DE2042240A1 - Feldeffekt-Halbleiterbauelement - Google Patents
Feldeffekt-HalbleiterbauelementInfo
- Publication number
- DE2042240A1 DE2042240A1 DE19702042240 DE2042240A DE2042240A1 DE 2042240 A1 DE2042240 A1 DE 2042240A1 DE 19702042240 DE19702042240 DE 19702042240 DE 2042240 A DE2042240 A DE 2042240A DE 2042240 A1 DE2042240 A1 DE 2042240A1
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- layer
- semiconductor
- substrate
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 36
- 230000005669 field effect Effects 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 7
- 238000011144 upstream manufacturing Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702042240 DE2042240A1 (de) | 1970-08-26 | 1970-08-26 | Feldeffekt-Halbleiterbauelement |
| CH1151371A CH529447A (de) | 1970-08-26 | 1971-08-05 | Feldeffekt-Halbleiterbauelement |
| CA120729A CA938382A (en) | 1970-08-26 | 1971-08-17 | Mis field effect transistor |
| LU63766D LU63766A1 (enrdf_load_stackoverflow) | 1970-08-26 | 1971-08-24 | |
| BE771755A BE771755A (fr) | 1970-08-26 | 1971-08-25 | Composant semi-conducteur a effet de champ |
| FR7130886A FR2103532B1 (enrdf_load_stackoverflow) | 1970-08-26 | 1971-08-25 | |
| NL7111768A NL7111768A (enrdf_load_stackoverflow) | 1970-08-26 | 1971-08-26 | |
| GB4020471A GB1351788A (en) | 1970-08-26 | 1971-08-26 | Semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702042240 DE2042240A1 (de) | 1970-08-26 | 1970-08-26 | Feldeffekt-Halbleiterbauelement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2042240A1 true DE2042240A1 (de) | 1972-03-02 |
Family
ID=5780729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702042240 Pending DE2042240A1 (de) | 1970-08-26 | 1970-08-26 | Feldeffekt-Halbleiterbauelement |
Country Status (8)
| Country | Link |
|---|---|
| BE (1) | BE771755A (enrdf_load_stackoverflow) |
| CA (1) | CA938382A (enrdf_load_stackoverflow) |
| CH (1) | CH529447A (enrdf_load_stackoverflow) |
| DE (1) | DE2042240A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2103532B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1351788A (enrdf_load_stackoverflow) |
| LU (1) | LU63766A1 (enrdf_load_stackoverflow) |
| NL (1) | NL7111768A (enrdf_load_stackoverflow) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1614696A1 (de) * | 1967-12-27 | 1970-07-02 | Siemens Ag | Verfahren zum Herstellen duenner,vorzugsweise aus Halbleitermaterial bestehender Schichten fuer elektrische Bauelemente |
| GB1251693A (enrdf_load_stackoverflow) * | 1968-02-29 | 1971-10-27 |
-
1970
- 1970-08-26 DE DE19702042240 patent/DE2042240A1/de active Pending
-
1971
- 1971-08-05 CH CH1151371A patent/CH529447A/de not_active IP Right Cessation
- 1971-08-17 CA CA120729A patent/CA938382A/en not_active Expired
- 1971-08-24 LU LU63766D patent/LU63766A1/xx unknown
- 1971-08-25 BE BE771755A patent/BE771755A/xx unknown
- 1971-08-25 FR FR7130886A patent/FR2103532B1/fr not_active Expired
- 1971-08-26 NL NL7111768A patent/NL7111768A/xx unknown
- 1971-08-26 GB GB4020471A patent/GB1351788A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1351788A (en) | 1974-05-01 |
| LU63766A1 (enrdf_load_stackoverflow) | 1972-01-05 |
| BE771755A (fr) | 1971-12-31 |
| FR2103532A1 (enrdf_load_stackoverflow) | 1972-04-14 |
| CH529447A (de) | 1972-10-15 |
| FR2103532B1 (enrdf_load_stackoverflow) | 1975-07-11 |
| CA938382A (en) | 1973-12-11 |
| NL7111768A (enrdf_load_stackoverflow) | 1972-02-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHW | Rejection |