DE2525093A1 - Vorrichtung und verfahren zur ladungsregenerierung - Google Patents
Vorrichtung und verfahren zur ladungsregenerierungInfo
- Publication number
- DE2525093A1 DE2525093A1 DE19752525093 DE2525093A DE2525093A1 DE 2525093 A1 DE2525093 A1 DE 2525093A1 DE 19752525093 DE19752525093 DE 19752525093 DE 2525093 A DE2525093 A DE 2525093A DE 2525093 A1 DE2525093 A1 DE 2525093A1
- Authority
- DE
- Germany
- Prior art keywords
- charge
- potential
- electrode
- packet
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000008929 regeneration Effects 0.000 title claims description 7
- 238000011069 regeneration method Methods 0.000 title claims description 7
- 238000000034 method Methods 0.000 title description 5
- 238000005036 potential barrier Methods 0.000 claims description 38
- 238000003860 storage Methods 0.000 claims description 37
- 239000002800 charge carrier Substances 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000000969 carrier Substances 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 230000001939 inductive effect Effects 0.000 claims 1
- 239000002019 doping agent Substances 0.000 description 45
- 230000003321 amplification Effects 0.000 description 14
- 238000003199 nucleic acid amplification method Methods 0.000 description 14
- 239000000758 substrate Substances 0.000 description 12
- 230000000903 blocking effect Effects 0.000 description 6
- 230000003014 reinforcing effect Effects 0.000 description 5
- 239000000523 sample Substances 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 3
- 230000002787 reinforcement Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101100042630 Caenorhabditis elegans sin-3 gene Proteins 0.000 description 1
- AZFKQCNGMSSWDS-UHFFFAOYSA-N MCPA-thioethyl Chemical compound CCSC(=O)COC1=CC=C(Cl)C=C1C AZFKQCNGMSSWDS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/456—Structures for regeneration, refreshing or leakage compensation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
- G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/476,702 US3937985A (en) | 1974-06-05 | 1974-06-05 | Apparatus and method for regenerating charge |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2525093A1 true DE2525093A1 (de) | 1975-12-18 |
Family
ID=23892916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752525093 Pending DE2525093A1 (de) | 1974-06-05 | 1975-06-05 | Vorrichtung und verfahren zur ladungsregenerierung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3937985A (https=) |
| JP (1) | JPS516483A (https=) |
| DE (1) | DE2525093A1 (https=) |
| FR (1) | FR2274116A1 (https=) |
| IT (1) | IT1036170B (https=) |
| NL (1) | NL7506450A (https=) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2281629A1 (fr) * | 1974-08-10 | 1976-03-05 | Solartron Electronic Group | Circuit memoire analogique |
| US3980902A (en) * | 1975-06-30 | 1976-09-14 | Honeywell Information Systems, Inc. | Charge injectors for CCD registers |
| DE2541662A1 (de) * | 1975-09-18 | 1977-03-24 | Siemens Ag | Regenerierschaltung fuer ladungsverschiebeanordnungen |
| US4124862A (en) * | 1975-10-01 | 1978-11-07 | General Electric Company | Charge transfer filter |
| US4047051A (en) * | 1975-10-24 | 1977-09-06 | International Business Machines Corporation | Method and apparatus for replicating a charge packet |
| JPS52147941A (en) * | 1976-06-03 | 1977-12-08 | Toshiba Corp | Electric charge transfer type analog signal memory system |
| US4099197A (en) * | 1976-08-12 | 1978-07-04 | Northern Telecom Limited | Complementary input structure for charge coupled device |
| US4170041A (en) * | 1976-09-17 | 1979-10-02 | Trw Inc. | Logic gate utilizing charge transfer devices |
| US4099175A (en) * | 1976-10-29 | 1978-07-04 | International Business Machines Corporation | Charge-coupled device digital-to-analog converter |
| CA1105139A (en) * | 1976-12-08 | 1981-07-14 | Ronald E. Crochiere | Charge transfer device having linear differential charge-splitting input |
| DE2721039C2 (de) * | 1977-05-10 | 1986-10-23 | Siemens AG, 1000 Berlin und 8000 München | Digitale Ladungsverschiebeanordnung |
| US4140923A (en) * | 1977-11-25 | 1979-02-20 | Rca Corporation | Charge transfer output circuits |
| US4135104A (en) * | 1977-12-02 | 1979-01-16 | Trw, Inc. | Regenerator circuit |
| DE2836473A1 (de) * | 1978-08-21 | 1980-03-06 | Siemens Ag | Ccd-eingangsschaltung nach dem fill and spill-prinzip |
| DE2838037A1 (de) * | 1978-08-31 | 1980-04-10 | Siemens Ag | Monolithisch integrierte ladungsverschiebeanordnung |
| US4482909A (en) * | 1982-08-02 | 1984-11-13 | Xerox Corporation | Signal equalization in quadrilinear imaging CCD arrays |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU461729B2 (en) * | 1971-01-14 | 1975-06-05 | Rca Corporation | Charge coupled circuits |
| US3806772A (en) * | 1972-02-07 | 1974-04-23 | Fairchild Camera Instr Co | Charge coupled amplifier |
| US3777186A (en) * | 1972-07-03 | 1973-12-04 | Ibm | Charge transfer logic device |
| US3838438A (en) * | 1973-03-02 | 1974-09-24 | Bell Telephone Labor Inc | Detection, inversion, and regeneration in charge transfer apparatus |
| US3831041A (en) * | 1973-05-03 | 1974-08-20 | Bell Telephone Labor Inc | Compensating circuit for semiconductive apparatus |
-
1974
- 1974-06-05 US US05/476,702 patent/US3937985A/en not_active Expired - Lifetime
-
1975
- 1975-05-30 NL NL7506450A patent/NL7506450A/xx unknown
- 1975-06-04 IT IT68439/75A patent/IT1036170B/it active
- 1975-06-04 FR FR7517433A patent/FR2274116A1/fr active Granted
- 1975-06-05 DE DE19752525093 patent/DE2525093A1/de active Pending
- 1975-06-05 JP JP50067136A patent/JPS516483A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US3937985A (en) | 1976-02-10 |
| NL7506450A (nl) | 1975-12-09 |
| IT1036170B (it) | 1979-10-30 |
| FR2274116B1 (https=) | 1977-07-08 |
| JPS516483A (https=) | 1976-01-20 |
| FR2274116A1 (fr) | 1976-01-02 |
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