DE20214521U1 - Production of a semiconductor component used in the production of substrate-less luminescent diodes comprises separating a semiconductor layer from a substrate by irradiating with a laser beam having a plateau-shaped spatial beam profile - Google Patents

Production of a semiconductor component used in the production of substrate-less luminescent diodes comprises separating a semiconductor layer from a substrate by irradiating with a laser beam having a plateau-shaped spatial beam profile

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Publication number
DE20214521U1
DE20214521U1 DE20214521U DE20214521U DE20214521U1 DE 20214521 U1 DE20214521 U1 DE 20214521U1 DE 20214521 U DE20214521 U DE 20214521U DE 20214521 U DE20214521 U DE 20214521U DE 20214521 U1 DE20214521 U1 DE 20214521U1
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Germany
Prior art keywords
semiconductor
substrate
component according
semiconductor layer
semiconductor component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE20214521U
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German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
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Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE20214521U priority Critical patent/DE20214521U1/en
Priority claimed from DE10203795.7A external-priority patent/DE10203795B4/en
Priority to DE10243757A priority patent/DE10243757A1/en
Priority to DE10303977A priority patent/DE10303977A1/en
Priority to DE10303978A priority patent/DE10303978A1/en
Publication of DE20214521U1 publication Critical patent/DE20214521U1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

Abstract

Production of a semiconductor component comprises separating a semiconductor layer (2) from a substrate (1) by irradiating with a laser beam having a plateau-shaped spatial beam profile. Preferred Features: The laser beam is produced an excimer laser containing a rare gas-halogen compound, especially XeF, XeBr, KrCl or KrF as laser-active medium. The laser beam has a rectangular or trapezoidal spatial beam profile. The laser beam has a wavelength of 200-400 nm.

Description

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßtThe description text was not recorded electronically

Claims (18)

