DE2314124C3 - Verfahren zur Herstellung eines Polymermusters unter Verwendung von Elektronenstrahl-empfindlichem Polymermaterial - Google Patents
Verfahren zur Herstellung eines Polymermusters unter Verwendung von Elektronenstrahl-empfindlichem PolymermaterialInfo
- Publication number
- DE2314124C3 DE2314124C3 DE2314124A DE2314124A DE2314124C3 DE 2314124 C3 DE2314124 C3 DE 2314124C3 DE 2314124 A DE2314124 A DE 2314124A DE 2314124 A DE2314124 A DE 2314124A DE 2314124 C3 DE2314124 C3 DE 2314124C3
- Authority
- DE
- Germany
- Prior art keywords
- polymer
- electron beam
- resist
- tert
- butyl methacrylate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229920000642 polymer Polymers 0.000 title claims description 61
- 238000010894 electron beam technology Methods 0.000 title claims description 35
- 238000000034 method Methods 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000002861 polymer material Substances 0.000 title claims 3
- 239000000463 material Substances 0.000 claims description 29
- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 claims description 15
- 239000002904 solvent Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 9
- 229920001577 copolymer Polymers 0.000 claims description 7
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 5
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims description 2
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 12
- 239000000758 substrate Substances 0.000 description 9
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 8
- 238000000354 decomposition reaction Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-M methacrylate group Chemical group C(C(=C)C)(=O)[O-] CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical compound CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- -1 alkyl methacrylates Chemical class 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000000921 elemental analysis Methods 0.000 description 2
- 150000002148 esters Chemical group 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- 102100037293 Atrial natriuretic peptide-converting enzyme Human genes 0.000 description 1
- 101710133555 Atrial natriuretic peptide-converting enzyme Proteins 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- 101100290713 Caenorhabditis elegans mef-2 gene Proteins 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 241001077898 Melanthera Species 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 235000013601 eggs Nutrition 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000002198 insoluble material Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229920001580 isotactic polymer Polymers 0.000 description 1
- 210000003734 kidney Anatomy 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 210000004072 lung Anatomy 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- MZRVEZGGRBJDDB-UHFFFAOYSA-N n-Butyllithium Substances [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 1
- LWFWUJCJKPUZLV-UHFFFAOYSA-N n-trimethylsilylacetamide Chemical compound CC(=O)N[Si](C)(C)C LWFWUJCJKPUZLV-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920005553 polystyrene-acrylate Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910052990 silicon hydride Inorganic materials 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000012258 stirred mixture Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010626 work up procedure Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/949—Energy beam treating radiation resist on semiconductor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- ing And Chemical Polishing (AREA)
- Polymerisation Methods In General (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23787572A | 1972-03-24 | 1972-03-24 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2314124A1 DE2314124A1 (de) | 1973-10-04 |
| DE2314124B2 DE2314124B2 (de) | 1980-11-13 |
| DE2314124C3 true DE2314124C3 (de) | 1981-06-25 |
Family
ID=22895609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2314124A Expired DE2314124C3 (de) | 1972-03-24 | 1973-03-21 | Verfahren zur Herstellung eines Polymermusters unter Verwendung von Elektronenstrahl-empfindlichem Polymermaterial |
Country Status (7)
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4113897A (en) * | 1973-01-29 | 1978-09-12 | Rca Corporation | Smooth groove formation method employing spin coating of negative replica of inscribed disc |
| US3893127A (en) * | 1973-09-27 | 1975-07-01 | Rca Corp | Electron beam recording media |
| US3934057A (en) * | 1973-12-19 | 1976-01-20 | International Business Machines Corporation | High sensitivity positive resist layers and mask formation process |
| US3996393A (en) * | 1974-03-25 | 1976-12-07 | International Business Machines Corporation | Positive polymeric electron beam resists of very great sensitivity |
