DE2341374A1 - Verfahren zur herstellung eines halbleiterbauelements in mesastruktur - Google Patents

Verfahren zur herstellung eines halbleiterbauelements in mesastruktur

Info

Publication number
DE2341374A1
DE2341374A1 DE19732341374 DE2341374A DE2341374A1 DE 2341374 A1 DE2341374 A1 DE 2341374A1 DE 19732341374 DE19732341374 DE 19732341374 DE 2341374 A DE2341374 A DE 2341374A DE 2341374 A1 DE2341374 A1 DE 2341374A1
Authority
DE
Germany
Prior art keywords
mask
mesa
etchant
junction
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19732341374
Other languages
German (de)
English (en)
Inventor
Stephen Michael Henning
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE2341374A1 publication Critical patent/DE2341374A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
DE19732341374 1972-08-17 1973-08-16 Verfahren zur herstellung eines halbleiterbauelements in mesastruktur Pending DE2341374A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00281295A US3808058A (en) 1972-08-17 1972-08-17 Fabrication of mesa diode with channel guard

Publications (1)

Publication Number Publication Date
DE2341374A1 true DE2341374A1 (de) 1974-03-14

Family

ID=23076696

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19732341374 Pending DE2341374A1 (de) 1972-08-17 1973-08-16 Verfahren zur herstellung eines halbleiterbauelements in mesastruktur

Country Status (8)

Country Link
US (1) US3808058A (https=)
JP (1) JPS4960479A (https=)
BE (1) BE803528A (https=)
CA (1) CA967292A (https=)
DE (1) DE2341374A1 (https=)
FR (1) FR2196521A1 (https=)
IT (1) IT990232B (https=)
NL (1) NL7311147A (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2438256A1 (de) * 1974-08-08 1976-02-19 Siemens Ag Verfahren zum herstellen einer monolithischen halbleiterverbundanordnung
JPS5138983A (https=) * 1974-09-30 1976-03-31 Hitachi Ltd
US4046595A (en) * 1974-10-18 1977-09-06 Matsushita Electronics Corporation Method for forming semiconductor devices
US4044454A (en) * 1975-04-16 1977-08-30 Ibm Corporation Method for forming integrated circuit regions defined by recessed dielectric isolation
JPS51149784A (en) * 1975-06-17 1976-12-22 Matsushita Electric Ind Co Ltd Solid state light emission device
US4030943A (en) * 1976-05-21 1977-06-21 Hughes Aircraft Company Planar process for making high frequency ion implanted passivated semiconductor devices and microwave integrated circuits
US4066473A (en) * 1976-07-15 1978-01-03 Fairchild Camera And Instrument Corporation Method of fabricating high-gain transistors
US4149904A (en) * 1977-10-21 1979-04-17 Ncr Corporation Method for forming ion-implanted self-aligned gate structure by controlled ion scattering
JPS6011161Y2 (ja) * 1979-05-16 1985-04-13 三菱重工業株式会社 コンクリ−トパイルの杭頭部破砕処理装置
US4276098A (en) * 1980-03-31 1981-06-30 Bell Telephone Laboratories, Incorporated Batch processing of semiconductor devices
US5268310A (en) * 1992-11-25 1993-12-07 M/A-Com, Inc. Method for making a mesa type PIN diode
KR100631279B1 (ko) * 2004-12-31 2006-10-02 동부일렉트로닉스 주식회사 고전압용 트랜지스터의 제조 방법
WO2007142603A1 (en) * 2006-06-09 2007-12-13 Agency For Science, Technology And Research An integrated shadow mask and method of fabrication thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484313A (en) * 1965-03-25 1969-12-16 Hitachi Ltd Method of manufacturing semiconductor devices
JPS4826179B1 (https=) * 1968-09-30 1973-08-07
US3639975A (en) * 1969-07-30 1972-02-08 Gen Electric Glass encapsulated semiconductor device fabrication process
GB1332932A (en) * 1970-01-15 1973-10-10 Mullard Ltd Methods of manufacturing a semiconductor device
US3728179A (en) * 1970-05-20 1973-04-17 Radiation Inc Method of etching silicon crystals
US3675313A (en) * 1970-10-01 1972-07-11 Westinghouse Electric Corp Process for producing self aligned gate field effect transistor

Also Published As

Publication number Publication date
JPS4960479A (https=) 1974-06-12
NL7311147A (https=) 1974-02-19
CA967292A (en) 1975-05-06
IT990232B (it) 1975-06-20
FR2196521A1 (https=) 1974-03-15
BE803528A (fr) 1973-12-03
US3808058A (en) 1974-04-30

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