1. Halbleiterbauelement mit einer Halbleiterschicht (2), die von einem Substrat (1) durch Bestrahlen mit einem Laserstrahl (6) getrennt wurde, dadurch gekennzeichnet, daß der Laserstrahl (6) ein plateauartiges räumliches Strahlpro­ fil (7) aufweist.1. A semiconductor device with a semiconductor layer ( 2 ) which has been separated from a substrate ( 1 ) by irradiation with a laser beam ( 6 ), characterized in that the laser beam ( 6 ) has a plateau-like spatial Strahlpro fil ( 7 ). 2. Halbleiterbauelement nach Anspruch 1, dadurch gekennzeichnet, daß der Excimer-Laser eine Edelgas-Halogen-Verbindung, insbeson­ dere XeF, Xeßr, XeCl, KrCl oder KrF als laseraktives Medium enthält.2. The semiconductor component according to claim 1, characterized in that the excimer laser is a noble gas-halogen compound, in particular XeF, Xeßr, XeCl, KrCl or KrF as laser-active medium contains. 3. Halbleiterbauelement nach Anspruch 2, dadurch gekennzeichnet, daß der Laserstrahl (6) ein plateauartiges räumliches Strahlpro­ fil (7) aufweist.3. A semiconductor device according to claim 2, characterized in that the laser beam ( 6 ) has a plateau-like spatial Strahlpro fil ( 7 ). 4. Halbleiterbauelement nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß der Laserstrahl (6) ein rechteckartiges oder trapezartiges räumliches Strahlprofil aufweist.4. Semiconductor component according to one of claims 1 to 3, characterized in that the laser beam ( 6 ) has a rectangular or trapezoidal spatial beam profile. 5. Halbleiterbauelement nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, daß die Wellenlänge des Laserstrahls (6) zwischen 200 nm und 400 nm liegt.5. Semiconductor component according to one of claims 1 to 4, characterized in that the wavelength of the laser beam ( 6 ) is between 200 nm and 400 nm. 6. Halbleiterbauelement nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß mehrere Einzelbereiche der Halbleiterschicht nacheinander bestrahlt werden, wobei die Einzelbereiche (8) derart flächenfüllend angeordnet sind, daß sich für einen überwiegenden Teil der bestrahlten Halbleiterschicht (2) zeitlich integriert eine räumlich annähernd konstante Intensitätsverteilung (10) ergibt.6. Semiconductor component according to one of claims 1 to 5, characterized in that a plurality of individual regions of the semiconductor layer are irradiated one after the other, the individual regions ( 8 ) being arranged such that they are spatially integrated for a major part of the irradiated semiconductor layer ( 2 ) results in approximately constant intensity distribution ( 10 ). 7. Halbleiterbauelement nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, daß der Laserstrahl (6) am Ort der Halbleiterschicht (2) eine Strahlfläche mit einer Längsabmessung (a) und einer Querab­ messung (b) aufweist, wobei die Längsabmessung (a) größer als die Querabmessung (b) ist, und die Halbleiterschicht (2) wäh­ rend der Bestrahlung entlang der Richtung der Querabmessung (b) relativ zu dem Laserstrahl (6) bewegt wird.7. Semiconductor component according to one of claims 1 to 6, characterized in that the laser beam ( 6 ) at the location of the semiconductor layer ( 2 ) has a beam surface with a longitudinal dimension (a) and a transverse dimension (b), the longitudinal dimension (a) is larger than the transverse dimension (b), and the semiconductor layer ( 2 ) is moved during the irradiation along the direction of the transverse dimension (b) relative to the laser beam ( 6 ). 8. Halbleiterbauelement nach einem der Ansprüche 1 bis 7, dadurch gekennzeichnet, daß das Substrat (1) für den Laserstrahl (6) zumindest teilweise durchlässig ist und die Halbleiterschicht (2) durch das Sub­ strat (1) hindurch bestrahlt wird.8. Semiconductor component according to one of claims 1 to 7, characterized in that the substrate ( 1 ) for the laser beam ( 6 ) is at least partially transparent and the semiconductor layer ( 2 ) through the substrate ( 1 ) is irradiated therethrough. 9. Halbleiterbauelement mit einer Halbleiterschicht (2), die von einem Substrat (1) durch Bestrahlen mit einem Laserstrahl (6) getrennt wurde, dadurch gekennzeichnet, daß vor der Trennung von dem Substrat (1) auf die von dem Substrat (1) abgewandte Seite der Halb­ leiterschicht (2) eine Metallisierung, die Gold und/oder Platin enthält, aufgebracht wird und die Halbleiterschicht (2) mit der von dem Substrat (1) abgewandten Seite auf einen Träger (4) gelötet wird.9. A semiconductor device with a semiconductor layer ( 2 ) which has been separated from a substrate ( 1 ) by irradiation with a laser beam ( 6 ), characterized in that prior to the separation from the substrate ( 1 ) on the substrate ( 1 ) facing away On the side of the semiconductor layer ( 2 ), a metallization containing gold and / or platinum is applied and the semiconductor layer ( 2 ) is soldered to a carrier ( 4 ) with the side facing away from the substrate ( 1 ). 10. Halbleiterbauelement nach Anspruch 9, dadurch gekennzeichnet, daß der Träger (4) Galliumarsenid, Germanium, Silizium, Molybdän, Kupfer, Eisen, Nickel und/oder Kobalt enthält.10. A semiconductor component according to claim 9, characterized in that the carrier ( 4 ) contains gallium arsenide, germanium, silicon, molybdenum, copper, iron, nickel and / or cobalt. 11. Halbleiterbauelement nach einem der Ansprüche 1 bis 10 dadurch gekennzeichnet, daß die Halbleiterschicht (2) mindestens einen Nitrid-Verbin­ dungshalbleiter enthält.11. Semiconductor component according to one of claims 1 to 10, characterized in that the semiconductor layer ( 2 ) contains at least one nitride compound semiconductor. 12. Halbleiterbauelement nach ein Anspruch 11, dadurch gekennzeichnet, daß der Nitrid-Verbindungshalbleiter eine Nitridverbindung von Elementen der dritten und/oder fünften Hauptgruppe ist.12. The semiconductor component according to claim 11, characterized in that the nitride compound semiconductor is a nitride compound from Elements of the third and / or fifth main group. 13. Halbleiterbauelement nach einem der Ansprüche 1 bis 12, dadurch gekennzeichnet, daß die Halbleiterschicht (2) eine Mehrzahl von Einzelschichten umfaßt.13. Semiconductor component according to one of claims 1 to 12, characterized in that the semiconductor layer ( 2 ) comprises a plurality of individual layers. 14. Halbleiterbauelement nach einem der Ansprüche 1 bis 13, dadurch gekennzeichnet, daß die Halbleiterschicht (2) bzw. mindestens eine der Einzel­ schichten GaN, AlGaN, InGaN, AlInGaN, AlN oder InN enthält.14. Semiconductor component according to one of claims 1 to 13, characterized in that the semiconductor layer ( 2 ) or at least one of the individual layers contains GaN, AlGaN, InGaN, AlInGaN, AlN or InN. 15. Halbleiterbauelement nach einem der Ansprüche 1 bis 14, dadurch gekennzeichnet, daß das Substrat (1) Silizium, Siliziumkarbid oder Aluminiumoxid, insbesondere Saphir, enthält.15. Semiconductor component according to one of claims 1 to 14, characterized in that the substrate ( 1 ) contains silicon, silicon carbide or aluminum oxide, in particular sapphire. 16. Halbleiterbauelement nach einem der Ansprüche 1 bis 15, dadurch gekennzeichnet, daß die Halbleiterschicht (2) eine Dicke aufweist, die kleiner oder gleich 50 µm ist.16. Semiconductor component according to one of claims 1 to 15, characterized in that the semiconductor layer ( 2 ) has a thickness which is less than or equal to 50 microns. 17. Halbleiterbauelement nach einem der Ansprüche 1 bis 16, dadurch gekennzeichnet, daß das Halbleiterbauelement ein Dünnschichtbauelement ist.17. The semiconductor component according to one of claims 1 to 16, characterized in that the semiconductor component is a thin-film component. 18. Halbleiterbauelement nach einem der Ansprüche 1 bis 17, dadurch gekennzeichnet, daß das Halbleiterbauelement ein optoelektronisches Bauelement, insbesondere ein strahlungserzeugendes Bauelement wie eine Lumineszenzdiode ist.18. Semiconductor component according to one of claims 1 to 17, characterized in that the semiconductor component is an optoelectronic component, in particular a radiation-generating component such as one Luminescent diode is.
DE20214521U 2002-01-31 2002-01-31 Production of a semiconductor component used in the production of substrate-less luminescent diodes comprises separating a semiconductor layer from a substrate by irradiating with a laser beam having a plateau-shaped spatial beam profile Expired - Lifetime DE20214521U1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE20214521U DE20214521U1 (en) 2002-01-31 2002-01-31 Production of a semiconductor component used in the production of substrate-less luminescent diodes comprises separating a semiconductor layer from a substrate by irradiating with a laser beam having a plateau-shaped spatial beam profile
DE10243757A DE10243757A1 (en) 2002-01-31 2002-09-20 Semiconductor chip manufacturing method, e.g. for LED manufacture, by matching thermal expansion coefficient to carrier to radiation profile and pulse length of laser beam used to separate from substrate
DE10303977A DE10303977A1 (en) 2002-01-31 2003-01-31 Production of a semiconductor component comprises separating a semiconductor layer from a substrate by irradiating with laser impulses having a spatial beam profile having a low enough flank steepness
DE10303978A DE10303978A1 (en) 2002-01-31 2003-01-31 Semiconductor component used as a light emitting diode, especially an illuminating diode or laser diode, comprises a thin film semiconductor body arranged on a support containing germanium

