DE2436486A1 - Verfahren zur herstellung eines mit einem schutzband versehenen, integrierten mos-schaltungsbauteils - Google Patents

Verfahren zur herstellung eines mit einem schutzband versehenen, integrierten mos-schaltungsbauteils

Info

Publication number
DE2436486A1
DE2436486A1 DE2436486A DE2436486A DE2436486A1 DE 2436486 A1 DE2436486 A1 DE 2436486A1 DE 2436486 A DE2436486 A DE 2436486A DE 2436486 A DE2436486 A DE 2436486A DE 2436486 A1 DE2436486 A1 DE 2436486A1
Authority
DE
Germany
Prior art keywords
frame
shaped structure
layer
sections
lying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2436486A
Other languages
German (de)
English (en)
Inventor
Andrew Gordon Francis Dingwall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE2436486A1 publication Critical patent/DE2436486A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE2436486A 1973-08-06 1974-07-29 Verfahren zur herstellung eines mit einem schutzband versehenen, integrierten mos-schaltungsbauteils Pending DE2436486A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US385668A US3888706A (en) 1973-08-06 1973-08-06 Method of making a compact guard-banded mos integrated circuit device using framelike diffusion-masking structure

Publications (1)

Publication Number Publication Date
DE2436486A1 true DE2436486A1 (de) 1975-02-20

Family

ID=23522375

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2436486A Pending DE2436486A1 (de) 1973-08-06 1974-07-29 Verfahren zur herstellung eines mit einem schutzband versehenen, integrierten mos-schaltungsbauteils

Country Status (11)

Country Link
US (1) US3888706A (https=)
JP (1) JPS5223231B2 (https=)
BE (1) BE818546A (https=)
BR (1) BR7406237D0 (https=)
CA (1) CA1012657A (https=)
DE (1) DE2436486A1 (https=)
FR (1) FR2240527B1 (https=)
GB (1) GB1471355A (https=)
IT (1) IT1015393B (https=)
NL (1) NL7410215A (https=)
SE (1) SE393221B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2700873A1 (de) * 1976-01-12 1977-07-21 Hitachi Ltd Verfahren zur herstellung von komplementaeren isolierschicht-feldeffekttransistoren

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4135955A (en) * 1977-09-21 1979-01-23 Harris Corporation Process for fabricating high voltage cmos with self-aligned guard rings utilizing selective diffusion and local oxidation
US4950618A (en) * 1989-04-14 1990-08-21 Texas Instruments, Incorporated Masking scheme for silicon dioxide mesa formation
JP2920546B2 (ja) * 1989-12-06 1999-07-19 セイコーインスツルメンツ株式会社 同極ゲートｍｉｓトランジスタの製造方法
EP0505877A2 (en) * 1991-03-27 1992-09-30 Seiko Instruments Inc. Impurity doping method with adsorbed diffusion source
US5356664A (en) * 1992-09-15 1994-10-18 Minnesota Mining And Manufacturing Company Method of inhibiting algae growth on asphalt shingles
US7541247B2 (en) * 2007-07-16 2009-06-02 International Business Machines Corporation Guard ring structures for high voltage CMOS/low voltage CMOS technology using LDMOS (lateral double-diffused metal oxide semiconductor) device fabrication

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3475234A (en) * 1967-03-27 1969-10-28 Bell Telephone Labor Inc Method for making mis structures
US3576478A (en) * 1969-07-22 1971-04-27 Philco Ford Corp Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode
US3646665A (en) * 1970-05-22 1972-03-07 Gen Electric Complementary mis-fet devices and method of fabrication
US3730787A (en) * 1970-08-26 1973-05-01 Bell Telephone Labor Inc Method of fabricating semiconductor integrated circuits using deposited doped oxides as a source of dopant impurities
US3673471A (en) * 1970-10-08 1972-06-27 Fairchild Camera Instr Co Doped semiconductor electrodes for mos type devices
NL173110C (nl) * 1971-03-17 1983-12-01 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een uit ten minste twee deellagen van verschillend materiaal samengestelde maskeringslaag wordt aangebracht.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2700873A1 (de) * 1976-01-12 1977-07-21 Hitachi Ltd Verfahren zur herstellung von komplementaeren isolierschicht-feldeffekttransistoren

Also Published As

Publication number Publication date
NL7410215A (nl) 1975-02-10
SE393221B (sv) 1977-05-02
FR2240527B1 (https=) 1978-11-24
BR7406237D0 (pt) 1975-05-27
BE818546A (fr) 1974-12-02
SE7410035L (https=) 1975-02-07
GB1471355A (en) 1977-04-27
AU7192274A (en) 1976-02-05
FR2240527A1 (https=) 1975-03-07
CA1012657A (en) 1977-06-21
JPS5046082A (https=) 1975-04-24
JPS5223231B2 (https=) 1977-06-22
IT1015393B (it) 1977-05-10
US3888706A (en) 1975-06-10

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