DE19922257A1 - Process for building in slits in silicon wafers comprises producing hole structures longitudinal to the slits by pore etching, and connecting the hole structures to the slits by chemical etching - Google Patents

Process for building in slits in silicon wafers comprises producing hole structures longitudinal to the slits by pore etching, and connecting the hole structures to the slits by chemical etching

Info

Publication number
DE19922257A1
DE19922257A1 DE1999122257 DE19922257A DE19922257A1 DE 19922257 A1 DE19922257 A1 DE 19922257A1 DE 1999122257 DE1999122257 DE 1999122257 DE 19922257 A DE19922257 A DE 19922257A DE 19922257 A1 DE19922257 A1 DE 19922257A1
Authority
DE
Germany
Prior art keywords
slits
etching
hole structures
pore
process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE1999122257
Other languages
German (de)
Inventor
Volker Lehmann
Silke Roennebeck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE1999122257 priority Critical patent/DE19922257A1/en
Publication of DE19922257A1 publication Critical patent/DE19922257A1/en
Application status is Ceased legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08Etching
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • H01L21/30608Anisotropic liquid etching

Abstract

Process for building in slits in silicon wafers comprises initially producing narrow neighboring hole structures longitudinal to the slits by pore etching, and subsequently connecting the hole structures to the slits by chemical etching. Preferred Features: The hole structures are produced by electrochemical pore etching. The hole structures are connected to the slits by slow chemical etching. The process uses slow alkaline etching by means of a 2% KOH etch at room temperature for 100 about hours.

Description

Die Erfindung bezieht sich auf ein Verfahren zum Einbringen von Schlitzen in Siliziumscheiben durch Ätzung. The invention relates to a method of introducing slots in silicon wafers by etching.

Das Einbringen von Schlitzen durch eine maskierte Ätzung be reitet bei der Anwendung auf Siliziumscheiben - im Gegensatz zur Ätzung einer Vielzahl anderer Materialien - erhebliche Schwierigkeiten. The introduction of slots by a masked etching be riding when applied to silicon wafers - in contrast to the etching of a variety of other materials - considerable difficulties. Durch eine maskierte alkalische Ätzung von <110<Scheiben können Schlitze in 211-Richtung erzeugt werden. By masked alkaline etching of <110 <discs slots can be generated in 211-direction. Diese Beschränkung auf die Anwendbarkeit von <110<Scheiben macht dieses Ätzverfahren natürlich nur äußerst beschränkt anwendbar. This limitation on the applicability of <110 <disks makes this etching process, of course, only very limited application.

Durch Plasmaätzen können zwar Schlitze in Siliziumscheiben beliebiger Orientierung geätzt werden, doch ist bei diesem Plasmaätzen das Aspektverhältnis auf etwa 1/30 beschränkt. Although the slots may be etched into silicon wafers any orientation by plasma etching, but the aspect ratio is limited to about 1/30 in this plasma etching. Ätztiefen in der Größenordnung der Scheibendicke erfordern extrem lange Ätzzeiten. Etching depths on the order of the slice thickness require extremely long etching times.

Der Erfindung liegt daher die Aufgabe zugrunde, ein Verfahren zum Einbringen von Schlitzen in Siliziumscheiben zu schaffen, das es ermöglicht, Schlitze beliebiger Ausrichtung und hoher Apsektverhältnisse einfach und rasch einzubringen, ohne die Gefahr einer starken konischen Aufätzung. The invention is therefore based on the object to provide a method for introducing slots into silicon wafers, which makes it possible to incorporate slits any orientation and high Apsektverhältnisse simply and quickly, without the risk of strong conical Aufätzung.

Zur Lösung dieser Aufgabe ist erfindungsgemäß vorgesehen, dass zunächst in einem ersten Arbeitsgang längs der Schlitze eng benachbarte Lochstrukturen durch eine Porenätzung erzeugt werden und dass anschließend die Lochstrukturen durch eine chemische Ätzung zu Schlitzen verbunden werden. To achieve this object, the invention provides that initially closely adjacent hole structures are produced by a pore etching in a first operation along the slots and that subsequently the hole structures are connected by a chemical etch to slits.