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10203795.7A DE10203795B4 (en) 2002-01-31 2002-01-31 Method for manufacturing a semiconductor component
DE20214521U DE20214521U1 (en) 2002-01-31 2002-01-31 Production of a semiconductor component used in the production of substrate-less luminescent diodes comprises separating a semiconductor layer from a substrate by irradiating with a laser beam having a plateau-shaped spatial beam profile

Publications (1)

Publication Number Publication Date
DE20214521U1 true DE20214521U1 (en) 2003-08-07

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DE20214521U Expired - Lifetime DE20214521U1 (en) 2002-01-31 2002-01-31 Production of a semiconductor component used in the production of substrate-less luminescent diodes comprises separating a semiconductor layer from a substrate by irradiating with a laser beam having a plateau-shaped spatial beam profile

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005006821B4 (en) * 2004-02-20 2010-04-29 Epistar Corp. Light emission component with organic adhesive
US7964890B2 (en) 2005-09-30 2011-06-21 Osram Opto Semiconductors Gmbh Epitaxial substrate, method of making same and method of making a semiconductor chip
US8860065B2 (en) 2005-01-18 2014-10-14 Epistar Corporation Optoelectronic semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005006821B4 (en) * 2004-02-20 2010-04-29 Epistar Corp. Light emission component with organic adhesive
US8237182B2 (en) 2004-02-20 2012-08-07 Epistar Corporation Organic adhesive light-emitting device with ohmic metal bulge
US8860065B2 (en) 2005-01-18 2014-10-14 Epistar Corporation Optoelectronic semiconductor device
US7964890B2 (en) 2005-09-30 2011-06-21 Osram Opto Semiconductors Gmbh Epitaxial substrate, method of making same and method of making a semiconductor chip
US11245060B2 (en) 2007-08-27 2022-02-08 Epistar Corporation Optoelectronic semiconductor device

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