22 1975-10-04 Integrierte ueberspannungs-schutzschaltung Withdrawn DE2544438A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US51692974A 1974-10-22 1974-10-22

Publications (1)

Publication Number Publication Date
DE2544438A1 true DE2544438A1 (de) 1976-04-29

Family

ID=24057645

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752544438 Withdrawn DE2544438A1 (de) 1974-10-22 1975-10-04 Integrierte ueberspannungs-schutzschaltung

Country Status (6)

Country Link
US (1) US4139935A (https=)
JP (2) JPS5162680A (https=)
DE (1) DE2544438A1 (https=)
FR (1) FR2289051A1 (https=)
GB (1) GB1524864A (https=)
IT (1) IT1041940B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4282556A (en) * 1979-05-21 1981-08-04 Rca Corporation Input protection device for insulated gate field effect transistor

Families Citing this family (32)

* Cited by examiner, † Cited by third party
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US4282648A (en) * 1980-03-24 1981-08-11 Intel Corporation CMOS process
JPS5715459A (en) * 1980-07-01 1982-01-26 Fujitsu Ltd Semiconductor integrated circuit
NL8100347A (nl) * 1981-01-26 1982-08-16 Philips Nv Halfgeleiderinrichting met een beveiligingsinrichting.
US4602267A (en) * 1981-02-17 1986-07-22 Fujitsu Limited Protection element for semiconductor device
EP0102696B1 (en) * 1982-06-30 1989-09-13 Kabushiki Kaisha Toshiba Dynamic semiconductor memory and manufacturing method thereof
DE3408285A1 (de) * 1984-03-07 1985-09-19 Telefunken electronic GmbH, 7100 Heilbronn Schutzanordnung fuer einen feldeffekttransistor
WO1987002511A1 (en) * 1985-10-15 1987-04-23 American Telephone & Telegraph Company Protection of igfet integrated circuits from electrostatic discharge
US5166089A (en) * 1986-09-30 1992-11-24 Texas Instruments Incorporated Method of making electrostatic discharge protection for semiconductor input devices
JPS63110078A (ja) * 1986-10-27 1988-05-14 Tsutomu Miwa 下垂式エヤダムスカ−ト
USRE37477E1 (en) * 1987-11-06 2001-12-18 Sgs-Thomson Microelectronics, Inc. Integrated circuit protected against electrostatic discharges, with variable protection threshold
FR2623018B1 (fr) * 1987-11-06 1990-02-09 Thomson Semiconducteurs Circuit integre protege contre les decharges electrostatiques avec seuil de protection variable
US4855620A (en) * 1987-11-18 1989-08-08 Texas Instruments Incorporated Output buffer with improved ESD protection
JP3199808B2 (ja) * 1991-05-14 2001-08-20 セイコーインスツルメンツ株式会社 半導体集積回路装置
JPH05304154A (ja) * 1992-04-28 1993-11-16 Nec Corp 半導体装置
EP0656152A1 (en) * 1992-08-14 1995-06-07 International Business Machines Corporation Mos device having protection against electrostatic discharge
US5545910A (en) * 1994-04-13 1996-08-13 Winbond Electronics Corp. ESD proctection device
US5807791A (en) * 1995-02-22 1998-09-15 International Business Machines Corporation Methods for fabricating multichip semiconductor structures with consolidated circuitry and programmable ESD protection for input/output nodes
US5703747A (en) * 1995-02-22 1997-12-30 Voldman; Steven Howard Multichip semiconductor structures with interchip electrostatic discharge protection, and fabrication methods therefore
US5629544A (en) * 1995-04-25 1997-05-13 International Business Machines Corporation Semiconductor diode with silicide films and trench isolation
US5825079A (en) * 1997-01-23 1998-10-20 Luminous Intent, Inc. Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage
EP1071211B1 (en) 1999-07-21 2006-09-13 STMicroelectronics S.r.l. Threshold voltage reduction of transistor shaped like a diode
US6368514B1 (en) 1999-09-01 2002-04-09 Luminous Intent, Inc. Method and apparatus for batch processed capacitors using masking techniques
US6420757B1 (en) 1999-09-14 2002-07-16 Vram Technologies, Llc Semiconductor diodes having low forward conduction voltage drop, low reverse current leakage, and high avalanche energy capability
US6433370B1 (en) 2000-02-10 2002-08-13 Vram Technologies, Llc Method and apparatus for cylindrical semiconductor diodes
US6580150B1 (en) 2000-11-13 2003-06-17 Vram Technologies, Llc Vertical junction field effect semiconductor diodes
US6537921B2 (en) 2001-05-23 2003-03-25 Vram Technologies, Llc Vertical metal oxide silicon field effect semiconductor diodes
US6958275B2 (en) * 2003-03-11 2005-10-25 Integrated Discrete Devices, Llc MOSFET power transistors and methods
US9281748B2 (en) 2012-03-02 2016-03-08 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Operating a DC-DC converter
US9236347B2 (en) 2013-10-09 2016-01-12 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Operating and manufacturing a DC-DC converter
US9584112B2 (en) * 2013-12-30 2017-02-28 Maxlinear, Inc. Method and system for reliable bootstrapping switches
US9219422B1 (en) 2014-08-21 2015-12-22 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Operating a DC-DC converter including a coupled inductor formed of a magnetic core and a conductive sheet
US9618539B2 (en) 2015-05-28 2017-04-11 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Sensing current of a DC-DC converter

