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Halbleitervorrichtung und verfahren zu ihrer herstellung

Info

Publication number
DE2537330A1
DE2537330A1 DE19752537330 DE2537330A DE2537330A1 DE 2537330 A1 DE2537330 A1 DE 2537330A1 DE 19752537330 DE19752537330 DE 19752537330 DE 2537330 A DE2537330 A DE 2537330A DE 2537330 A1 DE2537330 A1 DE 2537330A1
Authority
DE
Grant status
Application
Patent type
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19752537330
Other languages
English (en)
Inventor
Takashi Yokoyama
Yasuo Miyadera
Nobuhiko Shito
Hiroshi Suzuki
Yoshiaki Wakashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/303Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups H01B3/38 or H01B3/302
    • H01B3/306Polyimides or polyesterimides
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/312Organic layers, e.g. photoresist
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3171Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31721Of polyimide
DE19752537330 1974-08-21 1975-08-21 Halbleitervorrichtung und verfahren zu ihrer herstellung Withdrawn DE2537330A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9501574A JPS5123082A (en) 1974-08-21 1974-08-21 Handotaisochino seizoho

Publications (1)

Publication Number Publication Date
DE2537330A1 true true DE2537330A1 (de) 1976-03-04

Family

ID=14126160

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752537330 Withdrawn DE2537330A1 (de) 1974-08-21 1975-08-21 Halbleitervorrichtung und verfahren zu ihrer herstellung

Country Status (5)

Country Link
US (1) US4064289A (de)
JP (1) JPS5123082A (de)
DE (1) DE2537330A1 (de)
FR (1) FR2282444B1 (de)
GB (1) GB1498096A (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4238528A (en) * 1978-06-26 1980-12-09 International Business Machines Corporation Polyimide coating process and material
JPH0315340B2 (de) * 1981-04-30 1991-02-28 Hitachi Seisakusho Kk
US4661604A (en) * 1981-06-16 1987-04-28 Trw, Inc. Monofunctional crosslinking imidophenols
US5506060A (en) * 1981-11-13 1996-04-09 The Boeing Company Method for making multidimensional ether or ester oligomers
US5610317A (en) 1985-09-05 1997-03-11 The Boeing Company Multiple chemically functional end cap monomers
US5969079A (en) 1985-09-05 1999-10-19 The Boeing Company Oligomers with multiple chemically functional end caps
US4547553A (en) * 1982-07-29 1985-10-15 The Boeing Company Polybutadiene modified polyester compositions
JPH0373574B2 (de) * 1983-01-25 1991-11-22 Showa Denko Kk
JPS60501113A (de) * 1983-04-22 1985-07-18
US4536559A (en) * 1983-06-17 1985-08-20 The Boeing Company Thermally stable polyimide polysulfone compositions for composite structures
US5210213A (en) 1983-06-17 1993-05-11 The Boeing Company Dimensional, crosslinkable oligomers
US4684714A (en) * 1983-09-27 1987-08-04 The Boeing Company Method for making polyimide oligomers
US5516876A (en) * 1983-09-27 1996-05-14 The Boeing Company Polyimide oligomers and blends
US4584364A (en) * 1984-02-06 1986-04-22 The Boeing Company Phenolic-capped imide sulfone resins
US5449950A (en) * 1984-04-16 1995-09-12 Canon Kabushiki Kaisha Photosensor with organic and inorganic insulation layers
US5705598A (en) 1985-04-23 1998-01-06 The Boeing Company Polyester sulfone oligomers and blends
US5618907A (en) 1985-04-23 1997-04-08 The Boeing Company Thallium catalyzed multidimensional ester oligomers
US4871475A (en) * 1985-10-07 1989-10-03 The Boeing Company Polysulfone and polyethersulfone oligomers
US5512676A (en) 1987-09-03 1996-04-30 The Boeing Company Extended amideimide hub for multidimensional oligomers
US5115089A (en) * 1987-09-17 1992-05-19 Hitachi Chemical Co., Ltd. Processes for preparation of polyimide-isoindroquinazolinedione and precursor thereof
US5817744A (en) 1988-03-14 1998-10-06 The Boeing Company Phenylethynyl capped imides
US5693741A (en) 1988-03-15 1997-12-02 The Boeing Company Liquid molding compounds
DE3816457A1 (de) * 1988-05-13 1989-11-23 Josowicz Mira Verfahren zur verkapselung von elektronischen bauelementen
JP3288146B2 (ja) * 1992-09-16 2002-06-04 日立化成工業株式会社 導電性接着フィルム、接着法、導電性接着フィルム付き支持部材及び半導体装置
US5667899A (en) * 1992-09-16 1997-09-16 Hitachi Chemical Co. Ltd. Electrically conductive bonding films
JP5966618B2 (ja) * 2012-05-28 2016-08-10 東京エレクトロン株式会社 成膜方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1195411B (de) * 1960-05-10 1965-06-24 Intermetall Halbleiterbauelement mit festhaftender Oberflaechenschutzschicht auf dem Halbleiterkoerper
GB1257071A (de) * 1969-01-22 1971-12-15
JPS525586Y1 (de) * 1969-03-28 1977-02-04
US3868351A (en) * 1970-12-02 1975-02-25 Gen Electric Solution process for the preparation of polyimdies from diamines and anhydrides

Also Published As

Publication number Publication date Type
US4064289A (en) 1977-12-20 grant
FR2282444B1 (de) 1980-03-28 grant
JPS5123082A (en) 1976-02-24 application
FR2282444A1 (fr) 1976-03-19 application
GB1498096A (en) 1978-01-18 application

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Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee