DE2220519C3 - Verfahren zum tiegelfreien Zonenschmelzen von Halbleiterstäben - Google Patents

Verfahren zum tiegelfreien Zonenschmelzen von Halbleiterstäben

Info

Publication number
DE2220519C3
DE2220519C3 DE2220519A DE2220519A DE2220519C3 DE 2220519 C3 DE2220519 C3 DE 2220519C3 DE 2220519 A DE2220519 A DE 2220519A DE 2220519 A DE2220519 A DE 2220519A DE 2220519 C3 DE2220519 C3 DE 2220519C3
Authority
DE
Germany
Prior art keywords
generator
frequency
control
semiconductor
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2220519A
Other languages
German (de)
English (en)
Other versions
DE2220519B2 (de
DE2220519A1 (de
Inventor
Wolfgang Dr. 8000 Muenchen Keller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE2220519A priority Critical patent/DE2220519C3/de
Priority to NL7216255A priority patent/NL7216255A/xx
Priority to US342457A priority patent/US3880599A/en
Priority to JP48034435A priority patent/JPS5910959B2/ja
Priority to DK212573A priority patent/DK142062C/da
Priority to BE130450A priority patent/BE798760A/xx
Publication of DE2220519A1 publication Critical patent/DE2220519A1/de
Publication of DE2220519B2 publication Critical patent/DE2220519B2/de
Application granted granted Critical
Publication of DE2220519C3 publication Critical patent/DE2220519C3/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • General Induction Heating (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE2220519A 1972-04-26 1972-04-26 Verfahren zum tiegelfreien Zonenschmelzen von Halbleiterstäben Expired DE2220519C3 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE2220519A DE2220519C3 (de) 1972-04-26 1972-04-26 Verfahren zum tiegelfreien Zonenschmelzen von Halbleiterstäben
NL7216255A NL7216255A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-04-26 1972-11-30
US342457A US3880599A (en) 1972-04-26 1973-03-19 Control of rod diameter responsive to a plurality of corrected parameters
JP48034435A JPS5910959B2 (ja) 1972-04-26 1973-03-26 三制御量により一定直径に制御する半導体材料の無るつぼ帯溶融方法
DK212573A DK142062C (da) 1972-04-26 1973-04-17 Fremgangsmaade og apparat til digelfri zonesmeltning af halvlederstave ved hjaelp af en varmespole
BE130450A BE798760A (fr) 1972-04-26 1973-04-26 Procede de reglage a un diametre constant lors d'une fusion par zones sans creuset avec trois grandeurs de reglage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2220519A DE2220519C3 (de) 1972-04-26 1972-04-26 Verfahren zum tiegelfreien Zonenschmelzen von Halbleiterstäben

Publications (3)

Publication Number Publication Date
DE2220519A1 DE2220519A1 (de) 1973-11-15
DE2220519B2 DE2220519B2 (de) 1981-02-26
DE2220519C3 true DE2220519C3 (de) 1982-03-11

Family

ID=5843357

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2220519A Expired DE2220519C3 (de) 1972-04-26 1972-04-26 Verfahren zum tiegelfreien Zonenschmelzen von Halbleiterstäben

Country Status (6)

Country Link
US (1) US3880599A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5910959B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE798760A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2220519C3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DK (1) DK142062C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL7216255A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4176002A (en) * 1974-08-21 1979-11-27 Agence Nationale De Valorisation De La Recherche (Anvar) Controlling the melt temperature during zone refining and Czochralski crystal growth by sensing the viscous torque of the melt zone during operation
DK142586B (da) * 1977-07-07 1980-11-24 Topsil As Apparat til zonesmeltning af en halvlederstav.
JPS58831B2 (ja) * 1978-09-27 1983-01-08 東洋製罐株式会社 高周波誘導加熱回路

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE594105A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1959-08-17
GB904100A (en) * 1959-09-11 1962-08-22 Siemens Ag A process for zone-by-zone melting of a rod of semi-conductor material using an induction coil as the heating means and an automatic arrangement for controlling the current through the coil
DE1209551B (de) * 1961-12-07 1966-01-27 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen eines stabfoermigen Halbleiterkoerpers miteiner Steuerung seines Durchmessers- bzw. Querschnittsverlaufs und Vorrichtung zur Durchfuehrung dieses Verfahrens
US3284172A (en) * 1964-10-13 1966-11-08 Monsanto Co Apparatus and process for preparing semiconductor rods
US3321299A (en) * 1964-10-13 1967-05-23 Monsanto Co Apparatus and process for preparing semiconductor rods
US3617392A (en) * 1968-10-29 1971-11-02 Semimetals Inc Power control for crystal growing
DE1913881B2 (de) * 1969-03-19 1970-10-22 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen

Also Published As

Publication number Publication date
JPS4922384A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-02-27
US3880599A (en) 1975-04-29
NL7216255A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-10-30
DE2220519B2 (de) 1981-02-26
BE798760A (fr) 1973-10-26
DK142062B (da) 1980-08-18
DK142062C (da) 1981-01-12
DE2220519A1 (de) 1973-11-15
JPS5910959B2 (ja) 1984-03-12

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Legal Events

Date Code Title Description
OD Request for examination
C3 Grant after two publication steps (3rd publication)
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee