DE2128039A1 - Halbleiterbauelement und Verfahren zu seiner Herstellung - Google Patents
Halbleiterbauelement und Verfahren zu seiner HerstellungInfo
- Publication number
- DE2128039A1 DE2128039A1 DE19712128039 DE2128039A DE2128039A1 DE 2128039 A1 DE2128039 A1 DE 2128039A1 DE 19712128039 DE19712128039 DE 19712128039 DE 2128039 A DE2128039 A DE 2128039A DE 2128039 A1 DE2128039 A1 DE 2128039A1
- Authority
- DE
- Germany
- Prior art keywords
- alkali
- semiconductor component
- semiconductor
- silicon
- component according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 74
- 238000000034 method Methods 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000011521 glass Substances 0.000 claims description 52
- 230000001681 protective effect Effects 0.000 claims description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 38
- 229910052710 silicon Inorganic materials 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 38
- 239000010410 layer Substances 0.000 claims description 33
- 239000003513 alkali Substances 0.000 claims description 29
- 239000002245 particle Substances 0.000 claims description 28
- 239000003795 chemical substances by application Substances 0.000 claims description 27
- 230000007704 transition Effects 0.000 claims description 18
- 230000005012 migration Effects 0.000 claims description 17
- 238000013508 migration Methods 0.000 claims description 17
- 150000004706 metal oxides Chemical group 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 2
- 239000011241 protective layer Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 230000001133 acceleration Effects 0.000 claims 1
- 239000000919 ceramic Substances 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910001510 metal chloride Inorganic materials 0.000 claims 1
- 239000005368 silicate glass Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 description 14
- 239000000203 mixture Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 208000031872 Body Remains Diseases 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000011222 crystalline ceramic Substances 0.000 description 1
- 229910002106 crystalline ceramic Inorganic materials 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000010442 halite Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4439170A | 1970-06-08 | 1970-06-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2128039A1 true DE2128039A1 (de) | 1971-12-16 |
Family
ID=21932128
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712128039 Pending DE2128039A1 (de) | 1970-06-08 | 1971-06-05 | Halbleiterbauelement und Verfahren zu seiner Herstellung |
| DE19717121884 Expired DE7121884U (de) | 1970-06-08 | 1971-06-05 | Halbleiterbauelement |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19717121884 Expired DE7121884U (de) | 1970-06-08 | 1971-06-05 | Halbleiterbauelement |
Country Status (4)
| Country | Link |
|---|---|
| DE (2) | DE2128039A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2094112B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1343473A (enrdf_load_stackoverflow) |
| IE (1) | IE35247B1 (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2634568A1 (de) * | 1975-08-04 | 1977-02-17 | Gen Electric | Halbleiterelement mit einem polymeren schutzueberzug |
| DE2915631A1 (de) * | 1978-04-18 | 1979-10-31 | Westinghouse Electric Corp | In glas eingekapselte halbleiteranordnung und verfahren zu ihrer herstellung |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1303509B (enrdf_load_stackoverflow) * | 1959-09-22 | 1972-07-13 | Carman Laboratories Inc | |
| US3505571A (en) * | 1965-09-30 | 1970-04-07 | Gen Electric | Glass covered semiconductor device |
-
1971
- 1971-05-18 IE IE62771A patent/IE35247B1/xx unknown
- 1971-05-25 GB GB1688871A patent/GB1343473A/en not_active Expired
- 1971-06-05 DE DE19712128039 patent/DE2128039A1/de active Pending
- 1971-06-05 DE DE19717121884 patent/DE7121884U/de not_active Expired
- 1971-06-08 FR FR7120676A patent/FR2094112B1/fr not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2634568A1 (de) * | 1975-08-04 | 1977-02-17 | Gen Electric | Halbleiterelement mit einem polymeren schutzueberzug |
| DE2915631A1 (de) * | 1978-04-18 | 1979-10-31 | Westinghouse Electric Corp | In glas eingekapselte halbleiteranordnung und verfahren zu ihrer herstellung |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1343473A (en) | 1974-01-10 |
| FR2094112A1 (enrdf_load_stackoverflow) | 1972-02-04 |
| IE35247L (en) | 1971-12-08 |
| FR2094112B1 (enrdf_load_stackoverflow) | 1977-08-05 |
| DE7121884U (de) | 1972-04-27 |
| IE35247B1 (en) | 1975-12-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2517939C2 (de) | Verfahren zur Herstellung einer für Infrarotstrahlung empfindlichen Photodiode | |
| DE2808257B2 (de) | Halbleitervorrichtung und verfahren zu ihrer herstellung | |
| DE6606541U (de) | Halbleiteranordnung | |
| DE1282196B (de) | Halbleiterbauelement mit einer Schutzvorrichtung fuer seine pn-UEbergaenge | |
| DE2823904A1 (de) | Dichtungsglas | |
| DE1179277B (de) | Beschichtung elektrischer Schaltelemente mit Glas | |
| DE2723380A1 (de) | Glasierter gegenstand | |
| DE2023936A1 (de) | Halbleitereinrichtung und Verfahren zu seiner Herstellung | |
| DE2739762C2 (de) | Verfahren zur Passivierung von Halbleiterkörpern | |
| EP0185787B1 (de) | Plastikumhülltes Halbleiterbauelement | |
| DE2458734A1 (de) | Verfahren zur herstellung hochohmiger widerstaende in einer integrierten halbleiterschaltung | |
| DE3100979C2 (de) | Planares Halbeiterbauelement | |
| DE1496545A1 (de) | Glasgemenge,insbesondere als Material fuer Passivierungs- und Schutzschichten fuer Festkoerperbauelemente | |
| DE7119982U (de) | Halbleitervorrichtung | |
| DE2037524A1 (de) | Verfahren zur Herstellung eines in Glas gekapselten Halbleiterbauelements | |
| DE2128039A1 (de) | Halbleiterbauelement und Verfahren zu seiner Herstellung | |
| DE1802849B2 (de) | Verfahren zum herstellen einer monolithischen schaltung | |
| DE2835562A1 (de) | Material fuer einen glasartigen elektrischen widerstand und verfahren zu dessen herstellung | |
| DE3905444C2 (de) | Keramischer Kondensator und Verfahren zu dessen Herstellung | |
| DE2743641A1 (de) | Verfahren und vorrichtung zum herstellen von amorphen halbleitervorrichtungen | |
| DE2145956A1 (de) | Verfahren zum gleichzeitigen Eindiffundieren mehrerer Verunreinigungen in ein Halbleiter-Grundmaterial | |
| DE3224248A1 (de) | Glaspassivierte halbleiteranordnung und verfahren zu deren herstellung | |
| DE202025102181U1 (de) | Solarzelle | |
| DE2851479A1 (de) | Glasueberzogene halbleiteranordnung und deren herstellverfahren | |
| DE2123748C3 (de) | Verfahren zum Herstellen eines NPN-Silicium-Planar-Transistors |