Dieses erfindungsgemäße zweistufige Verfahren, bei dem die Lochstrukturen bevorzugt durch eine elektrochemische Porenät zung erzeugt werden, nutzt zunächst den Vorteil der Porenät zung, die auf <100<Scheiben (Standardmaterial der Halbleiter fertigung) durchgeführt wird. This two-stage process of the invention, in which the hole structures are preferably generated by an electrochemical Porenät pollution, uses first wetting the advantage of Porenät that to <100 <discs (standard material of the semiconductor manufacturing) is performed. Durch Anwendung einer zusätzli chen chemischen Ätzung, vorzugsweise einer langsamen chemi schen Ätzung, können die Lochstrukturen zu Schlitzen verbun den werden, wobei die Art der langsamen chemischen Ätzung ausschlaggebend dafür ist, ob echte Schlitze mit im wesentli chen zur Oberfläche der Scheiben senkrechten Schlitzseiten wänden entstehen oder ob eine starke konische Aufätzung er folgt. By applying an addi tional chemical etch, preferably a slow chemi rule etching, the hole structures to slits may be the verbun, wherein the type of slow chemical etching is decisive for whether real slots in wesentli chen to the surface of the discs vertical slot sides walls are formed or whether a strong conical Aufätzung he follows.

Umfangreiche der vorliegenden Erfindung zugrundeliegende Ver suche haben dabei ergeben, dass bei Verwendung einer alkali schen Ätze beispielsweise einer 2%igen KOH-Ätze bei Raumtem peratur über ca. 100 Stunden eine chemische Nachätzung der durch die Porenätzung erzeugten Lochstrukturen erfolgt, die über die Porentiefe hinreichend isotrop ist, um eine konische Aufätzung der Schlitze zu vermeiden. Extensive of the present invention is based Ver seeking have thereby demonstrated that when using an alkaline etchant, for example a 2% KOH etch is carried out at Raumtem temperature over about 100 hours, a chemical-etching of the hole structures generated by the pore etching, the sufficiently over the pore depth is isotropic in order to avoid a conical Aufätzung of the slots. Andere Ätzen, z. Other etching, for example. B. kon zentrierte, alkalische Lösungen, HF/HNO 3 Gemische oder höhere Temperaturen führen immer zu einer nachteiligen konischen Aufätzung der Strukturen. B. kon centered, alkaline solutions, HF / HNO 3 mixtures or higher temperatures always lead to a disadvantageous conical Aufätzung of the structures.

Weitere Vorteile, Merkmale und Einzelheiten der Erfindung er geben sich aus der nachfolgenden Beschreibung zweier Ausfüh rungsbeispiele sowie anhand der Zeichnung. approximately examples Further advantages, features and details of the invention follow from the following description of two exporting and from the drawing. Dabei zeigen: They show:

Fig. 1 eine Aufsicht auf eine Siliziumscheibe mit durch Porenätzung eingebrachten Lochstrukturen, Fig. 1 is a plan view of a silicon wafer having introduced through pore etching hole structures,

Fig. 2 eine Aufsicht auf eine Siliziumscheibe nach dem Verbinden der Lochstrukturen durch eine nachfolgen de langsame chemische Ätzung, . 2 shows a plan view of a silicon wafer after the bonding of the hole structures through a follow de slow chemical etching,

Fig. 3 eine Aufsicht auf eine Scheibe mit Lochstrukturen für kreuzförmige Schlitze, und Fig. 3 is a plan view of a disk with hole structures for cross-shaped slits, and

Fig. 4 eine Aufsicht auf die Scheibe nach Fig. 3 nach der Aufätzung der Lochstrukturen. Fig. 4 is a plan view of the disc of FIG. 3 according to the Aufätzung of the hole structures.

Die Fig. 1 zeigt die Geometrie zur Herstellung der Lochstruk turen, die in einem ersten Arbeitsgang bevorzugt durch eine elektrochemische Porenätzung erzeugt werden. Fig. 1 shows the geometry of manufacturing the hollow structural temperatures, which are preferably produced in a first operation by an electrochemical pore etching. Dabei ist sowohl die Dimension der Struktur als auch die relative Orientierung in Bezug auf die kristallographischen Achsen des Siliziums angegeben. Here, both the dimension of the structure as well as the relative orientation with respect to the crystallographic axes of the silicon is given.

Die Fig. 2 zeigt die aufgeätzte Struktur, wie sie durch eine Ätzung mit 2% KOH + Propanol über 96 Stunden erzielt wurde. Fig. 2 shows the etched structure as was obtained by etching with KOH + 2% propanol over 96 hours. Die Ätzrate betrug dabei ca. 40 nm/h. The etch rate here was about 40 nm / h.

Die Fig. 3 und 4 zeigen die Geometrie zur Herstellung von kreuzförmigen Schlitzstrukturen, wie sie mit den bisherigen Ätzverfahren - mit Ausnahme des nur sehr langsamen und auch nur ein begrenztes Aspektverhältnis ermöglichenden Plasmaät zens - überhaupt nicht erzielt werden konnten. Figs. 3 and 4 show the geometry for the preparation of cross-shaped slot structures, as with the previous etching processes - could not be achieved - with the exception of very slow and only a limited aspect ratio permitting Plasmaät zen. Auch in diesem Fall sind im Makroporenraster, also der durch Porenätzung er zeugten Lochstruktur gemäß Fig. 3 und wiederum die Dimensio nen der Struktur sowie die relative Orientierung im Bezug auf die kristallographischen Achsen des Siliziums angegeben. Also in this case are in the macropore grid, ie the hole structure by pore etching he testified in FIG. 3 and in turn the NEN Dimensio the structure, and the relative orientation with respect to the crystallographic axes of the silicon specified.

Claims (5)

1. Verfahren zum Einbringen von Schlitzen in Siliziumschei ben durch Ätzung, dadurch gekenn zeichnet , dass zunächst längs der Schlitze eng be nachbarte Lochstrukturen durch eine Porenätzung erzeugt wer den und dass anschließend die Lochstrukturen durch eine che mische Ätzung zu Schlitzen verbunden werden. 1. A method for introducing slots in silicon ticket ben by etching, characterized, that at first along the slots closely neighboring hole structures be generated by a pore etching the who and that subsequently the hole structures are connected by a surface etching to mix slots.
2. Verfahren nach Anspruch 1, dadurch ge kennzeichnet, dass die Lochstrukturen durch eine elektrochemische Porenätzung erzeugt werden. 2. The method according to claim 1, characterized in that the hole structures are produced by an electrochemical pore etching.
3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass das Verbinden der Loch strukturen zu den Schlitzen durch eine langsame chemische Ät zung erfolgt. 3. The method of claim 1 or 2, characterized in that the joining of the hole structures wetting takes place to the slots by a slow chemical Ät.
4. Verfahren nach Anspruch 3, gekennzeich net durch die Verwendung einer vorzugsweise stark verdünnten alkalischen Ätze. 4. The method of claim 3, gekennzeich net through the use of a preferably highly dilute alkaline etch.
5. Verfahren nach Anspruch 4, dadurch ge kennzeichnet, dass die langsame alkalische Ät zung mittels einer 2% KOH-Ätze bei Raumtemperatur ca. 100 Stunden erfolgt. 5. The method according to claim 4, characterized in that the slow alkaline Ät wetting takes place about 100 hours by means of a 2% KOH etchant at room temperature.
DE1999122257 1999-05-14 1999-05-14 Process for building in slits in silicon wafers comprises producing hole structures longitudinal to the slits by pore etching, and connecting the hole structures to the slits by chemical etching Ceased DE19922257A1 (en)

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DE1999122257 DE19922257A1 (en) 1999-05-14 1999-05-14 Process for building in slits in silicon wafers comprises producing hole structures longitudinal to the slits by pore etching, and connecting the hole structures to the slits by chemical etching

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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007083155A1 (en) * 2006-01-23 2007-07-26 Nexeon Ltd A method of fabricating fibres composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
US8642211B2 (en) 2007-07-17 2014-02-04 Nexeon Limited Electrode including silicon-comprising fibres and electrochemical cells including the same
US8772174B2 (en) 2010-04-09 2014-07-08 Nexeon Ltd. Method of fabricating structured particles composed of silicon or silicon-based material and their use in lithium rechargeable batteries
US8870975B2 (en) 2007-07-17 2014-10-28 Nexeon Ltd. Method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
US8932759B2 (en) 2008-10-10 2015-01-13 Nexeon Ltd. Method of fabricating structured particles composed of silicon or a silicon-based material
US8945774B2 (en) 2010-06-07 2015-02-03 Nexeon Ltd. Additive for lithium ion rechageable battery cells
US8962183B2 (en) 2009-05-07 2015-02-24 Nexeon Limited Method of making silicon anode material for rechargeable cells
US9012079B2 (en) 2007-07-17 2015-04-21 Nexeon Ltd Electrode comprising structured silicon-based material
US9184438B2 (en) 2008-10-10 2015-11-10 Nexeon Ltd. Method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
US9252426B2 (en) 2007-05-11 2016-02-02 Nexeon Limited Silicon anode for a rechargeable battery
US9608272B2 (en) 2009-05-11 2017-03-28 Nexeon Limited Composition for a secondary battery cell
US9647263B2 (en) 2010-09-03 2017-05-09 Nexeon Limited Electroactive material
US9853292B2 (en) 2009-05-11 2017-12-26 Nexeon Limited Electrode composition for a secondary battery cell
US9871248B2 (en) 2010-09-03 2018-01-16 Nexeon Limited Porous electroactive material

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DE1216649B (en) * 1961-03-30 1966-05-12 Philips Nv A process for producing a plate with perforations or cavities by etching trichterfoermigen
DE3526951A1 (en) * 1985-07-27 1987-01-29 Battelle Institut E V Shearing blade for razors and method for the production thereof

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
DE1112368B (en) * 1957-11-07 1961-08-03 Philips Nv A method of manufacturing a perforated cutting plate for a Trockenrasiergeraet by etching
DE1216649B (en) * 1961-03-30 1966-05-12 Philips Nv A process for producing a plate with perforations or cavities by etching trichterfoermigen
DE3526951A1 (en) * 1985-07-27 1987-01-29 Battelle Institut E V Shearing blade for razors and method for the production thereof

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2472653A3 (en) * 2006-01-23 2014-11-26 Nexeon Limited Electrode structure comprising intersecting silicon-containing fibres for lithium rechargeable batteries
US8597831B2 (en) 2006-01-23 2013-12-03 Nexeon Ltd. Method of fabricating fibres composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
US9583762B2 (en) 2006-01-23 2017-02-28 Nexeon Limited Method of fabricating fibres composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
WO2007083155A1 (en) * 2006-01-23 2007-07-26 Nexeon Ltd A method of fabricating fibres composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
US9871249B2 (en) 2007-05-11 2018-01-16 Nexeon Limited Silicon anode for a rechargeable battery
US9252426B2 (en) 2007-05-11 2016-02-02 Nexeon Limited Silicon anode for a rechargeable battery
US8870975B2 (en) 2007-07-17 2014-10-28 Nexeon Ltd. Method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
US8940437B2 (en) 2007-07-17 2015-01-27 Nexeon Limited Method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
US9871244B2 (en) 2007-07-17 2018-01-16 Nexeon Limited Method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
US9012079B2 (en) 2007-07-17 2015-04-21 Nexeon Ltd Electrode comprising structured silicon-based material
US8642211B2 (en) 2007-07-17 2014-02-04 Nexeon Limited Electrode including silicon-comprising fibres and electrochemical cells including the same
US8932759B2 (en) 2008-10-10 2015-01-13 Nexeon Ltd. Method of fabricating structured particles composed of silicon or a silicon-based material
US9184438B2 (en) 2008-10-10 2015-11-10 Nexeon Ltd. Method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
US9553304B2 (en) 2009-05-07 2017-01-24 Nexeon Limited Method of making silicon anode material for rechargeable cells
US8962183B2 (en) 2009-05-07 2015-02-24 Nexeon Limited Method of making silicon anode material for rechargeable cells
US9853292B2 (en) 2009-05-11 2017-12-26 Nexeon Limited Electrode composition for a secondary battery cell
US9608272B2 (en) 2009-05-11 2017-03-28 Nexeon Limited Composition for a secondary battery cell
US10050275B2 (en) 2009-05-11 2018-08-14 Nexeon Limited Binder for lithium ion rechargeable battery cells
US8772174B2 (en) 2010-04-09 2014-07-08 Nexeon Ltd. Method of fabricating structured particles composed of silicon or silicon-based material and their use in lithium rechargeable batteries
US9368836B2 (en) 2010-06-07 2016-06-14 Nexeon Ltd. Additive for lithium ion rechargeable battery cells
US8945774B2 (en) 2010-06-07 2015-02-03 Nexeon Ltd. Additive for lithium ion rechageable battery cells
US9647263B2 (en) 2010-09-03 2017-05-09 Nexeon Limited Electroactive material
US9871248B2 (en) 2010-09-03 2018-01-16 Nexeon Limited Porous electroactive material
US9947920B2 (en) 2010-09-03 2018-04-17 Nexeon Limited Electroactive material

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