DE2149325A1 - Semiconductor charge storage device - Google Patents

Semiconductor charge storage device

Info

Publication number
DE2149325A1
DE2149325A1 DE19712149325 DE2149325A DE2149325A1 DE 2149325 A1 DE2149325 A1 DE 2149325A1 DE 19712149325 DE19712149325 DE 19712149325 DE 2149325 A DE2149325 A DE 2149325A DE 2149325 A1 DE2149325 A1 DE 2149325A1
Authority
DE
Germany
Prior art keywords
storage device
charge storage
semiconductor charge
semiconductor
device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712149325
Other languages
German (de)
Inventor
Smith George Elwood
Tompsett Michael Francis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Western Electric Co Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US7805070A priority Critical
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE2149325A1 publication Critical patent/DE2149325A1/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/108Dynamic random access memory structures
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42396Gate electrodes for field effect devices for charge coupled devices
DE19712149325 1970-10-05 1971-10-02 Semiconductor charge storage device Pending DE2149325A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US7805070A true 1970-10-05 1970-10-05

Publications (1)

Publication Number Publication Date
DE2149325A1 true DE2149325A1 (en) 1972-04-13

Family

ID=22141614

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712149325 Pending DE2149325A1 (en) 1970-10-05 1971-10-02 Semiconductor charge storage device

Country Status (7)

Country Link
AU (1) AU432367B2 (en)
BE (1) BE773362A (en)
CH (1) CH537631A (en)
DE (1) DE2149325A1 (en)
FR (1) FR2110213A1 (en)
GB (1) GB1325099A (en)
NL (1) NL7113593A (en)

Also Published As

Publication number Publication date
GB1325099A (en) 1973-08-01
NL7113593A (en) 1972-04-07
AU3398871A (en) 1973-02-22
AU432367B2 (en) 1973-02-22
FR2110213A1 (en) 1972-06-02
CH537631A (en) 1973-05-31
BE773362A1 (en)
BE773362A (en) 1972-01-17

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