DE2217907A1 - Verfahren zur Herstellung eines fotoleitfähigen Filmes - Google Patents

Verfahren zur Herstellung eines fotoleitfähigen Filmes

Info

Publication number
DE2217907A1
DE2217907A1 DE19722217907 DE2217907A DE2217907A1 DE 2217907 A1 DE2217907 A1 DE 2217907A1 DE 19722217907 DE19722217907 DE 19722217907 DE 2217907 A DE2217907 A DE 2217907A DE 2217907 A1 DE2217907 A1 DE 2217907A1
Authority
DE
Germany
Prior art keywords
film
heat treatment
deposited
conductive film
photoconductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19722217907
Other languages
German (de)
English (en)
Inventor
Tadaaki Koganei; Marayama Eiichi Kodaira; Inao Kiyohisa Hachioji; Hirai (Japan). P
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE2217907A1 publication Critical patent/DE2217907A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
DE19722217907 1971-04-14 1972-04-13 Verfahren zur Herstellung eines fotoleitfähigen Filmes Pending DE2217907A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2308671 1971-04-14

Publications (1)

Publication Number Publication Date
DE2217907A1 true DE2217907A1 (de) 1972-11-09

Family

ID=12100599

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19722217907 Pending DE2217907A1 (de) 1971-04-14 1972-04-13 Verfahren zur Herstellung eines fotoleitfähigen Filmes

Country Status (4)

Country Link
US (1) US3755002A (https=)
DE (1) DE2217907A1 (https=)
FR (1) FR2133648B1 (https=)
GB (1) GB1382865A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2411517A1 (de) * 1973-03-12 1974-09-26 Hitachi Ltd Verfahren zum herstellen einer lichtempfindlichen heterogendiode
DE2415466A1 (de) * 1973-03-30 1974-11-07 Matsushita Electric Ind Co Ltd Photokathode
DE2436990A1 (de) * 1974-08-01 1976-02-12 Bosch Gmbh Robert Fotoleitertarget fuer fernsehaufnahmeroehren mit sperrenden kontakten

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240809B2 (https=) * 1972-04-07 1977-10-14
US3985918A (en) * 1972-10-12 1976-10-12 Matsushita Electric Industrial Co., Ltd. Method for manufacturing a target for an image pickup tube
JPS5052927A (https=) * 1973-09-10 1975-05-10
JPS5419127B2 (https=) * 1974-06-21 1979-07-12
US4128844A (en) * 1974-08-01 1978-12-05 Robert Bosch Gmbh Camera tube target structure exhibiting greater-than-unity amplification
GB1528192A (en) * 1975-03-10 1978-10-11 Secr Defence Surface treatment of iii-v compound crystals
US3982260A (en) * 1975-08-01 1976-09-21 Mobil Tyco Solar Energy Corporation Light sensitive electronic devices
US3990095A (en) * 1975-09-15 1976-11-02 Rca Corporation Selenium rectifier having hexagonal polycrystalline selenium layer
JPS6424468A (en) * 1987-07-21 1989-01-26 Canon Kk Functional deposited film

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2844640A (en) * 1956-05-11 1958-07-22 Donald C Reynolds Cadmium sulfide barrier layer cell
US3095324A (en) * 1960-04-14 1963-06-25 Gen Electric Method for making electrically conducting films and article
US3496024A (en) * 1961-10-09 1970-02-17 Monsanto Co Photovoltaic cell with a graded energy gap
US3568306A (en) * 1965-09-25 1971-03-09 Matsushita Electric Industrial Co Ltd Method of making photovoltaic device by electroplating
US3531335A (en) * 1966-05-09 1970-09-29 Kewanee Oil Co Method of preparing films of controlled resistivity

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2411517A1 (de) * 1973-03-12 1974-09-26 Hitachi Ltd Verfahren zum herstellen einer lichtempfindlichen heterogendiode
DE2415466A1 (de) * 1973-03-30 1974-11-07 Matsushita Electric Ind Co Ltd Photokathode
DE2415466C2 (de) * 1973-03-30 1983-09-08 Matsushita Electric Industrial Co., Ltd., Kadoma, Osaka Ladungsspeicherplatte
DE2436990A1 (de) * 1974-08-01 1976-02-12 Bosch Gmbh Robert Fotoleitertarget fuer fernsehaufnahmeroehren mit sperrenden kontakten

Also Published As

Publication number Publication date
US3755002A (en) 1973-08-28
FR2133648B1 (https=) 1976-10-29
GB1382865A (en) 1975-02-05
FR2133648A1 (https=) 1972-12-01

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