DE2453509A1 - A process for the treatment of a number of slices in a reactive gas stream, in particular for the production of semiconductor devices - Google Patents

A process for the treatment of a number of slices in a reactive gas stream, in particular for the production of semiconductor devices

Info

Publication number
DE2453509A1
DE2453509A1 DE19742453509 DE2453509A DE2453509A1 DE 2453509 A1 DE2453509 A1 DE 2453509A1 DE 19742453509 DE19742453509 DE 19742453509 DE 2453509 A DE2453509 A DE 2453509A DE 2453509 A1 DE2453509 A1 DE 2453509A1
Authority
DE
Grant status
Application
Patent type
Prior art keywords
slices
treatment
production
particular
number
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19742453509
Other languages
German (de)
Other versions
DE2453509C2 (en )
Inventor
Johannes Meuleman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16Feed and outlet means for the gases; Modifying the flow of the gases
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/14Feed and outlet means for the gases; Modifying the flow of the reactive gases
DE19742453509 1973-11-15 1974-11-12 Expired DE2453509C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7340669A FR2251370B1 (en) 1973-11-15 1973-11-15

Publications (2)

Publication Number Publication Date
DE2453509A1 true true DE2453509A1 (en) 1975-05-22
DE2453509C2 DE2453509C2 (en) 1983-02-17

Family

ID=9127789

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19742453509 Expired DE2453509C2 (en) 1973-11-15 1974-11-12

Country Status (4)

Country Link
JP (1) JPS5424817B2 (en)
DE (1) DE2453509C2 (en)
FR (1) FR2251370B1 (en)
GB (1) GB1491255A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3148620C2 (en) * 1980-05-16 1986-05-28 Advanced Crystal Sciences, Inc., San Jose, Calif., Us
DE3620223A1 (en) * 1985-07-15 1987-01-22 Mitsubishi Electric Corp Means for preparing a semiconductor device

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52112772U (en) * 1976-02-20 1977-08-26
JPS5716734B2 (en) * 1977-12-09 1982-04-07
JPS54150971A (en) * 1978-05-19 1979-11-27 Toshiba Corp Liquid-phase epitaxial growth method for semiconductor element
FR2463819A1 (en) * 1979-08-21 1981-02-27 Thomson Csf Low pressure, hot wall, chemical vapour deposition reactor - has quartz cylinder contg. substrate platelets mounted perpendicular to longitudinal axis
JPS5670830A (en) * 1979-11-10 1981-06-13 Toshiba Corp Vapor growth method
JPH0133372Y2 (en) * 1982-03-01 1989-10-11
JPH06818Y2 (en) * 1989-09-21 1994-01-05 九州日本電気株式会社 The substrate supporting device for the Cvd equipment
US5192371A (en) * 1991-05-21 1993-03-09 Asm Japan K.K. Substrate supporting apparatus for a CVD apparatus
JP2015145317A (en) * 2014-01-31 2015-08-13 ヤマハ株式会社 Device for producing carbon nanotube
JP2015160747A (en) * 2014-02-25 2015-09-07 ヤマハ株式会社 Carbon nano-tube production apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3553037A (en) * 1968-04-05 1971-01-05 Stewart Warner Corp Gas diffusion method for fabricating semiconductor devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4944517U (en) * 1972-07-21 1974-04-19

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3553037A (en) * 1968-04-05 1971-01-05 Stewart Warner Corp Gas diffusion method for fabricating semiconductor devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3148620C2 (en) * 1980-05-16 1986-05-28 Advanced Crystal Sciences, Inc., San Jose, Calif., Us
DE3620223A1 (en) * 1985-07-15 1987-01-22 Mitsubishi Electric Corp Means for preparing a semiconductor device
US4802842A (en) * 1985-07-15 1989-02-07 Mitsubishi Denki Kabushiki Kaisha Apparatus for manufacturing semiconductor device

Also Published As

Publication number Publication date Type
JPS5424817B2 (en) 1979-08-23 grant
FR2251370B1 (en) 1978-12-01 grant
DE2453509C2 (en) 1983-02-17 grant
FR2251370A1 (en) 1975-06-13 application
GB1491255A (en) 1977-11-09 application
JPS5081677A (en) 1975-07-02 application

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Legal Events

Date Code Title Description
OD Request for examination
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee