DE249127C - - Google Patents

Info

Publication number
DE249127C
DE249127C DENDAT249127D DE249127DA DE249127C DE 249127 C DE249127 C DE 249127C DE NDAT249127 D DENDAT249127 D DE NDAT249127D DE 249127D A DE249127D A DE 249127DA DE 249127 C DE249127 C DE 249127C
Authority
DE
Grant status
Grant
Patent type
Application number
DENDAT249127D

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L7/00Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements
    • G01L7/18Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements using liquid as the pressure-sensitive medium, e.g. liquid-column gauges
DENDAT249127D DE249127C (en)

Publications (1)

Publication Number Publication Date
DE249127C true DE249127C (en)

Family

ID=507779

Family Applications (1)

Application Number Title Priority Date Filing Date
DENDAT249127D DE249127C (en)

Country Status (1)

Country Link
DE (1) DE249127C (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2426930A (en) * 1942-12-19 1947-09-02 Bristol Company Motion-transmitting means
US5084412A (en) * 1989-10-02 1992-01-28 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device with a copper wiring layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2426930A (en) * 1942-12-19 1947-09-02 Bristol Company Motion-transmitting means
US5084412A (en) * 1989-10-02 1992-01-28 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device with a copper wiring layer