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3286189A (en) * 1964-01-20 1966-11-15 Ithaco High gain field-effect transistor-loaded amplifier
US3395290A (en) * 1965-10-08 1968-07-30 Gen Micro Electronics Inc Protective circuit for insulated gate metal oxide semiconductor fieldeffect device
US3403270A (en) * 1965-05-10 1968-09-24 Gen Micro Electronics Inc Overvoltage protective circuit for insulated gate field effect transistor
US3444397A (en) * 1966-07-21 1969-05-13 Hughes Aircraft Co Voltage adjustable breakdown diode employing metal oxide silicon field effect transistor
DE2123362A1 (de) * 1970-05-12 1971-12-02 Zentralen Instut Sa Elementi Schaltung zum elektrostatischen Schutz von MOS Schaltungen
DE2143029A1 (de) * 1970-09-18 1972-03-23 Rca Corp Halbleiterschaltungsbaustein
DE1639254B2 (de) * 1967-02-27 1972-03-30 Hitachi, Ltd., Tokio Feldeffekthalbleiteranordnung mit isoliertem gatter und einem schaltungselement zur verhinderung eines durchschlags sowie verfahren zu ihrer herstellung
US3746946A (en) * 1972-10-02 1973-07-17 Motorola Inc Insulated gate field-effect transistor input protection circuit
US3787717A (en) * 1971-12-09 1974-01-22 Ibm Over voltage protection circuit lateral bipolar transistor with gated collector junction
DE2349461A1 (de) * 1972-10-02 1974-04-18 Motorola Inc Schutzschaltung fuer halbleiterelemente
FR2485808A1 (fr) * 1980-06-30 1981-12-31 Mitsubishi Electric Corp Circuit de protection d'entree pour dispositif semi-conducteur

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USB421061I5 (https=) * 1964-12-24
GB1165575A (en) * 1966-01-03 1969-10-01 Texas Instruments Inc Semiconductor Device Stabilization.
GB1209271A (en) * 1967-02-27 1970-10-21 Hitachi Ltd Improvements in semiconductor devices
US3999212A (en) * 1967-03-03 1976-12-21 Hitachi, Ltd. Field effect semiconductor device having a protective diode
US3534235A (en) * 1967-04-17 1970-10-13 Hughes Aircraft Co Igfet with offset gate and biconductivity channel region
GB1244225A (en) * 1968-12-31 1971-08-25 Associated Semiconductor Mft Improvements in and relating to methods of manufacturing semiconductor devices
US3679492A (en) * 1970-03-23 1972-07-25 Ibm Process for making mosfet's
JPS555712B2 (https=) * 1971-12-17 1980-02-08
FR2209217B1 (https=) * 1972-11-10 1977-12-16 Lignes Telegraph Telephon
US3793088A (en) * 1972-11-15 1974-02-19 Bell Telephone Labor Inc Compatible pnp and npn devices in an integrated circuit
JPS49105492A (https=) * 1973-02-07 1974-10-05
JPS5619744B2 (https=) * 1974-10-01 1981-05-09

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3286189A (en) * 1964-01-20 1966-11-15 Ithaco High gain field-effect transistor-loaded amplifier
US3403270A (en) * 1965-05-10 1968-09-24 Gen Micro Electronics Inc Overvoltage protective circuit for insulated gate field effect transistor
US3395290A (en) * 1965-10-08 1968-07-30 Gen Micro Electronics Inc Protective circuit for insulated gate metal oxide semiconductor fieldeffect device
US3444397A (en) * 1966-07-21 1969-05-13 Hughes Aircraft Co Voltage adjustable breakdown diode employing metal oxide silicon field effect transistor
DE1639254B2 (de) * 1967-02-27 1972-03-30 Hitachi, Ltd., Tokio Feldeffekthalbleiteranordnung mit isoliertem gatter und einem schaltungselement zur verhinderung eines durchschlags sowie verfahren zu ihrer herstellung
DE2123362A1 (de) * 1970-05-12 1971-12-02 Zentralen Instut Sa Elementi Schaltung zum elektrostatischen Schutz von MOS Schaltungen
DE2143029A1 (de) * 1970-09-18 1972-03-23 Rca Corp Halbleiterschaltungsbaustein
US3787717A (en) * 1971-12-09 1974-01-22 Ibm Over voltage protection circuit lateral bipolar transistor with gated collector junction
US3746946A (en) * 1972-10-02 1973-07-17 Motorola Inc Insulated gate field-effect transistor input protection circuit
DE2349461A1 (de) * 1972-10-02 1974-04-18 Motorola Inc Schutzschaltung fuer halbleiterelemente
FR2485808A1 (fr) * 1980-06-30 1981-12-31 Mitsubishi Electric Corp Circuit de protection d'entree pour dispositif semi-conducteur

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Richard S.C. Cobbold, Theory and Applikations of Fiel Effekt Transistors" Wiley 1970, S. 265-271 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4282556A (en) * 1979-05-21 1981-08-04 Rca Corporation Input protection device for insulated gate field effect transistor

Also Published As

Publication number Publication date
JPS5162680A (https=) 1976-05-31
JPS56129373A (en) 1981-10-09
US4139935A (en) 1979-02-20
GB1524864A (en) 1978-09-13
FR2289051B1 (https=) 1978-04-07
FR2289051A1 (fr) 1976-05-21
IT1041940B (it) 1980-01-10

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Legal Events

Date Code Title Description
OD Request for examination
8125 Change of the main classification

Ipc: H01L 23/56

8139 Disposal/non-payment of the annual fee