| US3987215A (en) * | 1974-04-22 | 1976-10-19 | International Business Machines Corporation | Resist mask formation process |
| US4078098A (en) * | 1974-05-28 | 1978-03-07 | International Business Machines Corporation | High energy radiation exposed positive resist mask process |
| US3976524A (en) * | 1974-06-17 | 1976-08-24 | Ibm Corporation | Planarization of integrated circuit surfaces through selective photoresist masking |
| US4011351A (en) * | 1975-01-29 | 1977-03-08 | International Business Machines Corporation | Preparation of resist image with methacrylate polymers |
| JPS51147324A (en) * | 1975-06-13 | 1976-12-17 | Fujitsu Ltd | Solvent for electronic wire resist |
| JPS524834A (en) * | 1975-06-30 | 1977-01-14 | Agency Of Ind Science & Technol | Image formation method through electron beam and resisting agent compo sitions which are used for the methoi |
| JPS5271239A (en) * | 1975-12-10 | 1977-06-14 | Matsushita Electric Ind Co Ltd | Electron beam sensitive material |
| US4103064A (en) * | 1976-01-09 | 1978-07-25 | Dios, Inc. | Microdevice substrate and method for making micropattern devices |
| JPS5293332A (en) * | 1976-02-02 | 1977-08-05 | Agency Of Ind Science & Technol | Polymer materials for electronic irradiation resist |
| JPS5350681A (en) * | 1976-10-19 | 1978-05-09 | Matsushita Electric Ind Co Ltd | Solvent for electron beam resist |
| JPS5352593A (en) * | 1976-10-26 | 1978-05-13 | Agency Of Ind Science & Technol | Electron rays-sensitive polymer |
| EP0016679B1 (fr) * | 1979-03-09 | 1982-06-09 | Thomson-Csf | Substances de photomasquage, leur procédé de préparation, et masque obtenu |
| JPS5857734B2 (ja) * | 1979-05-15 | 1983-12-21 | 超エル・エス・アイ技術研究組合 | 皮膜形成方法法 |
| US4338392A (en) * | 1979-08-09 | 1982-07-06 | International Business Machines Corporation | Class of E-beam resists based on conducting organic charge transfer salts |
| US4312936A (en) * | 1979-08-09 | 1982-01-26 | International Business Machines Corporation | Class of E-beam resists based on conducting organic charge transfer salts |
| US4312935A (en) * | 1979-08-09 | 1982-01-26 | International Business Machines Corporation | Class of E-beam resists based on conducting organic charge transfer salts |
| JPS5639539A (en) * | 1979-09-07 | 1981-04-15 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Pattern forming method |
| US4415653A (en) * | 1981-05-07 | 1983-11-15 | Honeywell Inc. | Method of making sensitive positive electron beam resists |
| US4508812A (en) * | 1984-05-03 | 1985-04-02 | Hughes Aircraft Company | Method of applying poly(methacrylic anhydride resist to a semiconductor |
| JPS6221151A (ja) * | 1985-07-19 | 1987-01-29 | Matsushita Electric Ind Co Ltd | パタ−ン形成方法 |
| JPH0816784B2 (ja) * | 1989-09-27 | 1996-02-21 | 工業技術院物質工学工業技術研究所長 | 感可視光樹脂組成物 |
| US6632590B1 (en) | 2000-07-14 | 2003-10-14 | Taiwan Semiconductor Manufacturing Company | Enhance the process window of memory cell line/space dense pattern in sub-wavelength process |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3392051A (en) * | 1964-06-08 | 1968-07-09 | Ibm | Method for forming thin film electrical circuit elements by preferential nucleation techniques |
| US3436468A (en) * | 1965-05-28 | 1969-04-01 | Texas Instruments Inc | Plastic bodies having regions of altered chemical structure and method of making same |
| US3535137A (en) * | 1967-01-13 | 1970-10-20 | Ibm | Method of fabricating etch resistant masks |
| DE1614635A1 (de) * | 1967-10-23 | 1970-03-26 | Siemens Ag | Verfahren zum Herstellen von Fotolackmasken fuer Halbleiterzwecke |
| GB1237433A (en) * | 1968-06-06 | 1971-06-30 | Standard Telephones Cables Ltd | Improvements in or relating to photolithographic masks |
| US3696742A (en) * | 1969-10-06 | 1972-10-10 | Monsanto Res Corp | Method of making a stencil for screen-printing using a laser beam |
-
1972
- 1972-03-24 US US00237875A patent/US3779806A/en not_active Expired - Lifetime
-
1973
- 1973-01-31 GB GB474473A patent/GB1370403A/en not_active Expired
- 1973-02-08 CA CA163,468A patent/CA1010401A/en not_active Expired
- 1973-02-14 JP JP48017558A patent/JPS5218097B2/ja not_active Expired
- 1973-02-20 FR FR7306798A patent/FR2177766B1/fr not_active Expired
- 1973-03-08 IT IT21308/73A patent/IT981198B/it active
- 1973-03-21 DE DE2314124A patent/DE2314124C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5218097B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1977-05-19 |
| JPS4915372A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-02-09 |
| FR2177766B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1983-06-10 |
| GB1370403A (en) | 1974-10-16 |
| IT981198B (it) | 1974-10-10 |
| DE2314124A1 (de) | 1973-10-04 |
| US3779806A (en) | 1973-12-18 |
| FR2177766A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-11-09 |
| CA1010401A (en) | 1977-05-17 |
| DE2314124B2 (de) | 1980-11-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |